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1. 发明授权

US5053909A Semiconductor integrated circuit device 失效
标题翻译：半导体集成电路设备
公开(公告)号：US5053909A
公开(公告)日：1991-10-01
申请号：US346409
申请日：1989-05-02
申请人： Yasunaga Suzuki , Toshiaki Matsubara , Akira Uragami
发明人： Yasunaga Suzuki , Toshiaki Matsubara , Akira Uragami
IPC分类号： H01L27/06 , H01L21/82 , H01L21/8249 , H01L27/02 , H01L27/118 , H03K19/003 , H03K19/177
CPC分类号： H03K19/17764 , H01L21/82 , H01L27/0251 , H01L27/11898 , H03K19/003 , H03K19/17744 , H03K19/1778
摘要： Disclosed is a semiconductor integrated circuit device equipped with a buffer portion which includes a pair of an input buffer portion and an output buffer portion. When an input circuit equipped with an input protection circuit is formed at the input buffer portion, circuit elements for an output circuit disposed at the output buffer portion are used in order to constitute the input protection circuit.

2. 发明授权

US06670844B2 Charge pump circuit 失效
标题翻译：电荷泵电路
公开(公告)号：US06670844B2
公开(公告)日：2003-12-30
申请号：US10237714
申请日：2002-09-04
申请人： Fumikazu Kobayashi , Shuuji Sakamoto , Toshiaki Matsubara
发明人： Fumikazu Kobayashi , Shuuji Sakamoto , Toshiaki Matsubara
IPC分类号： G05F156
CPC分类号： H02M3/073
摘要： A highly efficient charge pump circuit featuring easy circuit design and formation as well as high reliability includes transistors M1-M4 individually having a diode connection configuration and interconnected in cascade, and is adapted to alternately apply a clock signal and an inverted clock signal to the transistors via capacitor elements C1-C4. The charge pump employs a depression-type transistor as the transistors M1-M4 and has an arrangement wherein the transistors M1, M2 on an input side have a greater gate length than the succeeding transistors M3, M4 for increasing the efficiency of boosting voltage. The charge pump circuit includes a single type of device so as to facilitate the circuit design and formation and also to enhance the reliability thereof.
摘要翻译：具有容易的电路设计和形成以及高可靠性的高效电荷泵电路包括单独具有二极管连接配置并串联互连的晶体管M1-M4，并且适于交替地将时钟信号和反相时钟信号施加到晶体管通过电容器元件C1-C4。电荷泵采用凹陷型晶体管作为晶体管M1-M4，并且具有这样的结构，其中输入侧的晶体管M1，M2具有比后续晶体管M3，M4更大的栅极长度，以提高升压电压的效率。电荷泵电路包括单一类型的装置，以便于电路设计和形成，并且还提高其可靠性。

3. 发明授权

US4689503A Level conversion circuitry for a semiconductor integrated circuit utilizing bis CMOS circuit elements 失效
标题翻译：利用双CMOS电路元件的半导体集成电路的电平转换电路
公开(公告)号：US4689503A
公开(公告)日：1987-08-25
申请号：US575567
申请日：1984-01-31
申请人： Yukio Suzuki , Ikuro Masuda , Masahiro Iwamura , Shinji Kadono , Akira Uragami , Masayoshi Yoshimura , Toshiaki Matsubara
发明人： Yukio Suzuki , Ikuro Masuda , Masahiro Iwamura , Shinji Kadono , Akira Uragami , Masayoshi Yoshimura , Toshiaki Matsubara
IPC分类号： H03K19/00 , H03K19/0175 , H03K19/018 , H03K19/094 , H03K19/0944 , H03K19/177 , H03K19/01 , H03K19/013 , H03K19/017
CPC分类号： H03K19/09448 , H03K19/017518 , H03K19/01806 , H03K19/09425 , H03K19/09429 , H01L2924/0002
摘要： In an input level converter for TTL-CMOS level conversion (or other conversion to CMOS) for an internal logic block operating with CMOS levels, an output transistor for executing the charge or discharge of the output capacitance thereof is formed of a bipolar transistor. Thus, the propagation delay times and their capacitance-dependencies of the input level converter can be lessened. Similarly, in an output level converter for CMOS-TTL level conversion (or other conversion from CMOS) for the internal logic block operating with the CMOS levels, an output transistor for executing the charge or discharge of the output load capacitance thereof is formed of a bipolar transistor. Thus, the propagation delay times and their capacitance-dependencies of the output level converter can also be lessened.
摘要翻译：在用于CMOS电平工作的内部逻辑块的TTL-CMOS电平转换（或其他转换为CMOS）的输入电平转换器中，用于执行其输出电容的充电或放电的输出晶体管由双极晶体管形成。因此，可以减小输入电平转换器的传播延迟时间及其电容依赖性。类似地，在用于CMOS电平操作的内部逻辑块的用于CMOS-TTL电平转换（或来自CMOS的其它转换）的输出电平转换器中，用于执行其输出负载电容的充电或放电的输出晶体管由双极晶体管。因此，也可以减小输出电平转换器的传播延迟时间及其电容依赖性。

