基本信息:
- 专利标题： Semiconductor device
- 专利标题（中）：半导体器件
- 申请号：JP2004371056 申请日：2004-12-22
- 公开(公告)号：JP2006179664A 公开(公告)日：2006-07-06
- 发明人： ONO SHOTARO , KAWAGUCHI YUSUKE , YAMAGUCHI YOSHIHIRO , MATSUKI HIROFUMI , ARAI KIYOTAKA
- 申请人： Toshiba Corp , 株式会社東芝
- 专利权人： Toshiba Corp,株式会社東芝
- 当前专利权人： Toshiba Corp,株式会社東芝
- 优先权： JP2004371056 2004-12-22
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
PROBLEM TO BE SOLVED: To improve avalanche resistance after reducing ON resistance in a semiconductor device such as a power MOSFET with a trench gate structure.
SOLUTION: A power MOSFET 21 has an n-type drift layer 10 and a p-type base layer 11 laminated and formed thereon. A trench gate 17 is formed to get at the n-type drift layer 10 passing through the p-type base layer 11. An n
+ -type source region 18 and a p
+ -type region 19 are formed on the p-type base layer 11. They are adjacently disposed alternately along a longitudinal direction of the trench gate 17. The n
+ -type source region 18 and the p
+ -type region 19 are disposed to intersect with each other having an inclination to the longitudinal direction of the trench gate 17.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要（中）：
SOLUTION: A power MOSFET 21 has an n-type drift layer 10 and a p-type base layer 11 laminated and formed thereon. A trench gate 17 is formed to get at the n-type drift layer 10 passing through the p-type base layer 11. An n
+ -type source region 18 and a p
+ -type region 19 are formed on the p-type base layer 11. They are adjacently disposed alternately along a longitudinal direction of the trench gate 17. The n
+ -type source region 18 and the p
+ -type region 19 are disposed to intersect with each other having an inclination to the longitudinal direction of the trench gate 17.
COPYRIGHT: (C)2006,JPO&NCIPI
要解决的问题：在具有沟槽栅极结构的诸如功率MOSFET的半导体器件中降低导通电阻之后提高雪崩阻力。 解决方案：功率MOSFET21具有层叠并形成在其上的n型漂移层10和p型基极层11。 形成沟槽栅极17以便在通过p型基极层11的n型漂移层10处获得.n + SP / SP型源极区域18和ap 型区域19形成在p型基极层11上。它们沿着沟槽栅极17的纵向相互交替布置.n + SP +型源区域18和p < SP> + 型区域19设置成相对于沟槽栅极17的纵向具有倾斜度相互交叉。（C）2006，JPO和NCIPI
公开/授权文献:
- JP4212552B2 Semiconductor device 公开/授权日：2009-01-21
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L29/00 | 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件 |
| --------H01L29/02 | .按其半导体本体的特征区分的 |
| ----------H01L29/68 | ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的 |
| ------------H01L29/70 | ...双极器件 |
| --------------H01L29/762 | ....电荷转移器件 |
| ----------------H01L29/78 | .....由绝缘栅产生场效应的 |