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1. 发明申请

WO2013052263A3 ANTIFUNGAL COMPOUNDS 审中-公开
标题翻译：抗真菌化合物
公开(公告)号：WO2013052263A3
公开(公告)日：2013-06-20
申请号：PCT/US2012055683
申请日：2012-09-16
申请人： MICROBIOTIX INC , NGUYEN SON T , DING XIAOYUAN , WILLIAMS JOHN D , OPPERMAN TIMOTHY J
发明人： NGUYEN SON T , DING XIAOYUAN , WILLIAMS JOHN D , OPPERMAN TIMOTHY J
IPC分类号： A61K31/4178
CPC分类号： A01N43/90 , A01N43/38 , A01N43/40 , A01N43/50 , A01N43/54
摘要： The invention provides fungicide and/or antifungal organic compounds and compositions thereof that kill or inhibit growth of cells of one or more microbial pathogens, such as pathogenic fungi species (including opportunistic pathogenic species) by administration to an individual (human or other mammal), plant, or foodstuff that is susceptible to infection by or has been infected with cells of the fungal species.
摘要翻译：本发明提供杀真菌剂和/或抗真菌有机化合物及其组合物，其通过给予个体（人或其他哺乳动物）杀死或抑制一种或多种微生物病原体（例如致病真菌物种（包括机会致病物种））细胞的生长，植物或食物，其易感染或已被真菌物种的细胞感染。

2. 发明申请

WO2013052263A2 ANTIFUNGAL COMPOUNDS 审中-公开
标题翻译：抗真菌化合物
公开(公告)号：WO2013052263A2
公开(公告)日：2013-04-11
申请号：PCT/US2012/055683
申请日：2012-09-16
申请人： MICROBIOTIX, INC. , NGUYEN, Son, T. , DING, Xiaoyuan , WILLIAMS, John, D. , OPPERMAN, Timothy, J.
发明人： NGUYEN, Son, T. , DING, Xiaoyuan , WILLIAMS, John, D. , OPPERMAN, Timothy, J.
IPC分类号： A01N43/90
CPC分类号： A01N43/90 , A01N43/38 , A01N43/40 , A01N43/50 , A01N43/54
摘要： The invention provides fungicide and/or antifungal organic compounds and compositions thereof that kill or inhibit growth of cells of one or more microbial pathogens.
摘要翻译：本发明提供了杀死或抑制一种或多种微生物病原体细胞生长的杀真菌剂和/或抗真菌有机化合物及其组合物。

3. 发明申请

WO2010118295A3 HVPE PRECURSOR SOURCE HARDWARE 审中-公开
标题翻译： HVPE前驱源硬件
公开(公告)号：WO2010118295A3
公开(公告)日：2011-01-20
申请号：PCT/US2010030496
申请日：2010-04-09
申请人： APPLIED MATERIALS INC , ISHIKAWA TETSUYA , QUACH DAVID H , CHANG ANZHONG , KRYLIOUK OLGA , MELNIK YURIY , RATIA HARSUKHDEEP S , NGUYEN SON T , PANG LILY
发明人： ISHIKAWA TETSUYA , QUACH DAVID H , CHANG ANZHONG , KRYLIOUK OLGA , MELNIK YURIY , RATIA HARSUKHDEEP S , NGUYEN SON T , PANG LILY
IPC分类号： H01L21/20
CPC分类号： C30B29/403 , C23C16/34 , C23C16/4401 , C23C16/45565 , C23C16/46 , C30B25/02 , C30B29/406 , Y10T137/479 , Y10T137/4807 , Y10T137/4824 , Y10T137/7504 , Y10T137/8376
摘要： Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.
摘要翻译：本文公开的实施例通常涉及HVPE室。腔室可以具有耦合到其上的两个分离的前体源，以允许沉积两个分开的层。例如，镓源和单独的铝源可以耦合到处理室以允许氮化镓和氮化铝分别沉积在相同处理室中的衬底上。氮可以在与镓和铝分开的位置和在较低温度下被引入处理室。不同的温度导致气体混合在一起，反应并沉积在基板上，而在室壁上很少或没有沉积。

