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1. 发明申请

US20100178490A1 ROLL-TO-ROLL PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION METHOD OF BARRIER LAYERS COMPRISING SILICON AND CARBON 审中-公开
标题翻译：滚筒式滚筒等离子体增强化学气相沉积方法包含硅和碳的阻挡层
公开(公告)号：US20100178490A1
公开(公告)日：2010-07-15
申请号：US12529393
申请日：2008-02-29
申请人： Glenn Cerny , Mark Loboda , Vasgen Shamamian , Steven Snow , William Weidner , Ludmil Zambov
发明人： Glenn Cerny , Mark Loboda , Vasgen Shamamian , Steven Snow , William Weidner , Ludmil Zambov
IPC分类号： B32B27/06 , C23C16/44 , C23C16/32 , B32B9/04 , B32B3/26
CPC分类号： C23C16/545 , C23C16/30 , C23C16/325 , Y10T428/249978 , Y10T428/31507 , Y10T428/3154 , Y10T428/31663
摘要： The present invention provides method and process for forming a barrier layer on a flexible substrate. The continuous roll-to-roll method includes providing a substrate to a processing chamber using at least one roller configured to guide the substrate through the processing chamber. The process includes depositing a barrier layer adjacent the substrate by exposing at least one portion of the substrate that is within the processing chamber to plasma comprising a silicon-and-carbon containing precursor gas. The present invention is further directed to a coated flexible substrates comprising a barrier layer based on the structural unit SiC:H. The barrier layer possesses high density and low porosity. Still further, the barrier layer exhibits low water vapor transmission rate (WVTR) in the range of 10−2-10−3 g.m−2d−1 and is appropriate for very low permeability applications.
摘要翻译：本发明提供了在柔性基板上形成阻挡层的方法和工艺。连续的卷对卷方法包括使用至少一个构造成将基底引导通过处理室的辊将处理室提供衬底。该方法包括通过将处理室内的衬底的至少一部分暴露于包含含硅和碳的前体气体的等离子体来沉积邻近衬底的阻挡层。本发明进一步涉及包含基于结构单元SiC：H的阻挡层的涂覆的柔性基底。阻隔层具有高密度和低孔隙率。此外，阻挡层在10-2-10-3g.m-2d-1的范围内表现出低的水蒸汽透过率（WVTR），并且适用于非常低的渗透性应用。

2. 发明授权

US07736728B2 Coated substrates and methods for their preparation 有权
标题翻译：涂布底物及其制备方法
公开(公告)号：US07736728B2
公开(公告)日：2010-06-15
申请号：US11629065
申请日：2005-08-12
申请人： Mark Loboda , Steven Snow , William Weidner , Ludmil Zambov
发明人： Mark Loboda , Steven Snow , William Weidner , Ludmil Zambov
IPC分类号： B32B7/02 , B32B9/00
CPC分类号： C23C28/322 , C23C28/34 , C23C28/341 , C23C28/345 , C23C28/3455 , C23C28/42 , C23C28/44 , H01L21/02126 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/3145 , H01L21/31633 , Y10T428/24975 , Y10T428/24992
摘要： Coated substrates containing at least one barrier layer comprising hydrogenated silicon oxycarbide having a density of at least 1.6 g/cm3 and at least one barrier layer selected from aluminum, aluminum oxide, aluminum nitride, aluminum oxynitride, titanium, titanium oxide, titanium nitride, and titanium oxynitride.
摘要翻译：包含至少一个阻挡层的涂覆基材包括密度为至少1.6g / cm 3的氢化硅氧烷和至少一种选自铝，氧化铝，氮化铝，氮氧化铝，钛，氧化钛，氮化钛和氮氧化钛。

