专利号KR1020167018331 | 반도체 장치

专利标题： 반도체 장치
专利标题（英）：Semiconductor device
专利标题（中）：半导体器件
申请号：KR1020167018331 申请日：2014-07-17
公开(公告)号：KR1020160096673A 公开(公告)日：2016-08-16
发明人： 이와사키신야 , 가메야마사토루
申请人： 도요타 지도샤(주)
申请人地址： 일본국 아이치켄 도요타시 도요타쵸 *반지
专利权人： 도요타 지도샤(주)
当前专利权人： 도요타 지도샤（주）
当前专利权人地址： 일본국 아이치켄 도요타시 도요타쵸 *반지
代理人： 특허법인코리아나
优先权： JPJP-P-2013-260292 2013-12-17
国际申请： PCT/JP2014/069060 2014-07-17
国际公布： WO2015093086 2015-06-25
主分类号： H01L27/07
IPC分类号： H01L27/07 ; H01L29/739 ; H01L29/32 ; H01L21/322 ; H01L29/66

摘要：

소형이며, 또한, 게이트전위에의해서다이오드의순전압이잘 변화되지않는반도체장치를제공한다. 반도체기판의상면에노출되는범위에, 애노드영역과상부 IGBT 구조 (에미터영역과보디영역) 가형성되어있고, 애노드영역과상부 IGBT 구조의경계를따라서트렌치와게이트절연막과게이트전극이연장되어있고, 상기반도체기판의하면에노출되는범위에, 캐소드영역과컬렉터영역이형성되어있고, 상면측구조와하면측구조사이에드리프트영역이형성되어있고, 결정결함영역이캐소드영역의상측드리프트영역내와컬렉터영역의상측의드리프트영역내에걸쳐서연장되어있고, 반도체기판의두께를 x ㎛로 하고, 컬렉터영역의상측으로돌출되어있는부분의결정결함영역의폭을 y ㎛로 했을경우, y ≥ 0.007x- 1.09x + 126 의관계가만족되는반도체장치.

摘要（中）：

并且提供了其中二极管的正向电压没有被栅极电位很好改变的半导体器件。其中在所述半导体衬底，所述阳极区和上部IGBT结构（发射极区和体区）形式类型属性，因此，阳极区域的边界并且延伸至与栅极绝缘膜和栅电极的沟槽上部IGBT结构的上表面露出的范围内，和根据阴极区暴露于半导体衬底的程度和有被形成的集电极区域，在上表面侧结构和所述漂移区域中形成沟槽的研究，该晶体缺陷区阴极区域的集电极区域内上漂移区和它延伸如果其中x中㎛所述半导体基板的厚度，并且由y朝向所述集电极区域服装突出晶体缺陷区域的宽度的部分㎛的隔着衣服侧内的漂移区，，Y≥0.007x- 1.09x + 在这个实施例中，

摘要（英）：

Small and, also, provides a semiconductor device, the forward voltage of the diode is not changed by the gate potential well. In the range which is exposed on the upper surface of the semiconductor substrate, the anode region and the upper IGBT structure (the emitter region and the body region) it is formed, and therefore the boundary of the anode region and the upper IGBT structure extending the trench with a gate insulating film and the gate electrode, and , in the range which is exposed on the lower surface of the semiconductor substrate, and the cathode region and the collector region it is formed, when there is a drift region is formed between the side structure and the upper surface side structure, the crystal defect region and in the upper drift region of the cathode region and extends across the drift region within the image side of the collector region, when the portion of the thickness of the semiconductor substrate in x ㎛, and protrudes to the upper side of the collector region to the width of the crystal defect region by y ㎛, y ≥ 0.007x ² - a semiconductor device that satisfies the relationship of 1.09x + 126.

KR101802104B1 반도체 장치 公开/授权日：2017-11-27

Espacenet

H	电学
--H01	基本电气元件
----H01L	半导体器件；其他类目未包含的电固体器件
------H01L27/00	由在一个共用衬底内或其上形成的多个半导体或其他固态组件组成的器件
--------H01L27/02	.包括有专门适用于整流、振荡、放大或切换的半导体组件并且至少有一个电位跃变势垒或者表面势垒的；包括至少有一个跃变势垒或者表面势垒的无源集成电路单元的
----------H01L27/04	..其衬底为半导体的
------------H01L27/06	...在非重复结构中包括有多个单个组件的
--------------H01L27/07	....有源区共用的组件

发明公开 KR1020160096673A 반도체 장치 有权

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