4. 发明申请

WO2010036999A3 SUBSTRATE PROCESSING CHAMBER WITH OFF-CENTER GAS DELIVERY FUNNEL 审中-公开
标题翻译：带中心气体输送机的基板加工室
公开(公告)号：WO2010036999A3
公开(公告)日：2010-08-12
申请号：PCT/US2009058557
申请日：2009-09-28
申请人： APPLIED MATERIALS INC , MERRY NIR , NGUYEN SON T
发明人： MERRY NIR , NGUYEN SON T
IPC分类号： H01L21/205 , H01L21/00
CPC分类号： C23C16/45544 , C23C16/45502 , C23C16/45563
摘要： Methods and apparatus for processing substrates are disclosed herein. The process chamber includes a chamber body, a substrate support pedestal, a pump port and a gas injection funnel. The chamber body has an inner volume and the substrate support pedestal is disposed in the inner volume of the chamber body. The pump port is coupled to the inner volume and is disposed off-center from a central axis of the substrate support pedestal. The pump port provides azimuthally non-uniform pumping proximate to a surface of the substrate support pedestal and creates localized regions of high pressure and low pressure within the inner volume during use. The gas injection funnel is disposed in a ceiling of the chamber body and opposite the substrate support pedestal. The gas injection funnel is offset from the central axis of the substrate support pedestal and is disposed in a region of low pressure.
摘要翻译：本文公开了处理衬底的方法和设备。处理室包括室主体，基板支撑基座，泵口和气体注入漏斗。腔体具有内部体积，并且衬底支撑基座设置在腔体的内部体积中。泵口连接到内部体积并且设置在离基板支撑基座的中心轴线偏心的位置。泵端口提供靠近基板支撑基座的表面的方位不均匀的泵送，并且在使用期间在内部体积内产生高压和低压的局部区域。气体注入漏斗设置在室主体的顶部并与衬底支撑基座相对。气体注入漏斗偏离衬底支撑基座的中心轴线并且设置在低压区域中。

5. 发明申请

WO2010025366A3 METHOD FOR FORMING ALLYLIC ALCOHOLS 审中-公开
公开(公告)号：WO2010025366A3
公开(公告)日：2010-03-04
申请号：PCT/US2009/055363
申请日：2009-08-28
申请人： THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS , DENMARK, Scott E. , MILICEVIC, Selena , NGUYEN, Son T.
发明人： DENMARK, Scott E. , MILICEVIC, Selena , NGUYEN, Son T.
IPC分类号： C07C29/14 , C07C33/20 , C07C215/30 , C07D307/36 , B01J31/28
摘要： A method of performing a chemical reaction includes reacting an allyl donor and a substrate in a reaction mixture, and forming a homoallylic alcohol in the reaction mixture. The substrate may be an aldehyde or a hemiacetal. The reaction mixture includes a ruthenium catalyst, carbon monoxide at a level of at least 1 equivalent relative to the substrate, and water at a level of at least 1 equivalent relative to the substrate, and an amine at a level of from 0 to 0.5 equivalent relative to the substrate. The reaction mixture may also include a halide, and the equivalents of the amine may be similar to those of the halide. The reacting includes maintaining the reaction mixture at a temperature of at least 40°C. The method may be catalytic in metal, environmentally benign, amenable to large-scale applications, and applicable to a wide range of substrates.

6. 发明申请

WO2004094702A8 MULTI-CHEMISTRY PLATING SYSTEM 审中-公开
标题翻译：多化学镀层系统
公开(公告)号：WO2004094702A8
公开(公告)日：2005-12-29
申请号：PCT/US2004012012
申请日：2004-04-16
申请人： APPLIED MATERIALS INC , YANG MICHAEL X , XI MING , BRITCHER ERIC B , DONOSO BERNARDO , PANG LILY L , SHERMAN SVETLANA , HO HENRY , NGUYEN ANH N , LERNER ALEXANDER N , D AMBRA ALLEN L , SHANMUGASUNDRAM ARULKUMAR , ISHIKAWA TETSUYA , RABINOVICH YEVGENIY , LUBOMIRSKY DMITRY , MOK YEUK-FAI EDWIN , NGUYEN SON T
发明人： YANG MICHAEL X , XI MING , ELLWANGER RUSSELL C , BRITCHER ERIC B , DONOSO BERNARDO , PANG LILY L , SHERMAN SVETLANA , HO HENRY , NGUYEN ANH N , LERNER ALEXANDER N , D AMBRA ALLEN L , SHANMUGASUNDRAM ARULKUMAR , ISHIKAWA TETSUYA , RABINOVICH YEVGENIY , LUBOMIRSKY DMITRY , MOK YEUK-FAI EDWIN , NGUYEN SON T
IPC分类号： B08B3/02 , C25D5/00 , C25D7/12 , C25D17/00 , C25D21/00 , C25D21/08 , H01L21/00 , H01L21/68 , H01L21/683 , H01L21/687 , C25D
CPC分类号： H01L21/67167 , B08B3/02 , C25D5/003 , C25D7/123 , C25D17/001 , C25D17/002 , C25D21/02 , C25D21/08 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/67109 , H01L21/6719 , H01L21/67196 , H01L21/6723 , H01L21/68 , H01L21/6838 , H01L21/68707
摘要： Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.
摘要翻译：本发明的实施方案通常提供电化学电镀系统。所述电镀系统包括基板装载站，所述基板装载站定位成与主机处理平台连通，至少一个位于所述主机上的基板电镀单元，位于所述主机上的至少一个基板斜面清洁单元，以及与主机和加载站中的至少一个，层叠基板退火站中的每个室具有加热板，冷却板和基板传送机器人。

