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1. 发明授权

US08953716B1 DC offset estimation and compensaton for wideband systems 有权
标题翻译：宽带系统的直流偏移估计和补偿
公开(公告)号：US08953716B1
公开(公告)日：2015-02-10
申请号：US13611731
申请日：2012-09-12
申请人： GuruGuha Venkatasubramanian , Balasubramanian Ramachandran
发明人： GuruGuha Venkatasubramanian , Balasubramanian Ramachandran
IPC分类号： H03K9/00
CPC分类号： H04L25/061
摘要： Systems, methods, and other embodiments associated with a DC notch gear filter are described. According to one embodiment, an apparatus includes a digital high pass filter having a cutoff frequency and a gear mechanism configured to successively change the cutoff frequency of the high pass filter based on a sequence of cutoff frequencies. The apparatus also includes a direct current (DC) estimator configured to estimate a DC offset of a digital input signal to the high pass filter based, at least in part, on an output signal of the high pass filter as a cutoff frequency is successively changed. A direct current (DC) compensator is configured to subtract the estimated DC offset from the input signal to the high pass filter.
摘要翻译：描述了与直流凹口齿轮过滤器相关联的系统，方法和其它实施例。根据一个实施例，一种装置包括具有截止频率和齿轮机构的数字高通滤波器，其被配置为基于截止频率序列连续改变高通滤波器的截止频率。该装置还包括直流（DC）估计器，其被配置为至少部分地基于高通滤波器的输出信号来估计数字输入信号对高通滤波器的DC偏移，因为截止频率被连续地改变。直流（DC）补偿器被配置为从估计的直流偏移从输入信号减去高通滤波器。

2. 发明授权

US08217574B2 Lamp with internal fuse system 有权
标题翻译：带内部保险丝系统的灯
公开(公告)号：US08217574B2
公开(公告)日：2012-07-10
申请号：US12753532
申请日：2010-04-02
申请人： Balasubramanian Ramachandran , Nyi Oo Myo , Joseph M. Ranish , Akio Takahashi
发明人： Balasubramanian Ramachandran , Nyi Oo Myo , Joseph M. Ranish , Akio Takahashi
IPC分类号： H01K1/66 , H01K1/62
CPC分类号： H01K1/66
摘要： Embodiments of a lamp having an internal fuse system are provided herein. In some embodiments, a lamp may include a transparent housing; a filament disposed in the housing, the filament having a main body disposed between a first end and a second end of the filament; a first conductor coupled to the filament at the first end of the filament; a first interceptor bar disposed in the housing and beneath the main body of the filament, wherein the first interceptor bar is coupled to the second end of the filament; a second conductor disposed proximate the first end of the filament and conductively coupled to the second end of the filament via the first interceptor bar, wherein the first interceptor bar is positioned such that an electrical short forms between the first and second conductors when the main body of the filament contacts the first interceptor bar.
摘要翻译：本文提供具有内部熔丝系统的灯的实施例。在一些实施例中，灯可以包括透明外壳; 布置在所述壳体中的细丝，所述细丝具有设置在所述细丝的第一端和第二端之间的主体; 在灯丝的第一端处耦合到灯丝的第一导体; 设置在所述壳体中并在所述灯丝主体下方的第一拦截棒，其中所述第一拦截杆连接到所述灯丝的第二端; 第二导体，其设置在灯丝的第一端附近并且经由第一拦截棒与导电丝的第二端导电连接，其中第一拦截棒被定位成使得当主体的灯丝接触第一拦截棒。

3. 发明授权

US08109669B2 Temperature uniformity measurement during thermal processing 有权
标题翻译：热处理期间的温度均匀性测量
公开(公告)号：US08109669B2
公开(公告)日：2012-02-07
申请号：US12273842
申请日：2008-11-19
申请人： Wolfgang Aderhold , Jallepally Ravi , Balasubramanian Ramachandran , Aaron M. Hunter , Ilias Iliopoulos
发明人： Wolfgang Aderhold , Jallepally Ravi , Balasubramanian Ramachandran , Aaron M. Hunter , Ilias Iliopoulos
IPC分类号： H01L21/66 , H01L21/324
CPC分类号： G01J5/0003 , G01J5/0007 , G01J5/08 , G01J5/0846 , G01J2005/0081
摘要： Methods and systems for determining a radial differential metrology profile of a substrate heated in a process chamber is provided. Methods and systems for determining an angular or azimuthal differential metrology profile of a rotating substrate in a processing chamber are also provided. The radial and azimuthal differential metrology profiles are applied to adjust a reference metrology profile to provide a Virtual metrology of the process chamber. The virtual metrology is applied to control the performance of the process chamber.
摘要翻译：提供了用于确定在处理室中加热的衬底的径向微分计量学轮廓的方法和系统。还提供了用于确定处理室中的旋转衬底的角度或方位差分测量轮廓的方法和系统。应用径向和方位角微分计量分析来调整参考计量学概况，以提供处理室的虚拟计量。应用虚拟计量来控制处理室的性能。