3. 发明申请

US20090130463A1 Coated Substrates and Methods for their Preparation 审中-公开
标题翻译：涂层基材及其制备方法
公开(公告)号：US20090130463A1
公开(公告)日：2009-05-21
申请号：US11992871
申请日：2006-09-18
申请人： John Dean Albaugh , Masaaki Amako , Robert Charles Camilletti , Dong Choi , William Weidner , Ludmil Zambov
发明人： John Dean Albaugh , Masaaki Amako , Robert Charles Camilletti , Dong Choi , William Weidner , Ludmil Zambov
IPC分类号： B32B27/00 , B05D1/36
CPC分类号： H01L21/3122 , C08J7/045 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/02348 , H01L21/3124 , H01L21/318 , H01L51/5256 , Y10T428/31663
摘要： Coated substrates comprising an inorganic barrier coating and an interfacial coating, wherein the interfacial coating comprises a cured product of a silicone resin having silicon-bonded radiation-sensitive groups; and methods of preparing the coated substrates.
摘要翻译：包括无机阻隔涂层和界面涂层的涂覆基材，其中所述界面涂层包含具有硅键合的辐射敏感基团的硅树脂的固化产物; 以及制备涂覆的基材的方法。

4. 发明申请

US20070248768A1 Coated Substrates and Methods for Their Preparation 有权
标题翻译：涂层基材及其制备方法
公开(公告)号：US20070248768A1
公开(公告)日：2007-10-25
申请号：US11631579
申请日：2005-08-12
申请人： Mark Loboda , Steven Snow , William Weidner , Ludmil Zambov
发明人： Mark Loboda , Steven Snow , William Weidner , Ludmil Zambov
IPC分类号： C23C16/42 , H05H1/00
CPC分类号： C23C16/45523 , C23C16/30 , C23C16/401 , H01L21/02126 , H01L21/022 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/3122 , H01L21/31633 , H01L51/5256 , Y10T428/24992 , Y10T428/249921
摘要： Coated substrates containing a barrier layer comprising hydrogenated silicon oxycarbide having a density of at least 1.6 g/cm3 and methods of preparing the coated substrates.
摘要翻译：包含密度为至少1.6g / cm 3的氢化碳氧化碳的阻挡层的涂覆基材和制备涂布的基材的方法。

5. 发明申请

US20130187185A1 Electronic Article and Method of Forming 审中-公开
标题翻译：电子文章和形成方法
公开(公告)号：US20130187185A1
公开(公告)日：2013-07-25
申请号：US13825514
申请日：2010-09-22
申请人： David Deshazer , Udo Pernisz , Ludmil Zambov
发明人： David Deshazer , Udo Pernisz , Ludmil Zambov
IPC分类号： H01L31/0232 , H01L33/58
CPC分类号： H01L31/02327 , H01L31/02168 , H01L33/44 , H01L33/56 , H01L33/58 , Y02E10/50
摘要： An electronic article includes an optoelectronic semiconductor having a refractive index of 3.7±2 and a dielectric layer disposed on the optoelectronic semiconductor. The dielectric layer has a thickness of at least 50 μm and a refractive index of 1.4±0.1. The electronic article includes a gradient refractive index coating (GRIC) that is disposed on the optoelectronic semiconductor and that has a thickness of from 50 to 400 nm. The refractive index of the GRIC varies along the thickness from 2.7±0.7 to 1.5±0.1. The GRIC also includes a gradient of a carbide and an oxycarbide along the thickness. The carbide and the oxycarbide each independently include at least one silicon or germanium atom. The article is formed by continuously depositing the GRIC using plasma-enhanced chemical vapor deposition in a dual frequency configuration and subsequently disposing the dielectric layer on the GRIC.
摘要翻译：电子制品包括折射率为3.7±2的光电半导体和设置在光电子半导体上的电介质层。电介质层的厚度至少为50μm，折射率为1.4±0.1。电子制品包括设置在光电子半导体上并具有50至400nm厚度的梯度折射率涂层（GRIC）。 GRIC的折射率沿厚度从2.7±0.7变化到1.5±0.1。 GRIC还包括沿着厚度的碳化物和碳氧化物的梯度。碳化物和碳氧化物各自独立地包括至少一个硅或锗原子。该物品通过使用等离子体增强化学气相沉积以双频配置连续沉积GRIC并随后将介电层设置在GRIC上而形成。

