基本信息:
- 专利标题: 반도체 장치의 제조 방법, 기판 처리 방법 및 기판 처리 장치
- 专利标题(英):Method of manufacturing semiconductor device, method of processing substrate, and substrate processing apparatus
- 申请号:KR1020140008214 申请日:2014-01-23
- 公开(公告)号:KR101454603B1 公开(公告)日:2014-11-04
- 发明人: 히로세요시로 , 타카사와유신 , 카마쿠라츠카사 , 나카무라요시노부 , 사사지마료타
- 申请人: 가부시키가이샤 히다치 고쿠사이 덴키
- 申请人地址: **-**, Nishi-shimbashi *-chome, Minato-ku, Tokyo, Japan
- 专利权人: 가부시키가이샤 히다치 고쿠사이 덴키
- 当前专利权人: 가부시키가이샤 히다치 고쿠사이 덴키
- 当前专利权人地址: **-**, Nishi-shimbashi *-chome, Minato-ku, Tokyo, Japan
- 代理人: 이창범; 박준용
- 优先权: JPJP-P-2010-091327 2010-04-12; JPJP-P-2010-280421 2010-12-16
- 主分类号: H01L21/205
- IPC分类号: H01L21/205
To form a low dielectric constant, a low etching rate, the insulating layer having the properties of high insulation. Process for supplying a gas containing a predetermined element into the processing chamber accommodating the substrate; A step of supplying a carbon-containing gas into the processing chamber accommodating the substrate; A step of supplying a nitrogen-containing gas into the processing chamber accommodating the substrate; Predetermined by the cycle to perform at the same time ratio (非) it performed a predetermined number of times, and a step of forming a xanthan nitride film on the substrate; and a step of supplying an oxygen-containing gas into the processing chamber accommodating the substrate element-containing gas, the carbon-containing gas, said nitrogen containing gas and the step of supplying a gas from the oxygen-containing gas, wherein in said predetermined element-containing gas, the carbon-containing gas, said nitrogen containing gas and the oxygen-containing gas a gas other than a gas in a ratio (非) fed into the treatment chamber and, in the process for supplying the oxygen-containing gas, the oxidation by the oxygen-containing gas in the layer formed on the substrate up to that point where the unsaturated under a condition, a method for manufacturing a semiconductor device to oxidize the layer is provided.
公开/授权文献:
- KR1020140022445A 반도체 장치의 제조 방법, 기판 처리 방법 및 기판 처리 장치 公开/授权日:2014-02-24