基本信息:
- 专利标题: Heat treatment apparatus and heat treatment method
- 专利标题(中):热处理设备和热处理方法
- 申请号:JP2005158471 申请日:2005-05-31
- 公开(公告)号:JP2006339188A 公开(公告)日:2006-12-14
- 发明人: FUJII SATOSHI , ISHIZU HIDEO , ISHIHARA SHOJI
- 申请人: Kokusai Electric Semiconductor Service Inc , 株式会社国際電気セミコンダクターサービス
- 专利权人: Kokusai Electric Semiconductor Service Inc,株式会社国際電気セミコンダクターサービス
- 当前专利权人: Kokusai Electric Semiconductor Service Inc,株式会社国際電気セミコンダクターサービス
- 优先权: JP2005158471 2005-05-31
- 主分类号: H01L21/683
- IPC分类号: H01L21/683 ; H01L21/26
摘要:
PROBLEM TO BE SOLVED: To improve sealing performance of a heating container with less contamination of a wafer. SOLUTION: A heat treatment apparatus is provided with a heating container 100 of a hermetically sealed structure consisting of a cylindrical side wall 110, an upper wall 120 and a bottom wall 130; a substrate holding means 500 for holding a wafer W to be housed in the heating container 100; and a lamp unit 200 for heating the wafer W while transmitting the upper wall 120 of the heating container 100. The apparatus is provided with a cylindrical external rotor 300 provided on the external periphery of the heating container 100 and rotating around a vertical axis of the heating container 100; a cylindrical internal rotor 400 provided on the internal periphery of the heating container 100 and allowing the substrate holding means 500 to rotate concentrically with the external rotor 300; a magnetic coupling means 600 for magnetically coupling the external and internal rotors 300 and 400 via the side wall 110 of the heating container 100, and transmitting the rotary movement of the external rotor 300 to the internal rotor 400 to rotate the substrate holding means 500; and a gas bearing 1000 for supplying a gas to the internal rotor 400, and utilizing the pressure of the gas to allow the internal rotor 400 to flow and be supported. COPYRIGHT: (C)2007,JPO&INPIT
摘要(中):
要解决的问题:提高具有较少的晶片污染的加热容器的密封性能。 解决方案:热处理设备设置有由圆柱形侧壁110,上壁120和底壁130组成的密封结构的加热容器100; 用于保持容纳在加热容器100中的晶片W的基板保持装置500; 以及用于在传送加热容器100的上壁120的同时加热晶片W的灯单元200.该设备设置有设置在加热容器100的外周上的圆筒形外转子300, 加热容器100; 设置在加热容器100的内周上并允许基板保持装置500与外转子300同心旋转的圆柱形内转子400; 用于经由加热容器100的侧壁110磁耦合外部和内部转子300和400并将外部转子300的旋转运动传递到内部转子400以旋转基板保持装置500的磁耦合装置600; 以及用于向内转子400供给气体的气体轴承1000,利用气体的压力使内转子400流动并被支撑。 版权所有(C)2007,JPO&INPIT
公开/授权文献:
- JP4611118B2 Heat treatment apparatus and heat treatment method 公开/授权日:2011-01-12