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1. 发明申请

WO2010118295A3 HVPE PRECURSOR SOURCE HARDWARE 审中-公开
标题翻译： HVPE前驱源硬件
公开(公告)号：WO2010118295A3
公开(公告)日：2011-01-20
申请号：PCT/US2010030496
申请日：2010-04-09
申请人： APPLIED MATERIALS INC , ISHIKAWA TETSUYA , QUACH DAVID H , CHANG ANZHONG , KRYLIOUK OLGA , MELNIK YURIY , RATIA HARSUKHDEEP S , NGUYEN SON T , PANG LILY
发明人： ISHIKAWA TETSUYA , QUACH DAVID H , CHANG ANZHONG , KRYLIOUK OLGA , MELNIK YURIY , RATIA HARSUKHDEEP S , NGUYEN SON T , PANG LILY
IPC分类号： H01L21/20
CPC分类号： C30B29/403 , C23C16/34 , C23C16/4401 , C23C16/45565 , C23C16/46 , C30B25/02 , C30B29/406 , Y10T137/479 , Y10T137/4807 , Y10T137/4824 , Y10T137/7504 , Y10T137/8376
摘要： Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.
摘要翻译：本文公开的实施例通常涉及HVPE室。腔室可以具有耦合到其上的两个分离的前体源，以允许沉积两个分开的层。例如，镓源和单独的铝源可以耦合到处理室以允许氮化镓和氮化铝分别沉积在相同处理室中的衬底上。氮可以在与镓和铝分开的位置和在较低温度下被引入处理室。不同的温度导致气体混合在一起，反应并沉积在基板上，而在室壁上很少或没有沉积。

2. 发明申请

WO2010129292A3 CLUSTER TOOL FOR LEDS 审中-公开
标题翻译： LED集群工具
公开(公告)号：WO2010129292A3
公开(公告)日：2011-02-17
申请号：PCT/US2010032597
申请日：2010-04-27
申请人： APPLIED MATERIALS INC , NIJHAWAN SANDEEP , BURROWS BRIAN H , ISHIKAWA TETSUYA , KRYLIOUK OLGA , VASUDEV ANAND , SU JIE , QUACH DAVID H , CHANG ANZHONG , MELNIK YURIY , RATIA HARSUKHDEEP S , NGUYEN SON T , PANG LILY
发明人： NIJHAWAN SANDEEP , BURROWS BRIAN H , ISHIKAWA TETSUYA , KRYLIOUK OLGA , VASUDEV ANAND , SU JIE , QUACH DAVID H , CHANG ANZHONG , MELNIK YURIY , RATIA HARSUKHDEEP S , NGUYEN SON T , PANG LILY
IPC分类号： H01L33/00
CPC分类号： H01L21/67109 , C30B25/02 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/67115 , H01L21/67167 , H01L21/67207 , H01L33/007
摘要： The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element and nitrogen on substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process or a metal organic chemical vapor deposition (MOCVD) process, forming a second layer comprising a second group-III element and nitrogen over the first layer in a second processing chamber by a MOCVD process, and forming a third layer comprising a third group-III element and nitrogen over the second layer by a MOCVD process.
摘要翻译：本发明总体上提供了用于形成LED结构的装置和方法。本发明的一个实施方案提供了一种制备复合氮化物结构的方法，包括通过氢化物气相外延（HVPE）工艺或金属有机物在第一处理室中在衬底上形成包含第一III族元素的第一层和氮化学气相沉积（MOCVD）工艺，通过MOCVD工艺在第二处理室中在第一层上形成包含第二III族元素的第二层和氮，并且形成包含第三族III族元素和氮的第三层第二层通过MOCVD过程。

3. 发明申请

WO2010129292A4 CLUSTER TOOL FOR LEDS 审中-公开
标题翻译： LED的集群工具
公开(公告)号：WO2010129292A4
公开(公告)日：2011-03-31
申请号：PCT/US2010032597
申请日：2010-04-27
申请人： APPLIED MATERIALS INC , NIJHAWAN SANDEEP , BURROWS BRIAN H , ISHIKAWA TETSUYA , KRYLIOUK OLGA , VASUDEV ANAND , SU JIE , QUACH DAVID H , CHANG ANZHONG , MELNIK YURIY , RATIA HARSUKHDEEP S , NGUYEN SON T , PANG LILY
发明人： NIJHAWAN SANDEEP , BURROWS BRIAN H , ISHIKAWA TETSUYA , KRYLIOUK OLGA , VASUDEV ANAND , SU JIE , QUACH DAVID H , CHANG ANZHONG , MELNIK YURIY , RATIA HARSUKHDEEP S , NGUYEN SON T , PANG LILY
IPC分类号： H01L33/00
CPC分类号： H01L21/67109 , C30B25/02 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/67115 , H01L21/67167 , H01L21/67207 , H01L33/007
摘要： The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element and nitrogen on substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process or a metal organic chemical vapor deposition (MOCVD) process, forming a second layer comprising a second group-III element and nitrogen over the first layer in a second processing chamber by a MOCVD process, and forming a third layer comprising a third group-III element and nitrogen over the second layer by a MOCVD process.
摘要翻译：本发明通常提供用于形成LED结构的装置和方法。本发明的一个实施例提供了一种用于制造化合物氮化物结构的方法，包括：通过氢化物气相外延（HVPE）工艺或金属有机物在第一处理室中在衬底上形成包含第一III族元素和氮的第一层或氮化学气相沉积（MOCVD）工艺，通过MOCVD工艺在第二处理室中的第一层上形成包括第二III族元素和氮的第二层，并且形成包含第三III族元素和氮上的第三层第二层采用MOCVD工艺。