4. 发明授权

US4983862A Semiconductor integrated circuit with a bi-MOS input circuit for providing input signals to an internal logic block 失效
标题翻译：具有用于向内部逻辑块提供输入信号的双MOS输入电路的半导体集成电路
公开(公告)号：US4983862A
公开(公告)日：1991-01-08
申请号：US429489
申请日：1989-10-31
申请人： Yukio Suzuki , Ikuro Masuda , Masahiro Iwamura , Shinji Kadono , Akira Uragami , Masayoshi Yoshimura , Toshiaki Matsubara
发明人： Yukio Suzuki , Ikuro Masuda , Masahiro Iwamura , Shinji Kadono , Akira Uragami , Masayoshi Yoshimura , Toshiaki Matsubara
IPC分类号： H03K19/00 , H03K19/0175 , H03K19/018 , H03K19/094 , H03K19/0944 , H03K19/177
CPC分类号： H03K19/09448 , H03K19/017518 , H03K19/01806 , H03K19/09425 , H03K19/09429 , H01L2924/0002
摘要： In an input level converter for TTL - CMOS level conversion (or other conversion to CMOS) for an internal logic block operating with CMOS levels, an output transistor for executing the charge or discharge of the output capacitance thereof is formed of a bipolar transistor. Thus, the propagation delay times and their capacitance-dependencies of the input level converter can be lessened. Similarly, in an output level converter for CMOS - TTL level conversion (or other conversion from CMOS) for the internal logic block operating with the CMOS levels, an output transistor for executing the charge or discharge of the output load capacitance thereof is formed of a bipolar transistor. Thus, the propagation delay times and their capacitance-dependencies of the output level converter can also be lessened.

5. 发明授权

US4879480A Bicmos gate array 失效
标题翻译：二门门阵列
公开(公告)号：US4879480A
公开(公告)日：1989-11-07
申请号：US240450
申请日：1988-09-02
申请人： Yukio Suzuki , Ikuro Masuda , Masahiro Iwamura , Shinji Kadono , Akiro Uragami , Masayoshi Yoshimura , Toshiaki Matsubara
发明人： Yukio Suzuki , Ikuro Masuda , Masahiro Iwamura , Shinji Kadono , Akiro Uragami , Masayoshi Yoshimura , Toshiaki Matsubara
IPC分类号： H03K19/00 , H03K19/0175 , H03K19/018 , H03K19/094 , H03K19/0944 , H03K19/177
CPC分类号： H03K19/09448 , H03K19/017518 , H03K19/01806 , H03K19/09425 , H03K19/09429 , H01L2924/0002
摘要： In an input level converter for TTL - CMOS level conversion (or other conversion to CMOS) for an internal logic block operating with CMOS levels, an output transistor for executing the charge or discharge of the output capacitance thereof is formed of a bipolar transistor. Thus, the propagation delay times and their capacitance-dependencies of the input level converter can be lessened. Similarly, in an output level converter for CMOS - TTL level conversion (or other conversion from CMOS) for the internal logic block operating with the CMOS levels, an output transistor for executing the charge or discharge of the output load capacitance thereof is formed of a bipolar transistor. Thus, the propagation delay times and their capacitance-dependencies of the output level converter can also be lessened.
摘要翻译：在用于CMOS电平工作的内部逻辑块的TTL-CMOS电平转换（或其他转换为CMOS）的输入电平转换器中，用于执行其输出电容的充电或放电的输出晶体管由双极晶体管形成。因此，可以减小输入电平转换器的传播延迟时间及其电容依赖性。类似地，在用于CMOS电平操作的内部逻辑块的用于CMOS-TTL电平转换（或来自CMOS的其它转换）的输出电平转换器中，用于执行其输出负载电容的充电或放电的输出晶体管由双极晶体管。因此，也可以减小输出电平转换器的传播延迟时间及其电容依赖性。

