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1. 发明授权

US08217574B2 Lamp with internal fuse system 有权
标题翻译：带内部保险丝系统的灯
公开(公告)号：US08217574B2
公开(公告)日：2012-07-10
申请号：US12753532
申请日：2010-04-02
申请人： Balasubramanian Ramachandran , Nyi Oo Myo , Joseph M. Ranish , Akio Takahashi
发明人： Balasubramanian Ramachandran , Nyi Oo Myo , Joseph M. Ranish , Akio Takahashi
IPC分类号： H01K1/66 , H01K1/62
CPC分类号： H01K1/66
摘要： Embodiments of a lamp having an internal fuse system are provided herein. In some embodiments, a lamp may include a transparent housing; a filament disposed in the housing, the filament having a main body disposed between a first end and a second end of the filament; a first conductor coupled to the filament at the first end of the filament; a first interceptor bar disposed in the housing and beneath the main body of the filament, wherein the first interceptor bar is coupled to the second end of the filament; a second conductor disposed proximate the first end of the filament and conductively coupled to the second end of the filament via the first interceptor bar, wherein the first interceptor bar is positioned such that an electrical short forms between the first and second conductors when the main body of the filament contacts the first interceptor bar.
摘要翻译：本文提供具有内部熔丝系统的灯的实施例。在一些实施例中，灯可以包括透明外壳; 布置在所述壳体中的细丝，所述细丝具有设置在所述细丝的第一端和第二端之间的主体; 在灯丝的第一端处耦合到灯丝的第一导体; 设置在所述壳体中并在所述灯丝主体下方的第一拦截棒，其中所述第一拦截杆连接到所述灯丝的第二端; 第二导体，其设置在灯丝的第一端附近并且经由第一拦截棒与导电丝的第二端导电连接，其中第一拦截棒被定位成使得当主体的灯丝接触第一拦截棒。

2. 发明授权

US08772055B1 Multizone control of lamps in a conical lamphead using pyrometers 有权
标题翻译：使用高温计对锥形灯头中的灯进行多区域控制
公开(公告)号：US08772055B1
公开(公告)日：2014-07-08
申请号：US13796169
申请日：2013-03-12
申请人： Joseph M. Ranish , Paul Brillhart , Jose Antonio Marin , Satheesh Kuppurao , Balasubramanian Ramachandran , Swaminathan T. Srinivasan , Mehmet Tugrul Samir
发明人： Joseph M. Ranish , Paul Brillhart , Jose Antonio Marin , Satheesh Kuppurao , Balasubramanian Ramachandran , Swaminathan T. Srinivasan , Mehmet Tugrul Samir
IPC分类号： H01L21/00 , B05C11/00 , H05B6/66
CPC分类号： C30B25/105 , C23C16/4583 , C23C16/481 , C23C16/52 , C30B25/08 , C30B25/12 , C30B25/14 , C30B25/16 , G01J5/0007 , G01J5/10 , G01J2005/106 , H01L21/0262 , H01L21/67115 , H01L21/67248 , H01L22/10 , H01L22/20
摘要： A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors.
摘要翻译：描述了一种用于处理半导体衬底的方法和设备。该装置是具有光学透明的上部圆顶和下部圆顶的处理室。在处理过程中真空保持在处理室中。通过使热控制流体沿着加工区域外的上部圆顶流动来对上部圆顶进行热控制。散热灯靠近下穹顶定位，热传感器设置在灯之间。灯具已通电，并且控制器根据从热传感器接收的数据调节灯区的电源。