7. 发明申请

WO2005036615A3 APPARATUS TO IMPROVE WAFER TEMPERATURE UNIFORMITY FOR FACE-UP WET PROCESSING 审中-公开
公开(公告)号：WO2005036615A3
公开(公告)日：2005-04-21
申请号：PCT/US2004/032879
申请日：2004-10-05
申请人： APPLIED MATERIALS, INC. , PANCHAM , Ian, A. , NGUYEN, Son, T. , ROSEN, Gary, J.
发明人： PANCHAM , Ian, A. , NGUYEN, Son, T. , ROSEN, Gary, J.
IPC分类号： H01L21/00
摘要： A method and apparatus for controlling a substrate temperature during an electroless deposition process. The apparatus includes a deposition cell configured to support a substrate at a position above a fluid distribution member. A heated fluid is dispensed from the fluid diffusion member and contacts the backside of the substrate, thus heating the substrate. The heated fluid is dispensed from apertures configured to maintain a constant temperature across the substrate surface. The method includes flowing a heated fluid through a diffusion member against a backside of the substrate in a configuration that is configured to generate a constant processing temperature across the front side of the substrate.

8. 发明申请

WO2013040528A1 ANTIMICROBIAL COMPOUNDS 审中-公开
标题翻译：抗微生物化合物
公开(公告)号：WO2013040528A1
公开(公告)日：2013-03-21
申请号：PCT/US2012/055679
申请日：2012-09-16
申请人： MICROBIOTIX, INC. , NGUYEN, Son, T. , DING, Xiaoyuan , WILLIAMS, John, D. , BUTLER, Michelle, M.
发明人： NGUYEN, Son, T. , DING, Xiaoyuan , WILLIAMS, John, D. , BUTLER, Michelle, M.
IPC分类号： A01N43/38 , A61K31/40 , C07D487/02
CPC分类号： A61K31/4178 , A61K31/437 , A61K31/506 , A61K45/06 , C07D471/04 , Y02A50/409 , Y02A50/411 , A61K2300/00
摘要： The invention provides antimicrobial organic compounds and compositions thereof that kill or inhibit growth of cells of one or more microbial pathogens.
摘要翻译：本发明提供了杀死或抑制一种或多种微生物病原体细胞生长的抗微生物有机化合物及其组合物。

9. 发明申请

WO2010123877A2 CVD APPARATUS FOR IMPROVED FILM THICKNESS NON-UNIFORMITY AND PARTICLE PERFORMANCE 审中-公开
标题翻译：改善薄膜厚度的CVD装置非均匀性和颗粒性能
公开(公告)号：WO2010123877A2
公开(公告)日：2010-10-28
申请号：PCT/US2010/031723
申请日：2010-04-20
申请人： APPLIED MATERIALS, INC. , TRAN, Binh , CUI, Anqing , HWANG, Bernard, L. , NGUYEN, Son, T. , NGUYEN, Anh, N. , SEUTTER, Sean, M. , TAO, Xianzhi
发明人： TRAN, Binh , CUI, Anqing , HWANG, Bernard, L. , NGUYEN, Son, T. , NGUYEN, Anh, N. , SEUTTER, Sean, M. , TAO, Xianzhi
IPC分类号： H01L21/205
CPC分类号： H01L21/6719 , C23C16/4401 , C23C16/4409 , C23C16/45512 , C23C16/45561 , H01L21/68742 , H01L21/68785
摘要： Embodiments of the invention provide improved apparatus for depositing layers on substrates, such as by chemical vapor deposition (CVD). The inventive apparatus disclosed herein may advantageously facilitate one or more of depositing films having reduced film thickness non-uniformity within a given process chamber, improved particle performance (e.g., reduced particles on films formed in the process chamber), chamber-to-chamber performance matching amongst a plurality of process chambers, and improved process chamber serviceability.
摘要翻译：本发明的实施例提供了用于在衬底上沉积层（例如通过化学气相沉积（CVD））的改进的装置。本文公开的本发明的装置可以有利地促进一种或多种在给定的处理室内具有降低的膜厚度不均匀的沉积膜，改善的颗粒性能（例如，在处理室中形成的膜上的还原颗粒），室到室的性能在多个处理室之间进行匹配，以及改进的处理室可维护性。

10. 发明申请

WO2010118293A3 HVPE CHAMBER HARDWARE 审中-公开
公开(公告)号：WO2010118293A3
公开(公告)日：2010-10-14
申请号：PCT/US2010/030492
申请日：2010-04-09
申请人： APPLIED MATERIALS, INC. , ISHIKAWA, Tetsuya , QUACH, David, H. , CHANG, Anzhong , KRYLIOUK, Olga , MELNIK, Yuriy , RATIA, Harsukhdeep, S. , NGUYEN, Son, T. , PANG, Lily
发明人： ISHIKAWA, Tetsuya , QUACH, David, H. , CHANG, Anzhong , KRYLIOUK, Olga , MELNIK, Yuriy , RATIA, Harsukhdeep, S. , NGUYEN, Son, T. , PANG, Lily
IPC分类号： H01L21/20 , H01L33/02
摘要： Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.

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