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1. 发明申请

WO2023073060A1 METHOD OF IMPLANTING ATOMS IN A SUBSTRATE AND METHOD OF FORMING A QUANTUM REGISTER 审中-公开
公开(公告)号：WO2023073060A1
公开(公告)日：2023-05-04
申请号：PCT/EP2022/080005
申请日：2022-10-26
申请人： UNIVERSITAET ULM , UNIVERSITAET LEIPZIG
发明人： PLENIO, Martin Bodo , BAEUERLE, Peter , MENA OSTERITZ, Elena , KREUZER, Franziska , MEIJER, Jan
IPC分类号： C30B29/04 , C23C14/48 , B82Y10/00 , G06N10/40 , H01L21/265 , C30B29/36 , C30B31/22 , C30B33/04 , C30B29/06
摘要： A methods of implanting atoms into a substrate, wherein the atoms are at least some of the constituent atoms of a molecule and wherein the molecule comprises one or more colour centre atom(s) and one or more satellite atom(s). In come embodiments, the molecule comprises not more than three colour centre atoms of the same element of the group. In some embodiments, the molecule comprises one or more colour centre atom(s) other than N, on other embodiments, the molecule comprises at least 6 satellite atoms of N. In some embodiments, the molecule comprises one or more satellite atoms other than 13C. A method of manufacturing a quantum register comprising a colour centre and at least one nuclear spin isotope atom in a substrate, wherein the colour centre of the quantum register is a colour centre formed by a colour centre atom implanted into the substrate according to one of the above methods. A quantum register comprising such colour centre and at least one nuclear spin isotope atom in a substrate. Finally, a use of a molecule that comprises one or more colour centre atom(s) and one or more satellite atom(s) for the manufacture of a quantum register.

2. 发明申请

WO2022224929A1 積層薄膜とその製造方法审中-公开
公开(公告)号：WO2022224929A1
公开(公告)日：2022-10-27
申请号：PCT/JP2022/018019
申请日：2022-04-18
申请人：株式会社シンクロン , 学校法人東海大学
发明人：室谷　裕志 , 松平　学幸
IPC分类号： C23C14/06 , C23C14/08 , C23C14/10 , C23C14/24 , C23C14/34 , C23C14/48 , C23C14/54
摘要：所定の材料からなり、屈折率がｎ１の第１の薄膜層と、前記所定の材料からなり、屈折率がｎ２（ただし、ｎ２＜ｎ１）の第２の薄膜層と、を含む積層薄膜である。

3. 发明申请

WO2021194725A1 THERMALLY ISOLATED CAPTIVE FEATURES FOR ION IMPLANTATION SYSTEMS 审中-公开
公开(公告)号：WO2021194725A1
公开(公告)日：2021-09-30
申请号：PCT/US2021/021052
申请日：2021-03-05
申请人： APPLIED MATERIALS, INC.
发明人： MCLAUGHLIN, Adam M. , TYE, Jordan B.
IPC分类号： H01J37/08 , H01J27/02 , H01J37/317 , C23C14/48 , H01J2237/061 , H01J37/20 , H01J37/3171 , H01L21/68757
摘要： Thermally isolated captive features disposed in various components of an ion implantation system are disclosed. Electrodes, such as repellers and side electrodes, may be constructed with a captive feature, which serves as the electrode stem. The electrode stem makes minimal physical contact with the electrode mass due to a gap disposed in the interior cavity which retains the flared head of the electrode stem. In this way, the temperature of the electrode mass may remain higher than would otherwise be possible as conduction is reduced. Further, this concept can be applied to workpiece holders. For example, a ceramic platen is manufactured with one or more captive fasteners which are used to affix the platen to a base. This may minimize the thermal conduction between the platen and the base, while providing an improved mechanical connection.

4. 发明申请

WO2020243323A1 IMPROVED CHARGE STRIPPING FOR ION IMPLANTATION SYSTEMS 审中-公开
公开(公告)号：WO2020243323A1
公开(公告)日：2020-12-03
申请号：PCT/US2020/034948
申请日：2020-05-28
申请人： AXCELIS TECHNOLOGIES, INC.
发明人： SATOH, Shu
IPC分类号： H01J37/317 , C23C14/48 , H05H7/22
摘要： An ion implantation system (100) has a source that generates ions from a beam species to form an ion beam, and a mass analyzer mass analyzes the ion beam. An accelerator receives the ion beam having ions at a first charge state and exits the ion beam having ions at a second positive charge state. The accelerator has a charge stripper, a gas source, and a plurality of accelerator stages. The charge stripper converts the ions from the first charge state to the second charge state, The gas source provides a high molecular weight gas, such as hexafluoride, to the charge stripper, and the plurality of accelerator stages respectively accelerate the ions. An end station supports a workpiece to be implanted with ions at the second charge state.

