基本信息:
- 专利标题: 박막 트랜지스터 및 그의 제조방법
- 专利标题(英):Thin film transistor and method for fabricating the same
- 专利标题(中):薄膜晶体管及其制造方法
- 申请号:KR1020140022292 申请日:2014-02-26
- 公开(公告)号:KR1020150101487A 公开(公告)日:2015-09-04
- 发明人: 정웅희 , 김선광 , 김현식 , 안병두 , 최천기
- 申请人: 삼성디스플레이 주식회사
- 申请人地址: 경기 용인시 기흥구 삼성로*(농서동)
- 专利权人: 삼성디스플레이 주식회사
- 当前专利权人: 삼성디스플레이 주식회사
- 当前专利权人地址: 경기 용인시 기흥구 삼성로*(농서동)
- 代理人: 강신섭; 문용호; 이용우
- 主分类号: H01L29/786
- IPC分类号: H01L29/786 ; H01L21/336
Embodiment of the present invention includes a thin film transistor, and to a method of manufacturing and flat panel display device having him, the thin film transistor includes a gate insulating layer, a gate electrode formed on the substrate including a gate electrode, a gate electrode formed on the substrate a gate insulating layer formed on the source region, the oxide semiconductor layer including a channel region and a drain region, an oxide is formed on the semiconductor layer with a carrier concentration lower than the oxide semiconductor layer oxide buffer layer, formed on the oxide buffer layer and the gate insulating layer and it includes a source electrode and a drain electrode connected to the oxide buffer layer on the source region and the drain region through the protective layer, and contact holes are formed contact holes so that the oxide buffer layer is exposed in the source and drain regions.