基本信息:
- 专利标题: 레지스트 조성물 및 레지스트 패턴의 제조 방법
- 专利标题(英):Resist composition and method for producing resist pattern
- 专利标题(中):耐蚀组合物及其制造方法
- 申请号:KR1020120035937 申请日:2012-04-06
- 公开(公告)号:KR1020120115137A 公开(公告)日:2012-10-17
- 发明人: 이찌까와,고지 , 야스에,다까히로 , 야마구찌,사또시
- 申请人: 스미또모 가가꾸 가부시키가이샤
- 申请人地址: **-*, Shinkawa *-chome, Chuo-ku, Tokyo, Japan
- 专利权人: 스미또모 가가꾸 가부시키가이샤
- 当前专利权人: 스미또모 가가꾸 가부시키가이샤
- 当前专利权人地址: **-*, Shinkawa *-chome, Chuo-ku, Tokyo, Japan
- 代理人: 장수길; 이석재
- 优先权: JPJP-P-2011-085016 2011-04-07
- 主分类号: G03F7/038
- IPC分类号: G03F7/038 ; G03F7/004
摘要:
PURPOSE: A resist composition and a resist pattern manufacturing method using the same are provided to achieve wide depth of focus in resist patterns. CONSTITUTION: A resist composition includes a resin, an acid generator represented by chemical formula II, and a compound represented by chemical formula I. The resin is insoluble or hardly soluble to an alkali aqueous solution and becomes soluble to the alkali aqueous solution by the action of acid. In chemical formula I, R1 and R2 are respectively C1-C12 hydrocarbon groups, C1-C6 alkoxy groups, C2-C7 acyl groups, C2-C7 acyloxy groups, C2-C7 alkoxycarbonyl groups, nitro groups, or halogen atoms; and m and n are the integer of 0 to 4, respectively. In chemical formula II, Q1 and Q2 are respectively fluorine atoms or C1-C6 perfluoroalkyl groups; L1 is *-CO-O-L or *-CH2-O-L, and * is a bond to -CQ1Q2; La and Lb are respectively C1-C15 divalent saturated hydrocarbon groups, and one or more -CH_2- in the divalent hydrocarbon groups are substitutable with -O- or -CO-; a cyclic W1 is a C2-C36 heterocyclic group; and Z+ is an organic cation.
摘要(中):
目的:提供抗蚀剂组合物和使用其的抗蚀剂图案制造方法以在抗蚀剂图案中实现宽的聚焦深度。 构成:抗蚀剂组合物包括树脂,由化学式II表示的酸产生剂和由化学式I表示的化合物。该树脂不溶于或几乎不溶于碱性水溶液,并通过作用而溶于碱性水溶液 的酸。 在化学式I中,R1和R2分别为C1-C12烃基,C1-C6烷氧基,C2-C7酰基,C2-C7酰氧基,C2-C7烷氧基羰基,硝基或卤原子; m和n分别为0〜4的整数。 在化学式II中,Q1和Q2分别是氟原子或C1-C6全氟烷基; L1是* -CO-O-L或* -CH2-O-L,*是与-CQ1Q2的键; La和Lb分别为C 1 -C 15二价饱和烃基,二价烃基中的一个或多个-CH 2 - 可以被-O-或-CO-取代; 环状W1是C2-C36杂环基; Z +是有机阳离子。
公开/授权文献:
- KR101897288B1 레지스트 조성물 및 레지스트 패턴의 제조 방법 公开/授权日:2018-09-11