发明专利
JP2004004614A PHOTOACID GENERATOR FOR CHEMICALLY AMPLIFIED RESIST MATERIAL, AND RESIST MATERIAL USING THE SAME AND PATTERN FORMING METHOD
审中-公开
基本信息:
- 专利标题： PHOTOACID GENERATOR FOR CHEMICALLY AMPLIFIED RESIST MATERIAL, AND RESIST MATERIAL USING THE SAME AND PATTERN FORMING METHOD
- 申请号：JP2003071473 申请日：2003-03-17
- 公开(公告)号：JP2004004614A 公开(公告)日：2004-01-08
- 发明人： OSAWA YOICHI , KOBAYASHI KATSUHIRO , TAKEMURA KATSUYA , TSUCHIYA JUNJI , MAEDA KAZUNORI
- 申请人： SHINETSU CHEMICAL CO
- 专利权人： SHINETSU CHEMICAL CO
- 当前专利权人： SHINETSU CHEMICAL CO
- 优先权： JP2003071473 2003-03-17; JP2002080649 2002-03-22
- 主分类号： G03F7/004
- IPC分类号： G03F7/004 ; C07C309/73 ; C08F12/22 ; C09K3/00
摘要：
PROBLEM TO BE SOLVED: To provide a photoacid generator for a chemically amplified resist material used for the chemically amplified resist material, the material being sensitive to radiations such as ultraviolet rays, far ultraviolet rays, electron beams, X-rays, excimer lasers, γ rays, and synchrotron radiations and being for forming integrated circuits, a resist material containing the photoacid generator for the chemically amplified resist material and a pattern forming metjhod using the same. SOLUTION: The photoacid generator for the chemically amplified resist material is expressed by general formula (1) (where R is H, F, Cl, NO 2 , alkyl group, or alkoxy group; n is 0 or 1; m is 1 or 2; r is 0 to 4; r' is 0 to 5; k is 0 to 4; G' and G" each denote sulfur atoms or -CH=CH- and do not simultaneously denote the sulfur atoms). The photoacid generator of an O-arylsulfonyl-oxime compound and the chemically amplified resist material using the same have excellent resolution and focus latitude, and have little variation in line widths and little deterioration in shapes even on long-term PED, are excellent in the pattern profile shape after development, have the high resolution suitable for microfabrication, especially by far ultraviolet lithography. COPYRIGHT: (C)2004,JPO