基本信息:
- 专利标题： Method of producing a resin molded semiconductor device
- 专利标题（中）：Verfahren zur Herstellung einer Halbleitervorrichtung aus Formharz
- 申请号：EP13001109.1 申请日：2013-03-05
- 公开(公告)号：EP2639822A2 公开(公告)日：2013-09-18
- 发明人： Shiobara, Toshio , Sekiguchi, Susumu , Akiba, Hideki
- 申请人： Shin-Etsu Chemical Co., Ltd.
- 申请人地址： 6-1, Otemachi 2-chome Chiyoda-ku, Tokyo JP
- 专利权人： Shin-Etsu Chemical Co., Ltd.
- 当前专利权人： Shin-Etsu Chemical Co., Ltd.
- 当前专利权人地址： 6-1, Otemachi 2-chome Chiyoda-ku, Tokyo JP
- 代理机构： Wibbelmann, Jobst
- 优先权： JP2012056202 20120313
- 主分类号： H01L21/56
- IPC分类号： H01L21/56
摘要：
It is an obj ect of the present invention to provide a method for producing a semiconductor apparatus in which the warp and break of a substrate after sealing can be suppressed even when a large substrate is sealed. The present invention provides a method for producing a semiconductor apparatus with a mold including an upper mold half and a lower mold half, including:
an arranging step of arranging on one of the upper mold half and the lower mold half of the mold a substrate on which a semiconductor device is mounted, the mold being kept at a room temperature or heated to a temperature up to 200°C, and arranging on the other of the upper mold half and the lower mold half a substrate on which no semiconductor device is mounted;
an integrating step of integrating the substrate on which the semiconductor device is mounted and the substrate on which no semiconductor device is mounted by molding a thermosetting resin with the mold on which the substrates are arranged; and
a step of dicing the integrated substrates taken out of the mold to obtain an individualized semiconductor apparatus.
摘要（中）：
an arranging step of arranging on one of the upper mold half and the lower mold half of the mold a substrate on which a semiconductor device is mounted, the mold being kept at a room temperature or heated to a temperature up to 200°C, and arranging on the other of the upper mold half and the lower mold half a substrate on which no semiconductor device is mounted;
an integrating step of integrating the substrate on which the semiconductor device is mounted and the substrate on which no semiconductor device is mounted by molding a thermosetting resin with the mold on which the substrates are arranged; and
a step of dicing the integrated substrates taken out of the mold to obtain an individualized semiconductor apparatus.
本发明的目的是提供一种半导体装置的制造方法，其中即使在大的基板被密封时也能够抑制密封后的基板的翘曲和断裂。 本发明提供一种具有模具的半导体装置的制造方法，所述模具具有上半模和下半模，该模具包括：将模具的上半模和下半模的一个上设置在基板上的布置步骤 安装半导体器件，将模具保持在室温或加热至高达200℃的温度，并且在上半模和下半模的另一个上设置半个没有安装半导体器件的基板 ; 通过在其上配置有基板的模具上模制热固性树脂来整合其上安装有半导体器件的基板和不安装半导体器件的基板的积分步骤; 以及将从模具取出的集成基板切割以获得单独的半导体装置的步骤。
公开/授权文献:
- EP2639822A3 Method of producing a resin molded semiconductor device 公开/授权日：2015-06-24
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/50 | ...应用H01L21/06至H01L21/326中的任一小组都不包含的方法或设备组装半导体器件的 |
| --------------H01L21/56 | ....封装，例如密封层、涂层 |