
基本信息:
- 专利标题: Apparatus and methods for a low inductance plasma chamber
- 专利标题(中):低电感等离子体室的装置和方法
- 申请号:US11179035 申请日:2005-07-11
- 公开(公告)号:US20060027327A1 公开(公告)日:2006-02-09
- 发明人: Carl Sorensen , John White , Suhail Anwar
- 申请人: Carl Sorensen , John White , Suhail Anwar
- 专利权人: APPLIED MATERIALS, INC.
- 当前专利权人: APPLIED MATERIALS, INC.
- 主分类号: C23F1/00
- IPC分类号: C23F1/00
摘要:
In certain aspects, a plasma chamber is provided that has (1) a chamber size of at least about 1.8 by 2.0 meters; and (2) an effective inductance having an inductive reactance of not more than about 12-15 ohms. The plasma chamber may be used, for example, to process substrates used for flat panel displays. Numerous other aspects are provided.
摘要(中):
在某些方面,提供了一种等离子体室,其具有(1)至少约1.8×2.0米的室尺寸; 和(2)具有不大于约12-15欧姆的感抗的有效电感。 等离子体室可以用于例如处理用于平板显示器的基板。 提供了许多其他方面。