4. 发明申请

US20100124249A1 TEMPERATURE UNIFORMITY MEASUREMENT DURING THERMAL PROCESSING 有权
标题翻译：热处理过程中的温度均匀度测量
公开(公告)号：US20100124249A1
公开(公告)日：2010-05-20
申请号：US12273842
申请日：2008-11-19
申请人： WOLFGANG ADERHOLD , Ravi Jallepally , Balasubramanian Ramachandran , Aaron M. Hunter , Ilias Iliopoulos
发明人： WOLFGANG ADERHOLD , Ravi Jallepally , Balasubramanian Ramachandran , Aaron M. Hunter , Ilias Iliopoulos
IPC分类号： G01J5/00
CPC分类号： G01J5/0003 , G01J5/0007 , G01J5/08 , G01J5/0846 , G01J2005/0081
摘要： Methods and systems for determining a radial differential metrology profile of a substrate heated in a process chamber is provided. Methods and systems for determining an angular or azimuthal differential metrology profile of a rotating substrate in a processing chamber are also provided. The radial and azimuthal differential metrology profiles are applied to adjust a reference metrology profile to provide a Virtual metrology of the process chamber. The virtual metrology is applied to control the performance of the process chamber.
摘要翻译：提供了用于确定在处理室中加热的衬底的径向微分计量学轮廓的方法和系统。还提供了用于确定处理室中的旋转衬底的角度或方位差分测量轮廓的方法和系统。应用径向和方位角微分计量分析来调整参考计量学概况，以提供处理室的虚拟计量。应用虚拟计量来控制处理室的性能。

5. 发明授权

US06897131B2 Advances in spike anneal processes for ultra shallow junctions 失效
标题翻译：超浅结点尖峰退火工艺的进展
公开(公告)号：US06897131B2
公开(公告)日：2005-05-24
申请号：US10668682
申请日：2003-09-22
申请人： Balasubramanian Ramachandran , Ravi Jallepally , Ryan C. Boas , Sundar Ramamurthy , Amir Al-Bayati , Houda Graoui , Joseph M. Spear
发明人： Balasubramanian Ramachandran , Ravi Jallepally , Ryan C. Boas , Sundar Ramamurthy , Amir Al-Bayati , Houda Graoui , Joseph M. Spear
IPC分类号： H01L21/00 , H01L21/265 , H01L21/268 , H01L21/324 , H01L21/425
CPC分类号： H01L21/324 , H01L21/26513 , H01L21/2686 , H01L21/67109 , H01L21/67115
摘要： Lamp based spike annealing was improved to address the aggressive requirements of
摘要翻译：改进了基于灯的尖峰退火以满足<100nm超浅结点（USJ）技术的积极要求。改进的重点是提高冷却速率，从而提高尖峰锐度。然后将具有不同离子注入能量和剂量的硼离子注入衬底退火以表征尖峰退火的改进。在具有改进的尖峰轮廓退火的基底上实现了薄膜电阻和结深度的大于10％的改善。改进的尖峰退火具有与标准尖峰退火相同的可比均匀性。

6. 发明授权

US09347132B2 Optical endpoint detection system 有权
标题翻译：光端点检测系统
公开(公告)号：US09347132B2
公开(公告)日：2016-05-24
申请号：US13440564
申请日：2012-04-05
申请人： Balasubramanian Ramachandran , Masato Ishii , Aaron Muir Hunter
发明人： Balasubramanian Ramachandran , Masato Ishii , Aaron Muir Hunter
IPC分类号： B08B3/00 , C23C16/44 , H01L21/67 , C23C16/52
CPC分类号： B08B9/46 , B08B3/08 , B08B3/10 , C23C16/4405 , C23C16/52 , G01N21/94 , G01N2021/8416 , H01L21/67253
摘要： Methods and apparatus for determining an endpoint of a process chamber cleaning process are provided. In some embodiments, a processing system having an endpoint detection system may include a process chamber having internal surfaces requiring periodic cleaning due to processes performed in the process chamber; and an endpoint detection system that includes a light detector positioned to detect light reflected off of a first internal surface of the process chamber; and a controller coupled to the light detector and configured to determine an endpoint of a cleaning process based upon the detected reflected light.
摘要翻译：提供了用于确定处理室清洁过程的端点的方法和装置。在一些实施例中，具有端点检测系统的处理系统可以包括处理室，其具有由于处理室中执行的处理而需要定期清洁的内表面; 以及端点检测系统，其包括被定位成检测从所述处理室的第一内表面反射的光的光检测器; 以及耦合到光检测器并被配置为基于检测到的反射光来确定清洁处理的端点的控制器。

