基本信息:
- 专利标题: 포토레지스트 시뮬레이션
- 专利标题(英):Photoresist simulation
- 专利标题(中):光电子模拟
- 申请号:KR1020127013240 申请日:2010-11-09
- 公开(公告)号:KR1020120085841A 公开(公告)日:2012-08-01
- 发明人: 비아포레존제이 , 스미스마크디 , 그레이브스존에스 , 블랑켄십데이비드
- 申请人: 케이엘에이-텐코 코포레이션
- 申请人地址: One Technology Drive, Milpitas, CA *****, U.S.A.
- 专利权人: 케이엘에이-텐코 코포레이션
- 当前专利权人: 케이엘에이-텐코 코포레이션
- 当前专利权人地址: One Technology Drive, Milpitas, CA *****, U.S.A.
- 代理人: 김태홍; 김성기
- 优先权: US12/915,455 2010-10-29; US61/260,533 2009-11-12
- 国际申请: PCT/US2010/055937 2010-11-09
- 国际公布: WO2011059947 2011-05-19
- 主分类号: H01L21/66
- IPC分类号: H01L21/66 ; H01L21/027
A processor-based method for measuring the dimensional characteristics of the photoresist profile, said methods comprising: determining the number of the acid generator (acid generator) and a quencher (quencher) within the photoresist volume, picture photon that is absorbed by the resist volume determining a number of, determining a number of the acid generator to be converted into the acid (acid), calculating a development of the picture step, the photoresist volume to determine the number of acid and quencher reaction in the resist volume, picture generating a simulated three-dimensional scanning electron microscope image of the photo-resist profiles produced by the developed resist volume to a processor, and the picture measuring the dimensional characteristics of the resist profile.
公开/授权文献:
- KR101454522B1 포토레지스트 시뮬레이션 公开/授权日:2014-10-24