发明申请
US20080036018A1 METHOD OF FABRICATING SPACERS AND CLEANING METHOD OF POST-ETCHING AND SEMICONDUCTOR DEVICE
审中-公开
基本信息:
- 专利标题： METHOD OF FABRICATING SPACERS AND CLEANING METHOD OF POST-ETCHING AND SEMICONDUCTOR DEVICE
- 专利标题（中）：隔离层的制造方法和后处理和半导体器件的清洗方法
- 申请号：US11874683 申请日：2007-10-18
- 公开(公告)号：US20080036018A1 公开(公告)日：2008-02-14
- 发明人： Chuan-Kai Wang , Yi-Hsing Chen , Chia-Jui Liu , Juan-Yi Chen , Ming-Yi Lin
- 申请人： Chuan-Kai Wang , Yi-Hsing Chen , Chia-Jui Liu , Juan-Yi Chen , Ming-Yi Lin
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
A method of fabricating spacers is provided. The method includes providing a substrate with a device structure formed thereon. The device structure comprises a gate structure and a pair of source/drain regions. Then, a spacer material layer is formed over the substrate to cover the substrate and the device structure. Thereafter, an etching process is performed to remove a portion of the spacer material layer so that spacers are formed on the respective sidewalls of the gate structure. After that, a plasma treatment step is performed to form a spacer protection layer on the surface of the substrate, the spacers and the gate structure.
摘要（中）：
提供了制造间隔物的方法。 该方法包括提供其上形成有器件结构的衬底。 器件结构包括栅极结构和一对源极/漏极区域。 然后，在衬底上形成间隔材料层以覆盖衬底和器件结构。 此后，进行蚀刻处理以去除间隔材料层的一部分，使得在栅极结构的相应侧壁上形成间隔物。 之后，执行等离子体处理步骤，以在衬底的表面，间隔物和栅极结构上形成间隔保护层。