基本信息:
- 专利标题： 마스크 블랭크, 전사용 마스크, 및 반도체 디바이스의 제조 방법
- 专利标题（英）：Mask blank, transfer mask and manufacturing method of semiconductor device
- 专利标题（中）：屏蔽层，半导体器件的传输掩模和制造方法
- 申请号：KR1020120098789 申请日：2012-09-06
- 公开(公告)号：KR1020130027440A 公开(公告)日：2013-03-15
- 发明人： 시시도히로아끼 , 노자와오사무 , 고미나또아쯔시
- 申请人： 호야 가부시키가이샤
- 申请人地址： *-**-*, Nishi-Shinjuku, Shinjuku-ku, Tokyo, Japan
- 专利权人： 호야 가부시키가이샤
- 当前专利权人： 호야 가부시키가이샤
- 当前专利权人地址： *-**-*, Nishi-Shinjuku, Shinjuku-ku, Tokyo, Japan
- 代理人： 양영준; 이중희
- 优先权： JPJP-P-2011-195078 2011-09-07
- 主分类号： G03F1/38
- IPC分类号： G03F1/38 ; G03F7/26 ; H01L21/027
摘要：
PURPOSE: A mask blank, a transcription, and a manufacturing method of a semiconductor device are provided to minimize the degradation of flatness after manufacturing the semiconductor device. CONSTITUTION: A mask black is formed by forming a thin film on the main surface of a glass plate(1). The thin film is formed of a material which contains a tantalum and does not substantially contain hydrogen. A penetration preventing film(6) prevent the hydrogen from penetrating from the glass plate to the thin film. The penetration prevention film is formed of a material which contains oxygen and tantalum.
摘要（中）：
目的：提供半导体器件的掩模空白，转录和制造方法，以在半导体器件制造之后使平坦度的劣化最小化。 构成：通过在玻璃板（1）的主表面上形成薄膜来形成掩模黑色。 薄膜由含有钽并且基本上不含氢的材料形成。 防渗透膜（6）防止氢气从玻璃板穿透到薄膜。 防渗透膜由含有氧和钽的材料形成。
公开/授权文献:
- KR101925644B1 마스크 블랭크, 전사용 마스크, 및 반도체 디바이스의 제조 방법 公开/授权日：2018-12-05