6. 发明授权

US5495183A Level conversion circuitry for a semiconductor integrated circuit 失效
标题翻译：半导体集成电路的电平转换电路
公开(公告)号：US5495183A
公开(公告)日：1996-02-27
申请号：US440335
申请日：1995-05-12
申请人： Yukio Suzuki , Ikuro Masuda , Masahiro Iwamura , Shinji Kadono , Akira Urragami , Masayoshi Yoshimura , Toshiaki Matsubara
发明人： Yukio Suzuki , Ikuro Masuda , Masahiro Iwamura , Shinji Kadono , Akira Urragami , Masayoshi Yoshimura , Toshiaki Matsubara
IPC分类号： H03K19/0175 , H03K19/018 , H03K19/094 , H03K19/0944 , H03K19/177
CPC分类号： H03K19/1778 , H03K19/017518 , H03K19/01806 , H03K19/09429 , H03K19/09448 , H03K19/17784 , H03K19/17792
摘要： In an input level converter for TTL--CMOS level conversion (or other conversion to CMOS) for an internal logic block operating with CMOS levels, an output transistor for executing the charge or discharge of the output capacitance thereof is formed of a bipolar transistor. Thus, the propagation delay times and their capacitance-dependencies of the input level converter can be lessened. Similarly, in an output level converter for CMOS--TTL level conversion (or other conversion from CMOS) for the internal logic block operating with the CMOS levels, an output transistor for executing the charge or discharge of the output load capacitance thereof is formed of a bipolar transistor. Thus, the propagation delay times and their capacitance-dependencies of the output level converter can also be lessened.
摘要翻译：在用于CMOS电平工作的内部逻辑块的TTL-CMOS电平转换（或其他转换为CMOS）的输入电平转换器中，用于执行其输出电容的充电或放电的输出晶体管由双极晶体管形成。因此，可以减小输入电平转换器的传播延迟时间及其电容依赖性。类似地，在用于CMOS电平操作的内部逻辑块的用于CMOS-TTL电平转换（或来自CMOS的其它转换）的输出电平转换器中，用于执行其输出负载电容的充电或放电的输出晶体管由双极晶体管。因此，也可以减小输出电平转换器的传播延迟时间及其电容依赖性。

7. 发明授权

US5245224A Level conversion circuitry for a semiconductor integrated circuit 失效
标题翻译：半导体集成电路的电平转换电路
公开(公告)号：US5245224A
公开(公告)日：1993-09-14
申请号：US845136
申请日：1992-03-03
申请人： Yukio Suzuki , Ikuro Masuda , Masahiro Iwamura , Shinji Kadono , Akira Uragami , Masayoshi Yoshimura , Toshiaki Matsubara
发明人： Yukio Suzuki , Ikuro Masuda , Masahiro Iwamura , Shinji Kadono , Akira Uragami , Masayoshi Yoshimura , Toshiaki Matsubara
IPC分类号： H03K19/0175 , H03K19/018 , H03K19/094 , H03K19/0944 , H03K19/177
CPC分类号： H03K19/09448 , H03K19/017518 , H03K19/01806 , H03K19/09429
摘要： In an input level converter for TTL-CMOS level conversion (or other conversion to CMOS) for an internal logic block operating with CMOS levels, an output transistor for executing the charge or discharge of the output capacitance thereof is formed of a bipolar transistor. Thus, the propagation delay times and their capacitance-dependencies of the input level converter can be lessened. Similarly, in an output level converter for CMOS-TTL level conversion (or other conversion from CMOS) for the internal logic block operating with the CMOS levels, an output transistor for executing the charge or discharge of the output load capacitance thereof is formed of a bipolar transistor. Thus, the propagation delay times and their capacitance-dependencies of the output level converter can also be lessened.
摘要翻译：在用于CMOS电平工作的内部逻辑块的TTL-CMOS电平转换（或其他转换为CMOS）的输入电平转换器中，用于执行其输出电容的充电或放电的输出晶体管由双极晶体管形成。因此，可以减小输入电平转换器的传播延迟时间及其电容依赖性。类似地，在用于CMOS电平操作的内部逻辑块的用于CMOS-TTL电平转换（或来自CMOS的其它转换）的输出电平转换器中，用于执行其输出负载电容的充电或放电的输出晶体管由双极晶体管。因此，也可以减小输出电平转换器的传播延迟时间及其电容依赖性。

