基本信息:
- 专利标题： 電漿摻雜裝置及電漿摻雜方法
- 专利标题（英）：Plasma doping apparatus and plasma doping method
- 专利标题（中）：等离子掺杂设备及等离子掺杂方法
- 申请号：TW103144095 申请日：2014-12-17
- 公开(公告)号：TW201535483A 公开(公告)日：2015-09-16
- 发明人： 鄰嘉津彦 , TONARI, KAZUHIKO , 鈴木康司 , SUZUKI, KOUJI
- 申请人： 愛發科股份有限公司 , ULVAC, INC.
- 专利权人： 愛發科股份有限公司,ULVAC, INC.
- 当前专利权人： 愛發科股份有限公司,ULVAC, INC.
- 代理人： 賴正健; 陳昭明
- 优先权： 2013-260824 20131218
- 主分类号： H01L21/265
- IPC分类号： H01L21/265 ; H01J37/317
The present invention provides a plasma doping apparatus and a plasma doping method that can dope dopants with excellent reproducibility upon semiconductor substrates. The plasma doping method according to one embodiment of the present invention includes placing a substrate to be processed on a stage disposed within a chamber, heating partition walls that define plasma generating spaces within the chamber to a temperature over 300 DEG C, and forming plasma gas containing dopants having at least phosphorus in the plasma generating spaces, such that dopants are implanted into the substrate to be processed. Thus, discharge products are inhibited from attaching or accumulated onto the partition walls, and the dopants can be doped upon the substrates to be processed with excellent reproducibility.
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/26 | ....用波或粒子辐射轰击的 |
| ----------------H01L21/263 | .....带有高能辐射的 |
| ------------------H01L21/265 | ......产生离子注入的 |