5. 发明申请

WO2019118669A1 IMPROVED AMPOULE VAPORIZER AND VESSEL 审中-公开
公开(公告)号：WO2019118669A1
公开(公告)日：2019-06-20
申请号：PCT/US2018/065348
申请日：2018-12-13
申请人： ENTEGRIS, INC.
发明人： ELDRIDGE, David James , THOMAS, Jacob , CLEARY, John M. , BATTLE, Scott L. , GREGG, John , CHATTERTON, Thomas , HENDRIX, Bryan C. , BAUM, Thomas H.
IPC分类号： C23C16/448 , C23C16/44 , C23C14/22 , C23C14/48
摘要： The invention is directed to a vaporizer or ampoule assembly with an improved vaporizer vessel body and support tray assembly configuration located therein that together increase the vaporizable material utilization and uniformity

6. 发明申请

WO2019077158A1 MÉTHODE DE SYNTHÈSE D'UN MATÉRIAU BIDIMENSIONNEL BN 审中-公开
公开(公告)号：WO2019077158A1
公开(公告)日：2019-04-25
申请号：PCT/EP2018/078840
申请日：2018-10-22
申请人： THALES
发明人： LEGAGNEUX, Pierre , PRIBAT, Didier , COJOCARU, Costel-Sorin , SERVET, Bernard
IPC分类号： C23C14/48 , C23C14/58 , C23C14/06 , C23C14/00 , C23C14/02 , H01L29/66 , H01L29/24 , H01L21/02 , H01L21/3115 , H01J37/317
摘要： Procédé de réalisation d'au moins une monocouche (L) d'un matériau bidimensionnel (Mat2D), ledit matériau bidimensionnel étant constitué d'un élément B et d'un élément N étant respectivement du bore et de l'azote, le procédé comprenant : -une étape (100) d'apport de l'élément B et une étape (200) d'apport de l'élément N de manière à former, dans un substrat (L B , Sub, L met ), une zone (Z[B+N]) comprenant des atomes de l'élément B et des atomes de l'élément N, -une étape de recuit (300) de manière à former l'au moins une monocouche (L) de matériau bidimensionnel (mat2D) par diffusion desdits atomes dans ledit substrat, et dans lequel au moins une étape d'apport parmi l'étape (100) d'apport de l'élément B et l'étape (200) d'apport de l'élément N est réalisée par implantation ionique.

7. 发明申请

WO2018140193A3 EXTENSION OF PVD CHAMBER WITH MULTIPLE REACTION GASES, HIGH BIAS POWER, AND HIGH POWER IMPULSE SOURCE FOR DEPOSITION, IMPLANTATION, AND TREATMENT 审中-公开
公开(公告)号：WO2018140193A3
公开(公告)日：2018-08-02
申请号：PCT/US2017/069033
申请日：2017-12-29
申请人： APPLIED MATERIALS, INC.
发明人： LIU, Jingjing , GODET, Ludovic , NEMANI, Srinivas D. , CHEN, Yongmei , SUBRAMANI, Anantha K.
IPC分类号： C23C14/34 , C23C14/35 , C23C14/48 , H01J37/34 , H01L21/02 , H01L21/67 , C23C14/54
摘要： Embodiments of the present disclosure provide a sputtering chamber with in-situ ion implantation capability. In one embodiment, the sputtering chamber comprises a target, an RF and a DC power supplies coupled to the target, a support body comprising a flat substrate receiving surface, a bias power source coupled to the support body, a pulse controller coupled to the bias power source, wherein the pulse controller applies a pulse control signal to the bias power source such that the bias power is delivered either in a regular pulsed mode having a pulse duration of about 100-200 microseconds and a pulse repetition frequency of about 1-200 Hz, or a high frequency pulsed mode having a pulse duration of about 100-300 microseconds and a pulse repetition frequency of about 200 Hz to about 20 KHz, and an exhaust assembly having a concentric pumping port formed through a bottom of the processing chamber.

