基本信息:
- 专利标题： 스핀 축적을 이용하여 스위치될 수 있고, 자기전기 장치들을 이용하여 선택 가능한 자기 메모리들을 제공하는 방법 및 시스템
- 专利标题（英）：KR102226572B1 - Method and system for providing magnetic memories switchable using spin accumulation and selectable using magnetoelectric devices
- 申请号：KR1020140100639 申请日：2014-08-05
- 公开(公告)号：KR102226572B1 公开(公告)日：2021-03-12
- 发明人： 크발코브스키,알렉시바실예비히 , 아팔코브,드미트로 , 니키틴,블라디미르 , 크로운비,모하매드토우픽
- 申请人： 삼성전자주식회사
- 申请人地址： , Samsung-ro, Yeongtong-gu...
- 专利权人： 삼성전자주식회사
- 当前专利权人： 삼성전자주식회사
- 当前专利权人地址： , Samsung-ro, Yeongtong-gu...
- 代理人： 특허법인 고려
- 优先权： US14/097,492 2013-12-05; US61/863,835 2013-08-08
- 主分类号： G11C11/16
- IPC分类号： G11C11/16
Magnetic memory is described. In one aspect, the magnetic memory includes magnetic junctions and at least one semi-spin valve (SSV) line adjacent to the magnetic junctions. Each of the magnetic junctions includes a magnetic free layer. The SSV line(s) includes a ferromagnetic layer and a nonmagnetic layer between the ferromagnetic layer and the magnetic junctions. The SSV line(s) is configured to apply spin accumulation torque to at least some of the magnetic junctions by accumulation of spin polarized current carriers from a current substantially in-plane. The free layer is configured to be written at least using torque by spin accumulation. In another aspect, the magnetic memory includes magnetic memory cells and at least one spin torque (ST) line similar to the SSV line. Each magnetic memory cell includes a magnetic junction(s) and magnetoelectric selection device(s) similar to the magnetic junctions described above.
公开/授权文献:
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EspacenetIPC结构图谱:
| G11C11/56 | 组优先于G11C11/02至G11C11/54中各组。 |
| --G11C11/02 | .应用磁性元件的 |
| ----G11C11/16 | ..应用磁自旋效应的存储元件的 |