基本信息:
- 专利标题： 박막 트랜지스터 및 그의 제조방법
- 专利标题（英）：Thin film transistor and method for fabricating the same
- 专利标题（中）：薄膜晶体管及其制造方法
- 申请号：KR1020140022292 申请日：2014-02-26
- 公开(公告)号：KR1020150101487A 公开(公告)日：2015-09-04
- 发明人： 정웅희 , 김선광 , 김현식 , 안병두 , 최천기
- 申请人： 삼성디스플레이 주식회사
- 申请人地址： 경기 용인시 기흥구 삼성로*(농서동)
- 专利权人： 삼성디스플레이 주식회사
- 当前专利权人： 삼성디스플레이 주식회사
- 当前专利权人地址： 경기 용인시 기흥구 삼성로*(농서동)
- 代理人： 강신섭; 문용호; 이용우
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L21/336
Embodiment of the present invention includes a thin film transistor, and to a method of manufacturing and flat panel display device having him, the thin film transistor includes a gate insulating layer, a gate electrode formed on the substrate including a gate electrode, a gate electrode formed on the substrate a gate insulating layer formed on the source region, the oxide semiconductor layer including a channel region and a drain region, an oxide is formed on the semiconductor layer with a carrier concentration lower than the oxide semiconductor layer oxide buffer layer, formed on the oxide buffer layer and the gate insulating layer and it includes a source electrode and a drain electrode connected to the oxide buffer layer on the source region and the drain region through the protective layer, and contact holes are formed contact holes so that the oxide buffer layer is exposed in the source and drain regions.
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L29/00 | 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件 |
| --------H01L29/02 | .按其半导体本体的特征区分的 |
| ----------H01L29/68 | ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的 |
| ------------H01L29/70 | ...双极器件 |
| --------------H01L29/762 | ....电荷转移器件 |
| ----------------H01L29/78 | .....由绝缘栅产生场效应的 |
| ------------------H01L29/786 | ......薄膜晶体管 |