8. 发明申请

WO2017223130A1 IMPLANTATION USING SOLID ALUMINUM IODIDE (ALI3) FOR PRODUCING ATOMIC ALUMINUM IONS AND IN SITU CLEANING OF ALUMINUM IODIDE AND ASSOCIATED BY-PRODUCTS 审中-公开
标题翻译：使用固体铝酸盐（ALI3）生产原子铝离子以及原位清洗铝酸盐和相关副产物的植入
公开(公告)号：WO2017223130A1
公开(公告)日：2017-12-28
申请号：PCT/US2017/038420
申请日：2017-06-21
申请人： AXCELIS TECHNOLOGIES, INC.
发明人： KAMENITSA, Dennis , RZESZUT, Richard , SILVA, Fernando , BERINGER, Jason , WU, Xiangyang
IPC分类号： C23C14/48 , H01J37/317 , H01L21/265
摘要： An ion implantation system (101) is provided having an ion source (108) configured to form an ion beam (116) from aluminum iodide. A beamline assembly selectively transports the ion beam to an end station (106) configured to accept the ion beam for implantation of aluminum ions into a workpiece (128). The ion source may have a solid-state material source (112) having aluminum iodide in a solid form. A solid source vaporizer (146) may vaporize the aluminum iodide, defining gaseous aluminum iodide. An arc chamber (114) may form a plasma from the gaseous aluminum iodide, where arc current from a power supply (110) is configured to dissociate aluminum ions from the aluminum iodide. One or more extraction electrodes (118) may extract the ion beam from the arc chamber. Optionally, a water vapor source (150) further introduces water to react residual aluminum iodide to form hydroiodic acid, where the residual aluminum iodide and hydroiodic acid is evacuated from the system.
摘要翻译：提供了一种离子注入系统（101），其具有被配置为由碘化铝形成离子束（116）的离子源（108）。束线组件选择性地将离子束输送到终端站（106），终端站（106）被配置为接受用于将铝离子注入到工件（128）中的离子束。离子源可以具有固体形式的具有碘化铝的固态材料源（112）。固体源蒸发器（146）可蒸发碘化铝，从而确定气态碘化铝。电弧室（114）可以从气态碘化铝形成等离子体，其中来自电源（110）的电弧电流被配置为从铝碘离解铝离子。一个或多个引出电极（118）可以从电弧室提取离子束。任选地，水蒸气源（150）进一步引入水以使残余的碘化铝反应以形成氢碘酸，其中残留的碘化铝和氢碘酸从系统中排出。

9. 发明申请

WO2017014278A1 成膜装置审中-公开
标题翻译：电影制作装置
公开(公告)号：WO2017014278A1
公开(公告)日：2017-01-26
申请号：PCT/JP2016/071438
申请日：2016-07-21
申请人：住友重機械工業株式会社
发明人：北見　尚久 , 酒見　俊之 , 山本　哲也 , 野本　淳一
IPC分类号： C23C14/48 , C23C14/32
CPC分类号： C23C14/32 , C23C14/48
摘要：成膜対象物に成膜材料を成膜する成膜装置であって、前記成膜対象物を収納し成膜処理を行う真空チャンバーと、前記真空チャンバー内において前記成膜材料の粒子を前記成膜対象物に付着させる成膜部と、前記真空チャンバー内に負イオンを生成する負イオン生成部と、を備える、成膜装置。
摘要翻译：在要形成膜的物体上形成成膜材料的成膜装置设置有：用于接收要形成膜并形成膜的所述物体的真空室; 用于使所述成膜材料的颗粒粘附到所述真空室内将要形成所述膜的物体的成膜单元; 以及用于在所述真空室内产生负离子的负离子产生单元。

10. 发明申请

WO2015197497A1 METHOD FOR MANUFACTURING A COMPONENT OF AN INTERNAL-COMBUSTION ENGINE 审中-公开
标题翻译：内燃机组件的制造方法
公开(公告)号：WO2015197497A1
公开(公告)日：2015-12-30
申请号：PCT/EP2015/063855
申请日：2015-06-19
申请人： MAHLE METAL LEVE S/A , MAHLE INTERNATIONAL GMBH
发明人： FOGACA DE ALMEIDA, Romulo Petrini
IPC分类号： C23C14/48
CPC分类号： C23C14/48 , C23C8/26 , C23C8/38 , C23C8/80 , C23C14/16
摘要： The invention relates, in general terms, to a method for manufacturing a component of an internal-combustion engine and, more specifically, the invention relates to a method for a valve for an internal-combustion engine that has improved corrosion-resistance features. According to one embodiment of the invention, the method for manufacturing the component of an internal-combustion engine, said component being made of metal, includes the step of applying chromium ions to the nitrided layer.
摘要翻译：本发明总体上涉及一种用于制造内燃机的部件的方法，更具体地说，本发明涉及一种具有改进的耐腐蚀特性的用于内燃机的阀的方法。根据本发明的一个实施例，用于制造内燃机部件的方法，所述部件由金属制成，包括向氮化层施加铬离子的步骤。

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