基本信息:
- 专利标题: 可變電阻元件及其製造方法
- 专利标题(英):Variable resistive device and manufacturing method
- 专利标题(中):可变电阻组件及其制造方法
- 申请号:TW102131888 申请日:2013-09-04
- 公开(公告)号:TW201423985A 公开(公告)日:2014-06-16
- 发明人: 福田夏樹 , FUKUDA, NATSUKI , 福壽和紀 , FUKUJU, KAZUNORI , 西岡浩 , NISHIOKA, YUTAKA , 鄒弘綱 , SUU, KOUKOU
- 申请人: 愛發科股份有限公司 , ULVAC, INC.
- 专利权人: 愛發科股份有限公司,ULVAC, INC.
- 当前专利权人: 愛發科股份有限公司,ULVAC, INC.
- 代理人: 莊志強
- 优先权: 2012-194823 20120905
- 主分类号: H01L29/66
- IPC分类号: H01L29/66 ; H01L21/8242
Disclosed is a variable resistive device and manufacturing method, which's capable of preventing elements from being destroyed due to the over current and would not enlarge the size of the elements. Means for preventing elements from being destroyed due to the over current and from enlarging the size of the elements provided by the instant disclosure is as below. The variable resistive device (1) provided by one embodiment of the instant disclosure comprises: a lower electrode layer (3), an upper electrode layer (6), a first metal oxide layer (51), a second metal oxide layer (52), and a current limiting layer (4). The first metal oxide layer (51) having first resistance, is configured between the lower electrode layer (3) and the upper electrode layer (6). The second metal oxide layer (52) having a second resistance larger than the first resistance, is configured between the first metal oxide layer (51) and the upper electrode layer (6). The current limiting layer (4), having a third resistance larger than the first resistance and smaller than the second resistance, is configured between the lower electrode layer (3) and the first metal oxide layer (51).
公开/授权文献:
- TWI584470B 可變電阻元件及其製造方法 公开/授权日:2017-05-21