基本信息:
- 专利标题： 半導体装置
- 专利标题（英）：SEMICONDUCTOR DEVICE
- 申请号：PCT/JP2022/024328 申请日：2022-06-17
- 公开(公告)号：WO2023032413A1 公开(公告)日：2023-03-09
- 发明人： 原 英夫
- 申请人： ローム株式会社
- 申请人地址： 〒6158585 京都府京都市右京区西院溝崎町２１番地 Kyoto
- 专利权人： ローム株式会社
- 当前专利权人： ローム株式会社
- 当前专利权人地址： 〒6158585 京都府京都市右京区西院溝崎町２１番地 Kyoto
- 代理机构： 特許業務法人 佐野特許事務所
- 优先权： JP2021-139893 2021-08-30
- 主分类号： H03K17/06
- IPC分类号： H03K17/06 ; G01R19/14 ; G01R19/165 ; H02M1/08 ; H02M3/155 ; H03K5/08 ; H03K17/08
This semiconductor device comprises: high-side and low-side, first and second output transistors; a first terminal that connects to a connection node between the first and second output transistors; and a second terminal configured to connect to the first terminal through a bootstrap capacitor. The first output transistor is driven on the basis of the voltage between the first and second terminals. A switch circuit is provided between a terminal to which a predetermined control power supply voltage is applied and the second terminal. The switch circuit has first and second switch elements that are N-channel MOSFETs connected in series. On-off control of the first and second switch elements is performed depending on the voltage at the first terminal.
IPC结构图谱:
| H | 电学 |
| --H03 | 基本电子电路 |
| ----H03K | 脉冲技术 |
| ------H03K17/00 | 电子开关或选通，即不通过通断接触的 |
| --------H03K17/06 | .保证全导通状态的改进 |