3. 发明授权

US06888104B1 Thermally matched support ring for substrate processing chamber 有权
标题翻译：用于衬底加工室的热匹配支撑环
公开(公告)号：US06888104B1
公开(公告)日：2005-05-03
申请号：US10773650
申请日：2004-02-05
申请人： Joseph M. Ranish , Aaron Muir Hunter , Balasubramanian Ramachandran , Jallepally Ravi , Sundar Ramamurthy , Vedapuram S. Achutharaman , Khurshed Sorabji
发明人： Joseph M. Ranish , Aaron Muir Hunter , Balasubramanian Ramachandran , Jallepally Ravi , Sundar Ramamurthy , Vedapuram S. Achutharaman , Khurshed Sorabji
IPC分类号： F27B5/14 , F27B17/00 , F27D5/00 , F27D19/00 , F27D21/00 , H01L21/687
CPC分类号： H01L21/68735 , F27B17/0025 , F27D5/0037 , F27D19/00 , F27D21/00 , H01L21/68757
摘要： A substrate support ring has a band having an inner perimeter that at least partially surrounds a periphery of the substrate. The band has a radiation absorption surface. A lip extends radially inwardly from the inner perimeter of the band to support the substrate. The band and lip can be formed from silicon carbide, and the radiation absorption surface can be an oxidized layer of silicon carbide. In one version, the band and lip have a combined thermal mass Tm, and the radiation absorption surface has an absorptivity A and a surface area Sa, such that the ratio (A×Sa)/Tm is from about 4×10−5 m2K/J to about 9×10−4 m2K/J.
摘要翻译：衬底支撑环具有带子，该带具有至少部分地围绕衬底周边的内周边。带具有辐射吸收表面。唇缘从带的内周向径向向内延伸以支撑基底。带和唇缘可以由碳化硅形成，并且辐射吸收表面可以是碳化硅的氧化层。在一个版本中，带和唇具有组合的热质量T m，并且辐射吸收表面具有吸收率A和表面积S SUB，使得比率（AxS a）/ T m是约4×10 -5 / 2K / J至约9×10 9 / SUP> -4 / 2K / J。

4. 发明授权

US08821643B2 In-situ chamber cleaning for an RTP chamber 有权
标题翻译： RTP室的原位室清洗
公开(公告)号：US08821643B2
公开(公告)日：2014-09-02
申请号：US13674737
申请日：2012-11-12
申请人： Balasubramanian Ramachandran , Tae Jung Kim , Jung Hoon Sun , Joung Woo Lee , Hwa Joong Lim , Sang Phil Lee , Joseph M. Ranish
发明人： Balasubramanian Ramachandran , Tae Jung Kim , Jung Hoon Sun , Joung Woo Lee , Hwa Joong Lim , Sang Phil Lee , Joseph M. Ranish
IPC分类号： B08B7/00
CPC分类号： B08B5/00 , B08B7/00 , B08B7/0071 , H01L21/324
摘要： A method of cleaning a chamber used for annealing doped wafer substrates. In one embodiment the method provides removing dopants deposited in an annealing chamber after an annealing process of a doped substrate by flowing one or more volatilizing gases into the annealing chamber, applying heat to volatilize the deposited dopants in the annealing chamber, and exhausting the chamber to remove volatilized dopants from the annealing chamber.
摘要翻译：一种清洗用于退火掺杂晶圆基板的室的方法。在一个实施方案中，该方法提供了在通过使一种或多种挥发气体进入退火室中的掺杂衬底的退火处理之后去除在退火室中沉积的掺杂剂，施加热量以挥发退火室中沉积的掺杂剂，并将该室排出从退火室中除去挥发的掺杂剂。

5. 发明授权

US09870919B2 Process chamber having separate process gas and purge gas regions 有权
公开(公告)号：US09870919B2
公开(公告)日：2018-01-16
申请号：US13864849
申请日：2013-04-17
申请人： Joseph M. Ranish , Paul Brillhart , Jose Antonio Marin , Satheesh Kuppurao , Balasubramanian Ramachandran , Swaminathan T. Srinivasan , Mehmet Tugrul Samir
发明人： Joseph M. Ranish , Paul Brillhart , Jose Antonio Marin , Satheesh Kuppurao , Balasubramanian Ramachandran , Swaminathan T. Srinivasan , Mehmet Tugrul Samir
IPC分类号： H01L21/02 , H01L21/67
CPC分类号： H01L21/0262 , H01L21/67017 , H01L21/67109 , H01L21/67115
摘要： Embodiments of the present invention generally relate to chambers and methods of processing substrates therein. The chambers generally include separate process gas and purge gas regions. The process gas region and purge gas region each have a respective gas inlet and gas outlet. The methods generally include positioning a substrate on a substrate support within the chamber. The plane of the substrate support defines the boundary between a process gas region and purge gas region. Purge gas is introduced into the purge gas region through at least one purge gas inlet, and removed from the purge gas region using at least one purge gas outlet. The process gas is introduced into the process gas region through at least one process gas inlet, and removed from the process gas region through at least one process gas outlet. The process gas is thermally decomposed to deposit a material on the substrate.