7. 发明授权

US08821643B2 In-situ chamber cleaning for an RTP chamber 有权
标题翻译： RTP室的原位室清洗
公开(公告)号：US08821643B2
公开(公告)日：2014-09-02
申请号：US13674737
申请日：2012-11-12
申请人： Balasubramanian Ramachandran , Tae Jung Kim , Jung Hoon Sun , Joung Woo Lee , Hwa Joong Lim , Sang Phil Lee , Joseph M. Ranish
发明人： Balasubramanian Ramachandran , Tae Jung Kim , Jung Hoon Sun , Joung Woo Lee , Hwa Joong Lim , Sang Phil Lee , Joseph M. Ranish
IPC分类号： B08B7/00
CPC分类号： B08B5/00 , B08B7/00 , B08B7/0071 , H01L21/324
摘要： A method of cleaning a chamber used for annealing doped wafer substrates. In one embodiment the method provides removing dopants deposited in an annealing chamber after an annealing process of a doped substrate by flowing one or more volatilizing gases into the annealing chamber, applying heat to volatilize the deposited dopants in the annealing chamber, and exhausting the chamber to remove volatilized dopants from the annealing chamber.
摘要翻译：一种清洗用于退火掺杂晶圆基板的室的方法。在一个实施方案中，该方法提供了在通过使一种或多种挥发气体进入退火室中的掺杂衬底的退火处理之后去除在退火室中沉积的掺杂剂，施加热量以挥发退火室中沉积的掺杂剂，并将该室排出从退火室中除去挥发的掺杂剂。

8. 发明授权

US08546271B2 Method of improving oxide growth rate of selective oxidation processes 有权
公开(公告)号：US08546271B2
公开(公告)日：2013-10-01
申请号：US13117931
申请日：2011-05-27
申请人： Yoshitaka Yokota , Norman Tam , Balasubramanian Ramachandran , Martin John Ripley
发明人： Yoshitaka Yokota , Norman Tam , Balasubramanian Ramachandran , Martin John Ripley
IPC分类号： H01L21/02
CPC分类号： H01L21/02238 , H01L21/0223 , H01L21/02255 , H01L21/28247 , H01L21/31662 , H01L21/32
摘要： A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate are not oxidized.

9. 发明授权

US08513626B2 Method and apparatus for reducing patterning effects on a substrate during radiation-based heating 有权
标题翻译：用于在基于辐射的加热期间减少对基板的图案化影响的方法和装置
公开(公告)号：US08513626B2
公开(公告)日：2013-08-20
申请号：US11622908
申请日：2007-01-12
申请人： Balasubramanian Ramachandran , Joseph Michael Ranish , Aaron Muir Hunter
发明人： Balasubramanian Ramachandran , Joseph Michael Ranish , Aaron Muir Hunter
IPC分类号： G02B5/00
CPC分类号： H01L21/67248 , H01L21/67115
摘要： Patterning effects on a substrate are reduced during radiation-based heating by filtering the radiation source or configuring the radiation source to produce radiation having different spectral characteristics. For the filtering, an optical filter may be used to truncate specific wavelengths of the radiation. The different configurations of the radiation source include a combination of one or more continuum radiation sources with one or more discrete spectrum sources, a combination of multiple discrete spectrum sources, or a combination of multiple continuum radiation sources. Furthermore, one or more of the radiation sources may be configured to have a substantially non-normal angle of incidence or polarized to reduce patterning effects on a substrate during radiation-based heating.
摘要翻译：通过过滤辐射源或配置辐射源产生具有不同光谱特性的辐射，在基于辐射的加热过程中，对衬底的图案化效果降低。为了滤波，可以使用滤光器来截断辐射的特定波长。辐射源的不同配置包括一个或多个连续辐射源与一个或多个离散光谱源，多个离散光谱源的组合或多个连续辐射源的组合的组合。此外，一个或多个辐射源可以被配置为具有基本上非正常的入射角或极化，以减少基于辐射的加热期间对衬底的图案化效应。

10. 发明申请

US20130178072A1 IN-SITU CHAMBER CLEANING FOR AN RTP CHAMBER 有权
标题翻译：用于RTP室的现场室清洁
公开(公告)号：US20130178072A1
公开(公告)日：2013-07-11
申请号：US13674737
申请日：2012-11-12
申请人： BALASUBRAMANIAN RAMACHANDRAN , Tae Jung Kim , Jung Hoon Sun , Joung Woo Lee , Hwa Joong Lim , Sang Phil Lee , Joseph M. Ranish
发明人： BALASUBRAMANIAN RAMACHANDRAN , Tae Jung Kim , Jung Hoon Sun , Joung Woo Lee , Hwa Joong Lim , Sang Phil Lee , Joseph M. Ranish
IPC分类号： B08B5/00 , H01L21/324
CPC分类号： B08B5/00 , B08B7/00 , B08B7/0071 , H01L21/324
摘要： A method of cleaning a chamber used for annealing doped wafer substrates. In one embodiment the method provides removing dopants deposited in an annealing chamber after an annealing process of a doped substrate by flowing one or more volatilizing gases into the annealing chamber, applying heat to volatilize the deposited dopants in the annealing chamber, and exhausting the chamber to remove volatilized dopants from the annealing chamber.
摘要翻译：一种清洗用于退火掺杂晶圆基板的室的方法。在一个实施方案中，该方法提供了在通过使一种或多种挥发气体进入退火室中的掺杂衬底的退火处理之后去除在退火室中沉积的掺杂剂，施加热量以挥发退火室中沉积的掺杂剂，并将该室排出从退火室中除去挥发的掺杂剂。

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