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    • 7. 发明授权
    • Flexible self-expandable stent and method of producing the same
    • 柔性自扩张支架及其制造方法
    • US07041126B2
    • 2006-05-09
    • US10653695
    • 2003-09-02
    • Kyong-Min ShinJeong-Hee NamJin-Hong Kim
    • Kyong-Min ShinJeong-Hee NamJin-Hong Kim
    • A61F2/06
    • A61F2/90A61F2/07A61F2002/075
    • A flexible self-expandable stent has inside and outside stent bodies each fabricated by knitting first and second super-elastic shape memory alloy wires into a net-like structure with the first wire zigzagged with a diagonal length P interlocked with the second wire zigzagged with a diagonal length 2P at a plurality of interlocked points with intersecting points therebetween to allow the stent bodies to apply force against longitudinal contraction of the stent bodies. The interlocked points and the intersecting points form a plurality of diamond-shaped meshes in the net-like structure of each stent body. A hollow rubber tube is closely fitted between the inside and outside stent bodies, with each of the overlapped ends of the rubber tube and the stent bodies being integrating into a single structure.
    • 柔性自扩张支架具有内侧和外侧的支架体,每个支架主体均通过将第一和第二超弹性形状记忆合金线编织为网状结构而制成,其中第一丝线以与第一丝线互锁的对角线长度P互锁, 在多个互锁点处的对角线长度2P,其间具有相交点,以允许支架体对支架体的纵向收缩施加力。 互锁点和相交点在每个支架主体的网状结构中形成多个菱形网。 中空橡胶管紧密地配合在内侧和外部支架体之间,橡胶管和支架体的每一个重叠的一端被集成为单个结构。
    • 10. 发明授权
    • Method of making a poly-silicon thin film transistor having lightly
doped drain structure
    • 制造具有轻掺杂漏极结构的多晶硅薄膜晶体管的方法
    • US5677206A
    • 1997-10-14
    • US605515
    • 1996-02-26
    • Joo-Hyung LeeSuk-Bum MahJin-Hong Kim
    • Joo-Hyung LeeSuk-Bum MahJin-Hong Kim
    • G02F1/136H01L21/336H01L29/786H01L21/84
    • H01L29/66757H01L29/78621
    • A poly-silicon thin film transistor having LDD structure which has very low source/drain resistance is described. A TFT according to a preferred embodiment of the present invention, has, on a substrate, an active poly-silicon layer with a heavily-doped region on an outer peripheral thereof, a lightly doped region on ban inside the outer peripheral band and an un-doped region on a center part thereof. A gate insulating layer is comprised of a lower oxide layer, a nitride layer and an upper oxide layer. The lower oxide layer is formed over the whole active poly-silicon layer, but the nitride layer and the upper oxide layer are formed only on the un-doped portions of the active poly-silicon layer. A gate electrode is then formed on the upper oxide layer. A method for forming this structure is also described, which method uses a dry etch to remove the upper oxide layer and the nitride layer, but not the lower oxide layer prior to ion implantation of the active region.
    • 描述了具有非常低的源极/漏极电阻的LDD结构的多晶硅薄膜晶体管。 根据本发明的优选实施例的TFT在衬底上具有在其外周上具有重掺杂区域的活性多晶硅层,在外周带上禁止的轻掺杂区域和un 在其中心部分的掺杂区域。 栅极绝缘层由低氧化物层,氮化物层和上部氧化物层组成。 在整个活性多晶硅层上形成低氧化物层,但仅在活性多晶硅层的未掺杂部分上形成氮化物层和上部氧化物层。 然后在上部氧化物层上形成栅电极。 还描述了用于形成该结构的方法,该方法使用干蚀刻在有源区的离子注入之前去除上氧化物层和氮化物层而不是下氧化物层。