基本信息:
- 专利标题: SOI 웨이퍼의 제조방법
- 专利标题(英):Method for manufacturing soi wafer
- 专利标题(中):SOI WAFER制造方法
- 申请号:KR1020147031656 申请日:2013-04-19
- 公开(公告)号:KR1020150013164A 公开(公告)日:2015-02-04
- 发明人: 아가,히로지 , 이시즈카,토루
- 申请人: 신에쯔 한도타이 가부시키가이샤
- 申请人地址: *-*, Ohtemachi *-chome, Chiyoda-ku, Tokyo, Japan
- 专利权人: 신에쯔 한도타이 가부시키가이샤
- 当前专利权人: 신에쯔 한도타이 가부시키가이샤
- 当前专利权人地址: *-*, Ohtemachi *-chome, Chiyoda-ku, Tokyo, Japan
- 代理人: 특허법인씨엔에스
- 优先权: JPJP-P-2012-119066 2012-05-24
- 国际申请: PCT/JP2013/002651 2013-04-19
- 国际公布: WO2013175705 2013-11-28
- 主分类号: H01L27/12
- IPC分类号: H01L27/12 ; H01L21/31 ; H01L21/306
The present invention, an insulating film is formed on the entire surface of at least a base wafer, a bonded wafer prior to peeling the bond wafer at the ion implantation layer, and a protective insulating film on the back surface, opposite to the junction surface of the base wafer, and possible insulating film dissolved a method of manufacturing the SOI wafer having the step of etching by contact with liquid or to expose the insulating film to the soluble gas, the insulating layer disposed between the bond wafer and the base wafer, and toward the center from the peripheral edge of the bonded wafer. Accordingly, when forming an insulating film on the base wafer to be bonded, and control the terrace width, with the SOI prevents occurrence degrees, the manufacturing method of the SOI wafer warpage can be suppressed in the SOI wafer is provided.
公开/授权文献:
- KR101914755B1 SOI 웨이퍼의 제조방법 公开/授权日:2018-11-05