基本信息:
- 专利标题： Charge coupled device and method of fabricating the same
- 专利标题（中）：电荷耦合器件及其制造方法
- 申请号：US10086520 申请日：2002-03-04
- 公开(公告)号：US20020094630A1 公开(公告)日：2002-07-18
- 发明人： Seo Kyu Lee
- 申请人： LG Semicon Co., Ltd.
- 申请人地址： null
- 专利权人： LG Semicon Co., Ltd.
- 当前专利权人： LG Semicon Co., Ltd.
- 当前专利权人地址： null
- 优先权： KR79133/1997 19971230
- 主分类号： H01L021/8238
- IPC分类号： H01L021/8238 ; H01L021/336
摘要：
A CCD and method of fabricating the same, which reads signal charges completely and increases the fill factor of its pixel, to improve the sensitivity. The CCD having photodiodes in matrix form, includes a first interlevel insulating layer and first transfer gate sequentially formed between the photodiodes arranged in the row direction, a block insulating layer formed along the center of the first transfer gate, a second interlevel insulating layer formed on the first transfer gate, second and third transfer gates formed on the first transfer gate, being isolated from each other on the block insulating layer, a third interlevel insulating layer formed on the second and third transfer gates, and a fourth transfer gate formed on the third interlevel insulating layer, being placed on the second and third transfer gates.
摘要（中）：
一种CCD及其制造方法，其完全读取信号电荷并增加其像素的填充因子，以提高灵敏度。 具有矩阵形式的光电二极管的CCD包括顺序地形成在沿行方向布置的光电二极管之间的第一层间绝缘层和第一传输栅极，沿着第一传输栅极的中心形成的块绝缘层，形成在第二层间绝缘层上的第二层间绝缘层 形成在第一传输栅极上的第一传输栅极，第二和第三传输栅极在块绝缘层上彼此隔离，形成在第二和第三传输栅极上的第三层间绝缘层和形成在第二传输门上的第四传输栅极 第三层间绝缘层，放置在第二和第三传输门上。
公开/授权文献:
- US06558985B2 Charge coupled device and method of fabricating the same 公开/授权日：2003-05-06