基本信息:
- 专利标题： 박막증착장치
- 专利标题（英）：Thin film deposition apparatus
- 专利标题（中）：薄膜沉积装置
- 申请号：KR1020130077571 申请日：2013-07-03
- 公开(公告)号：KR1020150004542A 公开(公告)日：2015-01-13
- 发明人： 심우필 , 김재환
- 申请人： 주식회사 테스
- 申请人地址： 경기도 용인시 처인구 양지면 중부대로 ****-**
- 专利权人： 주식회사 테스
- 当前专利权人： 주식회사 테스
- 当前专利权人地址： 경기도 용인시 처인구 양지면 중부대로 ****-**
- 代理人： 김준현; 서현; 이재홍; 민복기
- 主分类号： H01L21/205
- IPC分类号： H01L21/205
The present invention relates to a film deposition apparatus. The film deposition apparatus according to the present invention comprises a process gas supply channel which is provided in the chamber, the chamber having a deposition space therein supplying a process gas toward the substrate support and the substrate in which the substrate is mounted, the process gas supply channel in having a lower opening through which the process gas injected into the substrate inlet and the top is closed it is provided between the two or more active channels which activates the process gas provided next to each other, of the neighboring two or more active channels It characterized by comprising a gas supply comprising a gas activation unit for activating the process gas in each of the active channels.
公开/授权文献:
- KR101488672B1 박막증착장치 公开/授权日：2015-02-04
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/20 | ....半导体材料在基片上的沉积，例如外延生长 |
| ----------------H01L21/205 | .....应用气态化合物的还原或分解产生固态凝结物的，即化学沉积 |