6. 发明授权

US07622193B2 Coated substrates and methods for their preparation 有权
标题翻译：涂布底物及其制备方法
公开(公告)号：US07622193B2
公开(公告)日：2009-11-24
申请号：US11631579
申请日：2005-08-12
申请人： Mark Loboda , Steven Snow , William Weidner , Ludmil Zambov
发明人： Mark Loboda , Steven Snow , William Weidner , Ludmil Zambov
IPC分类号： B32B9/04
CPC分类号： C23C16/45523 , C23C16/30 , C23C16/401 , H01L21/02126 , H01L21/022 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/3122 , H01L21/31633 , H01L51/5256 , Y10T428/24992 , Y10T428/249921
摘要： Coated substrates containing a barrier layer comprising hydrogenated silicon oxycarbide having a density of at least 1.6 g/cm3 and methods of preparing the coated substrates.
摘要翻译：含有密度为至少1.6g / cm 3的氢化硅氧烷的阻挡层的涂布基材和制备涂布的基材的方法。

7. 发明申请

US20130012087A1 Cured Organopolysiloxane Resin Film Having Gas Barrier Properties and Method Of Producing The Same 审中-公开
标题翻译：具有阻气性的固化有机聚硅氧烷树脂膜及其制造方法
公开(公告)号：US20130012087A1
公开(公告)日：2013-01-10
申请号：US13520359
申请日：2011-01-07
申请人： Maki Itoh , Michitaka Suto , Bizhong Zhu , Dimitris Elias Katsoulis , Ludmil Zambov
发明人： Maki Itoh , Michitaka Suto , Bizhong Zhu , Dimitris Elias Katsoulis , Ludmil Zambov
IPC分类号： B32B27/04 , C23C14/06 , C23C16/40 , B05D3/06 , C23C16/34 , C23C16/30
CPC分类号： C09D183/04 , C08J5/24 , C08J2383/04 , Y10T428/31663 , Y10T442/2098
摘要： A cured organopolysiloxane resin film having gas barrier properties comprising a fiber-reinforced film made of a hydrosilylation-cured organopolysiloxane resin and having a transparent inorganic layer selected from silicon oxynitride layer, silicon nitride layer, and silicon oxide layer formed on the fiber-reinforced film wherein a layer of cured organopolysiloxane that contains an organic functional group, silanol group, hydrosilyl group, or an organic group produced by the polymerization of polymerizable organic functional groups is interposed between said fiber-reinforced film and inorganic layer. Also, a method of producing this cured organopolysiloxane resin film having gas barrier properties.
摘要翻译：具有阻气性的固化的有机聚硅氧烷树脂膜包含由氢化硅烷化固化的有机聚硅氧烷树脂制成的纤维增强膜，并且具有选自形成在纤维增强膜上的氧氮化硅层，氮化硅层和氧化硅层的透明无机层其中含有有机官能团，硅烷醇基，氢化硅烷基或通过可聚合有机官能团的聚合制备的有机基团的固化的有机聚硅氧烷层被插入在所述纤维增强膜和无机层之间。另外，制造具有阻气性的固化有机聚硅氧烷树脂膜的方法。

8. 发明申请

US20090053491A1 Coated Substrates and Methods for Their Preparation 有权
标题翻译：涂层基材及其制备方法
公开(公告)号：US20090053491A1
公开(公告)日：2009-02-26
申请号：US11629065
申请日：2005-08-12
申请人： Mark Loboda , Steven Snow , William Weidner , Ludmil Zambov
发明人： Mark Loboda , Steven Snow , William Weidner , Ludmil Zambov
IPC分类号： B32B7/02 , B32B9/00
CPC分类号： C23C28/322 , C23C28/34 , C23C28/341 , C23C28/345 , C23C28/3455 , C23C28/42 , C23C28/44 , H01L21/02126 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/3145 , H01L21/31633 , Y10T428/24975 , Y10T428/24992
摘要： Coated substrates containing at least one barrier layer comprising hydrogenated silicon oxycarbide having a density of at least 1.6 g/cm3 and at least one barrier layer selected from aluminum, aluminum oxide, aluminum nitride, aluminum oxynitride, titanium, titanium oxide, titanium nitride, and titanium oxynitride.
摘要翻译：包含至少一个阻挡层的涂覆基材包括密度为至少1.6g / cm 3的氢化硅氧烷和至少一种选自铝，氧化铝，氮化铝，氮氧化铝，钛，氧化钛，氮化钛和氮氧化钛。

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