基本信息:
- 专利标题: 스핀 축적을 이용하여 스위치될 수 있고, 자기전기 장치들을 이용하여 선택 가능한 자기 메모리들을 제공하는 방법 및 시스템
- 专利标题(英):Method and system for providing magnetic memories switchable using spin accumulation and selectable using magnetoelectric devices
- 专利标题(中):用于提供可使用自旋累积切换并且可使用磁电装置选择的磁存储器的方法和系统
- 申请号:KR1020140100639 申请日:2014-08-05
- 公开(公告)号:KR1020150018413A 公开(公告)日:2015-02-23
- 发明人: 크발코브스키,알렉시바실예비히 , 아팔코브,드미트로 , 니키틴,블라디미르 , 크로운비,모하매드토우픽
- 申请人: 삼성전자주식회사
- 申请人地址: ***, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea
- 专利权人: 삼성전자주식회사
- 当前专利权人: 삼성전자주식회사
- 当前专利权人地址: ***, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea
- 代理人: 특허법인 고려
- 优先权: US14/097,492 2013-12-05; US61/863,835 2013-08-08
- 主分类号: G11C11/16
- IPC分类号: G11C11/16
The magnetic memory is described. In one aspect, the magnetic element is adjacent to said self-bonded with at least one self-bonding half-spin valves: include (semi-spin valve below SSV) line. Each of said magnetic junction comprises a magnetic free layer (magnetic free layer). The SSV line (s) comprises a non-magnetic (nonmagnetic) layer between the ferromagnetic (ferromagnetic) layer and the ferromagnetic layer and the magnetic bonding. The SSV line (s) consists of a substantially plane by the accumulation of the spin-polarized current from the current carrier in the inside (in-plane) so that the torque due to the spin accumulation on at least a portion of the magnetic joint. It said free layer is configured to be written using the spin torque by at least accumulation. In another aspect, the magnetic element is at least one of the spin torque is similar to the magnetic memory cells and the SSV Line: include (spin torque ST) line. Each magnetic memory cell includes a magnetic (s), self-bonded, similar to the joint and electrical magnetic (magnetoelectric) selection device (s) described above.
公开/授权文献:
信息查询:
EspacenetIPC结构图谱:
G11C11/56 | 组优先于G11C11/02至G11C11/54中各组。 |
--G11C11/02 | .应用磁性元件的 |
----G11C11/16 | ..应用磁自旋效应的存储元件的 |