Convert other increases the light extraction efficiency from the LED. As convert other LED for the design wavelength λ, a reflective electrode layer and a metal layer, a p-type GaN contact layer, and a transparent p-type AlGaN layer for the wavelength (λ), a multi-quantum barrier layer, or electron blocking layer, a barrier layer, a quantum has a well layer in this order from the side opposite to the substrate, is less than the thickness of the p-type AlGaN layer 100nm, and at least the p-type GaN contact layer and an interface between the p-type AlGaN layer, wherein in the substrate direction reflection type photonic crystal having a periodic structure, the distance is the barrier layer and the multiple quantum to the quantum well layers from the direction of the substrate cross section of the public with a plurality of the public provided with the p-type AlGaN layer in the range of not exceeding the thickness direction a barrier layer within 80nm film over the total value of the thickness of the (or the electron block layer), and its depth (h) the maximum value of light-extraction efficiency within the total value of the thickness of the p-type AlGaN layer and the p-type GaN contact layer Obtained and, also the reflection-type photonic crystal periodic structure TE has a photonic band gap that will open for the polarized light components, the period (a) the Bragg conditions of the photonic crystal periodic structure for light of the design wavelength (λ) the order (m) in the Bragg condition is satisfied while satisfying 1≤m≤5, and convert other, characterized in that to satisfy the R / is a photonic band gap when the radius of the public by R is a maximum LED.