8. 发明授权

US5103120A Level conversion circuitry for a semiconductor integrated circuit 失效
标题翻译：半导体集成电路的电平转换电路
公开(公告)号：US5103120A
公开(公告)日：1992-04-07
申请号：US636892
申请日：1991-01-02
申请人： Yukio Suzuki , Ikuro Masuda , Masahiro Iwamura , Shinji Kadono , Akira Uragami , Masayoshi Yoshimura , Toshiaki Matsubara
发明人： Yukio Suzuki , Ikuro Masuda , Masahiro Iwamura , Shinji Kadono , Akira Uragami , Masayoshi Yoshimura , Toshiaki Matsubara
IPC分类号： H03K19/00 , H03K19/0175 , H03K19/018 , H03K19/094 , H03K19/0944 , H03K19/177
CPC分类号： H03K19/09448 , H03K19/017518 , H03K19/01806 , H03K19/09425 , H03K19/09429 , H01L2924/0002
摘要： In an input level converter for TTL - CMOS level conversion (or other conversion to CMOS) for an internal logic block operating with CMOS levels, an output transistor for executing the charge or discharge of the output capacitance thereof is formed of a bipolar transistor. Thus, the propagation delay times and their capacitance-dependencies of the input level converter can be lessened. Similarly, in an output level converter for CMOS - TTL level conversion (or other conversion from CMOS) for the internal logic block operating with the CMOS levels, an output transistor for executing the charge or discharge of the output load capacitance thereof is formed of a bipolar transistor. Thus, the propagation delay times and their capacitance-dependencies of the output level converter can also be lessened.
摘要翻译：在用于CMOS电平工作的内部逻辑块的TTL-CMOS电平转换（或其他转换为CMOS）的输入电平转换器中，用于执行其输出电容的充电或放电的输出晶体管由双极晶体管形成。因此，可以减小输入电平转换器的传播延迟时间及其电容依赖性。类似地，在用于CMOS电平操作的内部逻辑块的CMOS-TTL电平转换（或来自CMOS的其它转换）的输出电平转换器中，用于执行其输出负载电容的充电或放电的输出晶体管由双极晶体管。因此，也可以减小输出电平转换器的传播延迟时间及其电容依赖性。

9. 发明授权

US5512847A BiCMOS tri-state output driver 失效
标题翻译： BiCMOS三态输出驱动器
公开(公告)号：US5512847A
公开(公告)日：1996-04-30
申请号：US321012
申请日：1994-10-06
申请人： Yukio Suzuki , Ikuro Masuda , Masahiro Iwamura , Shinji Kadono , Akira Uragami , Masayoshi Yoshimura , Toshiaki Matsubara
发明人： Yukio Suzuki , Ikuro Masuda , Masahiro Iwamura , Shinji Kadono , Akira Uragami , Masayoshi Yoshimura , Toshiaki Matsubara
IPC分类号： H03K19/00 , H03K19/0175 , H03K19/018 , H03K19/094 , H03K19/0944 , H03K19/177 , H03K19/01
CPC分类号： H03K19/09448 , H03K19/017518 , H03K19/01806 , H03K19/09425 , H03K19/09429 , H01L2924/0002
摘要： In an input level converter for TTL--CMOS level conversion (or other conversion to CMOS) for an internal logic block operating with CMOS levels, an output transistor for executing the charge or discharge of the output capacitance thereof is formed of a bipolar transistor. Thus, the propagation delay times and their capacitance-dependencies of the input level converter can be lessened. Similarly, in an output level converter for CMOS--TTL level conversion (or other conversion from CMOS) for the internal logic block operating with the CMOS levels, an output transistor for executing the charge or discharge of the output load capacitance thereof is formed of a bipolar transistor. Thus, the propagation delay times and their capacitance-dependencies of the output level converter can also be lessened.
摘要翻译：在用于CMOS电平工作的内部逻辑块的TTL-CMOS电平转换（或其他转换为CMOS）的输入电平转换器中，用于执行其输出电容的充电或放电的输出晶体管由双极晶体管形成。因此，可以减小输入电平转换器的传播延迟时间及其电容依赖性。类似地，在用于CMOS电平操作的内部逻辑块的用于CMOS-TTL电平转换（或来自CMOS的其它转换）的输出电平转换器中，用于执行其输出负载电容的充电或放电的输出晶体管由双极晶体管。因此，也可以减小输出电平转换器的传播延迟时间及其电容依赖性。

10. 发明授权

US5001487A Semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件
公开(公告)号：US5001487A
公开(公告)日：1991-03-19
申请号：US544063
申请日：1990-06-26
申请人： Yasunaga Suzuki , Toshiaki Matsubara , Haruo Mamyoda , Akira Uragami
发明人： Yasunaga Suzuki , Toshiaki Matsubara , Haruo Mamyoda , Akira Uragami
IPC分类号： H01L27/118
CPC分类号： H01L27/11896
摘要： A semiconductor integrated circuit device is disclosed. The circuit device uses modified (m+n) input cells, each equipped with high load driving functional elements disposed at the periphery of the cell, and having n signal input terminal(s) in addition to m normal signal input terminals that are incorporated in the cell.
摘要翻译：公开了一种半导体集成电路器件。电路装置使用修改的（m + n）个输入单元，每个单元配备有设置在单元周边的高负载驱动功能元件，并且除了并入到m个正常信号输入端之外还具有n个信号输入端细胞。

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