基本信息:
- 专利标题： 원자층 퇴적 장치
- 专利标题（英）：Atomic layer deposition apparatus
- 专利标题（中）：原子层沉积装置
- 申请号：KR1020117023446 申请日：2010-02-15
- 公开(公告)号：KR1020110131268A 公开(公告)日：2011-12-06
- 发明人： 타치바나히로유키 , 무라타카즈토시 , 미야타케나오마사 , 모리야스나리
- 申请人： 미쯔이 죠센 가부시키가이샤
- 申请人地址： 일본 도쿄도 쥬오쿠 쯔키지 *죠메 *반 *고
- 专利权人： 미쯔이 죠센 가부시키가이샤
- 当前专利权人： 미쯔이 죠센 가부시키가이샤
- 当前专利权人地址： 일본 도쿄도 쥬오쿠 쯔키지 *죠메 *반 *고
- 代理人： 김성호
- 优先权： JPJP-P-2009-056620 2009-03-10
- 国际申请： PCT/JP2010/000911 2010-02-15
- 国际公布： WO2010103732 2010-09-16
- 主分类号： H01L21/205
- IPC分类号： H01L21/205
And atomic layer deposition apparatus for forming a thin film on a substrate, a first vessel 1 having an inner space, are installed in the interior of the first container, the second container of the tubular (筒 形狀) defining an interior space, and , the second towards the inner space, one end of the tubular to the first opening (開口) the raw material gas flows to form a thin film on the substrate and a second container having a (一端), a raw material gas, the first opening 2 provided with a gas supply port for supplying the interior space, and further, the pressing member which, by being in the longitudinal direction of the tubular shape of the second container presses the second container, isolated a second internal space with respect to the first inner space via have.
公开/授权文献:
- KR101305298B1 원자층 퇴적 장치 公开/授权日：2013-09-06
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/20 | ....半导体材料在基片上的沉积，例如外延生长 |
| ----------------H01L21/205 | .....应用气态化合物的还原或分解产生固态凝结物的，即化学沉积 |