6. 发明授权

US09127360B2 Epitaxial chamber with cross flow 有权
标题翻译：具有交叉流动的外延室
公开(公告)号：US09127360B2
公开(公告)日：2015-09-08
申请号：US12887647
申请日：2010-09-22
申请人： Balasubramanian Ramachandran , Errol Antonio C. Sanchez , Nyi O. Myo , Kevin Joseph Bautista , Harpreet Singh Juneja , Zuoming Zhu
发明人： Balasubramanian Ramachandran , Errol Antonio C. Sanchez , Nyi O. Myo , Kevin Joseph Bautista , Harpreet Singh Juneja , Zuoming Zhu
IPC分类号： C30B25/14 , C23C16/455 , H01L21/02
CPC分类号： C23C16/455 , C23C16/45523 , C30B25/14 , H01L21/02532 , H01L21/02573 , H01L21/0262
摘要： Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber having a substrate support disposed therein to support a processing surface of a substrate at a desired position within the process chamber; a first inlet port to provide a first process gas over the processing surface of the substrate in a first direction; a second inlet port to provide a second process gas over the processing surface of the substrate in a second direction different from the first direction, wherein an azimuthal angle measured between the first direction and the second direction with respect to a central axis of the substrate support is up to about 145 degrees; and an exhaust port disposed opposite the first inlet port to exhaust the first and second process gases from the process chamber.
摘要翻译：本文提供了用于处理衬底的方法和设备。在一些实施例中，用于处理衬底的设备包括处理室，其具有设置在其中的衬底支撑件，以在处理室内的期望位置处支撑衬底的处理表面; 第一入口端口，用于在第一方向上在衬底的处理表面上提供第一工艺气体; 第二入口端口，用于在不同于第一方向的第二方向上在衬底的处理表面上提供第二工艺气体，其中在第一方向和第二方向之间相对于衬底支撑件的中心轴线测量的方位角高达约145度; 以及与第一入口相对设置的排气口，以从处理室排出第一和第二处理气体。

7. 发明申请

US20090081884A1 METHOD OF IMPROVING OXIDE GROWTH RATE OF SELECTIVE OXIDATION PROCESSES 有权
标题翻译：改善选择性氧化过程氧化生长速率的方法
公开(公告)号：US20090081884A1
公开(公告)日：2009-03-26
申请号：US11860161
申请日：2007-09-24
申请人： YOSHITAKA YOKOTA , Norman Tam , Balasubramanian Ramachandran , Martin John Ripley
发明人： YOSHITAKA YOKOTA , Norman Tam , Balasubramanian Ramachandran , Martin John Ripley
IPC分类号： H01L21/316
CPC分类号： H01L21/02238 , H01L21/0223 , H01L21/02255 , H01L21/28247 , H01L21/31662 , H01L21/32
摘要： A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate are not oxidized.
摘要翻译：公开并要求保护半导体器件中含硅材料的选择性氧化的方法。一方面，快速热处理装置用于通过在富氢气氛中高压下原位蒸汽产生来选择性氧化基板。衬底中的其它材料，例如金属和阻挡层，不被氧化。

