基本信息:
- 专利标题： Magnetoresistive element and magnetic memory
- 专利标题（中）：磁性元件和磁记忆
- 申请号：JP2007094886 申请日：2007-03-30
- 公开(公告)号：JP2008252036A 公开(公告)日：2008-10-16
- 发明人： KITAGAWA EIJI , YOSHIKAWA MASAHISA , KISHI TATSUYA , YODA HIROAKI
- 申请人： Toshiba Corp , 株式会社東芝
- 专利权人： Toshiba Corp,株式会社東芝
- 当前专利权人： Toshiba Corp,株式会社東芝
- 优先权： JP2007094886 2007-03-30
- 主分类号： H01L43/08
- IPC分类号： H01L43/08 ; H01L21/8246 ; H01L27/105
摘要：
PROBLEM TO BE SOLVED: To reduce further current density required for magnetization reversal.
SOLUTION: A magnetoresistive element 10 includes a first free layer 15 in which a direction of magnetization changes by action of electrons with spin polarized; a second free layer 13 in which the direction of the magnetization changes by the action of the electrons with the spin polarized; a fixed layer 11 in which the direction of the magnetization is fixed; a first nonmagnetic layer 14 provided between the first free layer 15 and the second free layer 13; and a second nonmagnetic layer 12 provided between the second free layer 13 and the fixed layer 11. The relation between a product Ku1×V1 of a magnetic anisotropy constant Ku1 and activation volume V1 of the first free layer 15, and a product Ku2×V2 of a magnetic anisotropy constant Ku2 and activation volume V2 of the second free layer 13 satisfies Ku1×V1>Ku2×V2.
COPYRIGHT: (C)2009,JPO&INPIT
摘要（中）：
SOLUTION: A magnetoresistive element 10 includes a first free layer 15 in which a direction of magnetization changes by action of electrons with spin polarized; a second free layer 13 in which the direction of the magnetization changes by the action of the electrons with the spin polarized; a fixed layer 11 in which the direction of the magnetization is fixed; a first nonmagnetic layer 14 provided between the first free layer 15 and the second free layer 13; and a second nonmagnetic layer 12 provided between the second free layer 13 and the fixed layer 11. The relation between a product Ku1×V1 of a magnetic anisotropy constant Ku1 and activation volume V1 of the first free layer 15, and a product Ku2×V2 of a magnetic anisotropy constant Ku2 and activation volume V2 of the second free layer 13 satisfies Ku1×V1>Ku2×V2.
COPYRIGHT: (C)2009,JPO&INPIT
要解决的问题：为了减少磁化反转所需的进一步的电流密度。 解决方案：磁阻元件10包括第一自由层15，其中磁化方向随着具有自旋极化的电子的作用而改变; 第二自由层13，其中磁化方向由具有自旋极化的电子的作用而变化; 固定层11，其中固定磁化方向; 设置在第一自由层15和第二自由层13之间的第一非磁性层14; 以及设置在第二自由层13和固定层11之间的第二非磁性层12.将磁各向异性常数Ku1的乘积Ku1×V1与第一自由层15的激活体积V1与乘积Ku2×V2 第二自由层13的磁各向异性常数Ku2和活化体积V2满足Ku1×V1> Ku2×V2。 版权所有（C）2009，JPO＆INPIT
公开/授权文献:
- JP4970113B2 Magneto-resistive element and a magnetic memory 公开/授权日：2012-07-04
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L43/00 | 应用电—磁或者类似磁效应的器件；专门适用于制造或处理这些器件或其部件的方法或设备 |
| --------H01L43/08 | .磁场控制的电阻器 |