基本信息:
- 专利标题： 포토레지스트 조성물, 이를 이용한 패턴의 형성방법 및 반도체 장치의 제조방법
- 专利标题（英）：Photoresist composition, method of forming a pattern and method of manufacturing a semiconductor device using the photoresist composition
- 专利标题（中）：光刻胶组合物，形成图案的方法和使用光刻胶组合物制造半导体器件的方法
- 申请号：KR1020090116217 申请日：2009-11-27
- 公开(公告)号：KR1020110059471A 公开(公告)日：2011-06-02
- 发明人： 김경미 , 김영호
- 申请人： 삼성전자주식회사
- 申请人地址： ***, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea
- 专利权人： 삼성전자주식회사
- 当前专利权人： 삼성전자주식회사
- 当前专利权人地址： ***, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea
- 代理人： 박영우
- 主分类号： G03F7/075
- IPC分类号： G03F7/075 ; H01L21/027
摘要：
PURPOSE: A photoresist composition is provided to form patterns with an improved pattern profile and corrosion resistance. CONSTITUTION: A photoresist composition comprises (a) a polymer including first repeating units represented by chemical formulas 1-5 containing a diazoketo group and second repeating units represented by chemical formula 6 or 7 containing a silicon-containing group, and (b) a solvent. A method for preparing the patterns comprises the steps of: applying the photoresist film on a substrate to form a photoresist film; selectively exposing the photoresist film using a light source; developing the exposed photoresist film to form photoresist patterns.
摘要（中）：
目的：提供光致抗蚀剂组合物以形成具有改进的图案轮廓和耐腐蚀性的图案。 构成：光致抗蚀剂组合物包含（a）包含由含有二唑酮基的化学式1-5表示的第一重复单元和含有含硅基团的化学式6或7表示的第二重复单元的聚合物，（b）溶剂 。 制备图案的方法包括以下步骤：将光致抗蚀剂膜施加在基底上以形成光致抗蚀剂膜; 使用光源选择性地曝光光致抗蚀剂膜; 显影曝光的光致抗蚀剂膜以形成光致抗蚀剂图案。