PURPOSE: A semiconductor memory device provided with a dual port is provided to improve the electrical characteristics of the semiconductor memory device by increasing the noise margin in comparison with the semiconductor memory device. CONSTITUTION: A semiconductor memory device provided with a dual port includes a semiconductor substrate provided with a plurality of memory cells, a word line and scan address line, a pair of bitlines and a scan data outline. Each of the memory cells is provided with a first CMOS inverter, a second CMOS inverter, a third NMOS transistor(N3), a fourth NMOS transistor(N4) and a third PMOS transistor(P3). The first CMOS inverter includes a first NMOS transistor(N1), a first PMOS transistor(P1), an input terminal and an output transistor. The second CMOS inverter includes a second NMOS transistor(N2), a second PMOS transistor(P2), an input terminal and an output terminal. The gate of the third NMOS transistor(N3) is connected to the word line, the drain of the third NMOS transistor(N3) is connected to the bitline and the source of the third NMOS transistor(N3) is connected to the second memory node. The gate of the fourth NMOS transistor(N4) is connected to the word line, the drain of the fourth NMOS transistor(N4) is connected to the complementary bitline and the source of the fourth NMOS transistor(N4) is connected to the second memory node. And, the gate of the third PMOS transistor(P3) is connected to the scan address line and the source of the third PMOS transistor(P3) is connected to the second memory node.