4. 发明申请

WO2010118293A2 HVPE CHAMBER HARDWARE 审中-公开
标题翻译： HVPE室硬件
公开(公告)号：WO2010118293A2
公开(公告)日：2010-10-14
申请号：PCT/US2010030492
申请日：2010-04-09
申请人： APPLIED MATERIALS INC , ISHIKAWA TETSUYA , QUACH DAVID H , CHANG ANZHONG , KRYLIOUK OLGA , MELNIK YURIY , RATIA HARSUKHDEEP S , NGUYEN SON T , PANG LILY
发明人： ISHIKAWA TETSUYA , QUACH DAVID H , CHANG ANZHONG , KRYLIOUK OLGA , MELNIK YURIY , RATIA HARSUKHDEEP S , NGUYEN SON T , PANG LILY
IPC分类号： H01L21/20 , H01L33/02
CPC分类号： C30B29/403 , C23C16/34 , C23C16/4401 , C23C16/45565 , C23C16/46 , C30B25/02 , C30B29/406 , Y10T137/479 , Y10T137/4807 , Y10T137/4824 , Y10T137/7504 , Y10T137/8376
摘要： Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.
摘要翻译：本文公开的实施例通常涉及HVPE室。腔室可以具有耦合到其上的两个分离的前体源，以允许沉积两个分开的层。例如，镓源和单独的铝源可以耦合到处理室以允许氮化镓和氮化铝分别沉积在相同处理室中的衬底上。氮可以在与镓和铝分开的位置和在较低温度下被引入处理室。不同的温度导致气体混合在一起，反应并沉积在基板上，在室壁上很少或没有沉积。

5. 发明申请

WO2006055145A3 CURRENT COLLIMATION FOR THIN SEED AND DIRECT PLATING 审中-公开
标题翻译：目前的种植和直接施肥
公开(公告)号：WO2006055145A3
公开(公告)日：2007-06-28
申请号：PCT/US2005037149
申请日：2005-10-14
申请人： APPLIED MATERIALS INC , HERCHEN HARALD , DUKOVIC JOHN O , PANG LILY
发明人： HERCHEN HARALD , DUKOVIC JOHN O , PANG LILY
IPC分类号： H01L21/288 , C25D7/12 , C25D17/10 , C25D17/12
CPC分类号： C25D17/008 , C25D7/123 , C25D17/001 , C25D17/007
摘要： A method and apparatus for plating a conductive material onto a substrate is provided. The apparatus includes a fluid processing cell having a fluid basin configured to contain an electrolyte solution and having an opening configured to receive a substrate for processing, an anode assembly positioned in the fluid basin, and a collimator positioned in the fluid basin between the anode assembly and the opening.
摘要翻译：提供了一种用于将导电材料电镀到基底上的方法和装置。该装置包括流体处理池，流体池被配置为容纳电解质溶液，并且具有构造成接收用于处理的基板的开口，定位在流体池中的阳极组件和位于阳极组件之间的流体池中的准直器和开幕。

6. 发明专利

JP2003142400A ROTATING COATING APPARATUS 审中-公开
公开(公告)号：JP2003142400A
公开(公告)日：2003-05-16
申请号：JP2002251571
申请日：2002-08-29
申请人： APPLIED MATERIALS INC
发明人： IKEDA TORU , PANG LILY
IPC分类号： B05C11/08 , H01L21/00 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a rotating coating apparatus, which can surely prevent generation of turbulent flow inside a vessel. SOLUTION: Within the vessel 2 of the rotating coating apparatus 1, a rotatable support base 4 to support a wafer W and an arm 6 to drop the chemical liquid on the wafer W are installed. Moreover, the rotating coating apparatus 1 is also provided with a gas-leading path 12 for leading the laminar-flow forming gas into the vessel 2. This gas-leading path 12 includes a glass filter, provided at the upper part of the vessel 2. The lamina-flow forming gas is introduced into the vessel 2 via this gas filter 13. In addition, the vessel 2 is also provided with a wall 15, which is formed to spread continuously in the manner of a curve toward the lower part from the edge at the lower end of the glass filter 13. Accordingly, a down-flow of laminar-flow forming gas is generated, in the entire part of the horizontal direction in a region surrounded by the wall 15 located inside the vessel 2.

7. 发明专利

JP2003145014A ROTARY COATING APPARATUS 审中-公开
公开(公告)号：JP2003145014A
公开(公告)日：2003-05-20
申请号：JP2001335323
申请日：2001-10-31
申请人： APPLIED MATERIALS INC
发明人： IKEDA TORU , PANG LILY , RICK ROBERT
IPC分类号： G03F7/16 , B05C11/08 , H01L21/027 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a rotary coating apparatus in which a gas flowing along the surface of a semiconductor wafer is stabilized. SOLUTION: The rotary coating apparatus 10 is provided with a chamber 12, a supporting table 16 arranged rotatably in the chamber and for supporting the semiconductor wafer W, a liquid chemical dropping apparatus 20 for dropping a liquid chemical to be applied on the wafer supported by the supporting table 16 and a rotary driven gas flow producing apparatus 40 in which an inside opening part 50 is arranged oppositely to the outer circumferential edge of the wafer supported by the supporting table and which has a flow passage extending to an outside opening part 52 from the inside opening part. In the structure, when the gas flow producing apparatus is rotary driven, the gas on the wafer is sucked by the inside opening of the gas flow producing apparatus and the gas on the substrate to be treated flows in a stable state like a laminar flow.

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