![Low capacitance wiring layout and method for making same](/abs-image/US/2004/10/21/US20040207090A1/abs.jpg.150x150.jpg)
基本信息:
- 专利标题: Low capacitance wiring layout and method for making same
- 申请号:US10842455 申请日:2004-05-11
- 公开(公告)号:US20040207090A1 公开(公告)日:2004-10-21
- 发明人: Paul A. Farrar
- 主分类号: H01R012/04
- IPC分类号: H01R012/04 ; H05K001/11 ; H01L023/48 ; H01L023/52 ; H01L029/40
摘要:
Integrated circuits having multi-level wiring layouts designed to inhibit the capacitive-resistance effect, and a method for fabricating such integrated circuits, is described. The integrated circuits have at least two planes of wiring adjacent to each other and extending in the same direction. One embodiment may further include a larger than normal insulator material between planes of wiring extending in one direction and at least one plane of wiring extending in a second direction transverse to the first direction. Each of the wiring channels in a wiring plane may be offset relative to a respective wiring channel in the next adjacent wiring plane which extends in the same direction.
公开/授权文献:
- US07052987B2 Method for fabricating a low capacitance wiring layout 公开/授权日:2006-05-30