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1. 发明授权

US06350964B1 Power distribution printed circuit board for a semiconductor processing system 有权
标题翻译：用于半导体处理系统的配电印刷电路板
公开(公告)号：US06350964B1
公开(公告)日：2002-02-26
申请号：US09710518
申请日：2000-11-09
申请人： Ryan C. Boas , Paul J. Steffas
发明人： Ryan C. Boas , Paul J. Steffas
IPC分类号： F27B514
CPC分类号： H01L21/67115
摘要： A semiconductor processing system including a printed circuit board structure for delivering power to an assembly of radiant energy sources. The printed circuit board structure, in one configuration, forms an evacuable housing for the assembly of radiant energy sources.
摘要翻译：一种半导体处理系统，包括用于将功率传递到辐射能源的组件的印刷电路板结构。在一种配置中，印刷电路板结构形成用于组装辐射能源的可抽空外壳。

2. 发明授权

US06215106B1 Thermally processing a substrate 有权
标题翻译：热处理基材
公开(公告)号：US06215106B1
公开(公告)日：2001-04-10
申请号：US09350415
申请日：1999-07-08
申请人： Ryan C. Boas , Ajit Balakrishna , Benjamin B. Bierman , Brian L. Haas , Dean Jennings , Wolfgang R. Aderhold
发明人： Ryan C. Boas , Ajit Balakrishna , Benjamin B. Bierman , Brian L. Haas , Dean Jennings , Wolfgang R. Aderhold
IPC分类号： F27B514
CPC分类号： C23C16/45504 , C23C16/4401 , C23C16/4408 , C23C16/45508 , C23C16/45519 , C23C16/4586 , C23C16/46 , C23C16/52 , C30B25/10 , C30B25/14
摘要： A thermal processing method is described in which a temperature response of a substrate may be controlled during a heat-up phase or a cool-down phase, or during both phases. This reduces the thermal budget of the substrate and improves the quality and performance of devices formed on the substrate. In particular, by controlling the rate of heat transfer between the substrate and a thermal reservoir (e.g., a watercooled reflector plate assembly), the temperature response of the substrate may be controlled during the thermal process. The rate of heat transfer may changed by changing the thermal conductivity between the substrate and the thermal reservoir, by changing the emissivity of a surface of the thermal reservoir, or by changing the distance between the substrate and the thermal reservoir. The thermal conductivity may be changed by changing the characteristics of a thermal transport medium (e.g., a purge gas) located between the substrate and the thermal reservoir. For example, the thermal conductivity may be changed by changing the composition of the purge gas or the pressure of the purge gas between the substrate and the thermal reservoir. In one implementation, the substrate is heated in accordance with a heating schedule and, during the heating schedule, the rate of heat transfer between the substrate and a thermal reservoir inside the thermal processing system is changed. In another implementation, a first purge gas is supplied into the thermal processing system, the substrate is heated in accordance with a heating schedule, and a second purge gas that is different from the first purge gas is supplied into the thermal processing system.
摘要翻译：描述了一种热处理方法，其中可以在加热阶段或冷却阶段期间或在两个阶段期间控制衬底的温度响应。这降低了基板的热预算，并改善了在基板上形成的器件的质量和性能。特别地，通过控制基板和热储存器（例如，水冷反射板组件）之间的热传递速率，可以在热处理期间控制基板的温度响应。通过改变基底和热储层之间的热导率，通过改变热储层表面的发射率，或通过改变基底和热储层之间的距离来改变传热速率。可以通过改变位于基板和热储存器之间的热传输介质（例如，吹扫气体）的特性来改变热导率。例如，可以通过改变吹扫气体的组成或衬底和热存储器之间的吹扫气体的压力来改变热导率。在一个实施方案中，根据加热方案对基底进行加热，并且在加热计划期间改变基底和热处理系统内的热储存器之间的热传递速率。在另一实施方案中，将第一吹扫气体供应到热处理系统中，基于加热时间表加热基板，并且将不同于第一吹扫气体的第二吹扫气体供应到热处理系统中。

3. 发明授权

US06803546B1 Thermally processing a substrate 失效
标题翻译：热处理基材
公开(公告)号：US06803546B1
公开(公告)日：2004-10-12
申请号：US09611349
申请日：2000-07-06
申请人： Ryan C Boas , Ajit Balakrishna , Benjamin Bierman , Brian L Haas , Dean Jennings , Wolfgang Aderhold , Sundar Ramamurthy , Abhilash Mayur
发明人： Ryan C Boas , Ajit Balakrishna , Benjamin Bierman , Brian L Haas , Dean Jennings , Wolfgang Aderhold , Sundar Ramamurthy , Abhilash Mayur
IPC分类号： F27B514
CPC分类号： C30B25/10 , C30B31/12 , H01L21/67109 , H01L21/67115 , H01L21/67248
摘要： A thermal processing method is described in which a temperature response of a substrate may be controlled during a heat-up phase or a cool-down phase, or during both phases. This reduces the thermal budget of the substrate and improves the quality and performance of devices formed on the substrate. In particular, by controlling the rate of heat transfer between the substrate and a thermal reservoir (e.g., a water-cooled reflector plate assembly), the temperature response of the substrate may be controlled during the thermal process. The rate of heat transfer may be changed by changing the thermal conductivity between the substrate and the thermal reservoir, by changing the emissivity of a surface of the thermal reservoir, or by changing the distance between the substrate and the thermal reservoir.
摘要翻译：描述了一种热处理方法，其中可以在加热阶段或冷却阶段期间或在两个阶段期间控制衬底的温度响应。这降低了基板的热预算，并改善了在基板上形成的器件的质量和性能。特别地，通过控制基板和热储存器（例如，水冷反射板组件）之间的热传递速率，可以在热处理期间控制基板的温度响应。可以通过改变基底和热储层之间的热导率，改变热储层表面的发射率，或通过改变基底和热储层之间的距离来改变传热速率。

4. 发明授权

US06897131B2 Advances in spike anneal processes for ultra shallow junctions 失效
标题翻译：超浅结点尖峰退火工艺的进展
公开(公告)号：US06897131B2
公开(公告)日：2005-05-24
申请号：US10668682
申请日：2003-09-22
申请人： Balasubramanian Ramachandran , Ravi Jallepally , Ryan C. Boas , Sundar Ramamurthy , Amir Al-Bayati , Houda Graoui , Joseph M. Spear
发明人： Balasubramanian Ramachandran , Ravi Jallepally , Ryan C. Boas , Sundar Ramamurthy , Amir Al-Bayati , Houda Graoui , Joseph M. Spear
IPC分类号： H01L21/00 , H01L21/265 , H01L21/268 , H01L21/324 , H01L21/425
CPC分类号： H01L21/324 , H01L21/26513 , H01L21/2686 , H01L21/67109 , H01L21/67115
摘要： Lamp based spike annealing was improved to address the aggressive requirements of
摘要翻译：改进了基于灯的尖峰退火以满足<100nm超浅结点（USJ）技术的积极要求。改进的重点是提高冷却速率，从而提高尖峰锐度。然后将具有不同离子注入能量和剂量的硼离子注入衬底退火以表征尖峰退火的改进。在具有改进的尖峰轮廓退火的基底上实现了薄膜电阻和结深度的大于10％的改善。改进的尖峰退火具有与标准尖峰退火相同的可比均匀性。

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