8. 发明申请

US20080115808A1 IN-SITU CHAMBER CLEANING FOR AN RTP CHAMBER 审中-公开
标题翻译：用于RTP室的现场室清洁
公开(公告)号：US20080115808A1
公开(公告)日：2008-05-22
申请号：US11561868
申请日：2006-11-20
申请人： Balasubramanian Ramachandran , Tae Jung Kim , Jung Hoon Sun , Joung Woo Lee , Hwa Joong Lim , Sang Phil Lee , Joseph Michael Ranish
发明人： Balasubramanian Ramachandran , Tae Jung Kim , Jung Hoon Sun , Joung Woo Lee , Hwa Joong Lim , Sang Phil Lee , Joseph Michael Ranish
IPC分类号： B08B7/04
CPC分类号： B08B5/00 , B08B7/00 , B08B7/0071 , H01L21/324
摘要： A method of cleaning a chamber used for annealing doped wafer substrates. In one embodiment the method provides removing dopants deposited in an annealing chamber after an annealing process of a doped substrate by flowing one or more volatilizing gases into the annealing chamber, applying heat to volatilize the deposited dopants in the annealing chamber, and exhausting the chamber to remove volatilized dopants from the annealing chamber.
摘要翻译：一种清洗用于退火掺杂晶圆基板的室的方法。在一个实施方案中，该方法提供了在通过使一种或多种挥发气体进入退火室中的掺杂衬底的退火处理之后去除在退火室中沉积的掺杂剂，施加热量以挥发退火室中沉积的掺杂剂，并将该室排出从退火室中除去挥发的掺杂剂。

9. 发明授权

US07127367B2 Tailored temperature uniformity 失效
标题翻译：定制温度均匀性
公开(公告)号：US07127367B2
公开(公告)日：2006-10-24
申请号：US10950145
申请日：2004-09-24
申请人： Balasubramanian Ramachandran , Joseph Michael Ranish , Ravi Jallepally , Sundar Ramamurthy , Raman Achutharaman , Brian Haas , Aaron Hunter
发明人： Balasubramanian Ramachandran , Joseph Michael Ranish , Ravi Jallepally , Sundar Ramamurthy , Raman Achutharaman , Brian Haas , Aaron Hunter
IPC分类号： G01K5/00 , G01K7/00 , G01K11/00
CPC分类号： H01L21/67103
摘要： Method and apparatus for obtaining a tailored heat transfer profile in a chamber housing a microprocessor manufacturing process, including estimating heat transfer properties of the chamber; estimating heat absorptive properties of a wafer; adjusting the physical characteristics of the chamber to correct the heat transfer properties; and utilizing the chamber for manufacturing microprocessors.
摘要翻译：用于在容纳微处理器制造过程的腔室中获得定制的传热轮廓的方法和装置，包括估计腔室的传热特性; 估计晶片的吸热性能; 调整室的物理特性以校正传热性能; 并利用该腔室制造微处理器。

10. 发明申请

US20060086713A1 Method and apparatus for low temperature pyrometry useful for thermally processing silicon wafers 有权
公开(公告)号：US20060086713A1
公开(公告)日：2006-04-27
申请号：US10974003
申请日：2004-10-26
申请人： Aaron Hunter , Rajesh Ramanujam , Balasubramanian Ramachandran , Cornia Tanasa , Tarpan Dixit
发明人： Aaron Hunter , Rajesh Ramanujam , Balasubramanian Ramachandran , Cornia Tanasa , Tarpan Dixit
IPC分类号： A21B1/00 , A21B1/22 , F27D11/00
CPC分类号： F27B17/0025 , F27B5/04 , F27D21/0014 , H01L21/67115 , H01L21/67248 , H05B3/68
摘要： A rapid thermal processing (RTP) system including a transmission pyrometer monitoring the temperature dependent absorption of the silicon wafer for radiation from the RTP lamps at a reduced power level. A look-up table is created relating unnormalized values of photodetector photocurrents with wafer and radiant lamp temperatures. A calibrating step measures the photocurrent with known wafer and lamp temperatures and all photocurrents measured thereafter are accordingly normalized. The transmission pyrometer may be used for closed loop control for thermal treatments below 500° C. or used in the pre-heating phase for a higher temperature process including radiation pyrometry in closed loop control. The pre-heating temperature ramp rate may be controlled by measuring the initial ramp rate and readjusting the lamp power accordingly. Radiation and transmission pyrometers may be included in an integrated structure with a beam splitter dividing radiation from the wafer.

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