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    • 4. 发明申请
    • LOW CEILING TEMPERATURE PROCESS FOR A PLASMA REACTOR WITH HEATED SOURCE OF A POLYMER-HARDENING PRECURSOR MATERIAL
    • 用于聚合物硬化前体材料的加热源的等离子体反应器的低天花板温度过程
    • WO9936931A3
    • 2002-09-26
    • PCT/US9827046
    • 1998-12-17
    • APPLIED MATERIALS INC
    • DING JIAN
    • H01L21/3065C23C16/517H01J37/32H01L21/311H01L21/683
    • H01J37/32871C23C16/517H01F2029/143H01J37/32082H01J37/321H01J37/32146H01J37/32165H01J37/32458H01J37/32467H01J37/32522H01J37/32688H01J37/32706H01J2237/3343H01J2237/3345H01J2237/3346H01J2237/3382H01L21/31116H01L21/6831
    • A high plasma density etch process for etching an oxygen-containing layer overlying a non-oxygen containing layer on a workpiece in a plasma reactor chamber, by providing a chamber ceiling overlying the workpiece and containing a semiconductor material, supplying into the chamber a process gas containing etchant precursor species, polymer precursor species and hydrogen, applying plasma source power into the chamber, and cooling the ceiling to a temperature range at or below about 150 degrees C. The etchant and polymer precursor species contain fluorine, and the chamber ceiling semiconductor material includes a fluorine scavenger precursor material. Preferably, the process gas includes at least one of CHF3 and CH2F2. Preferably, the process gas further includes a species including an inert gas, such as HeH2 or Ar. If the chamber is of the type including a heated fluorine scavenger precursor material, this material is heated to well above the polymer condensation temperature, while the ceiling is cooled. In some cases, the plasma source power applicator is an inductive antenna overlying the semiconductor ceiling, and the ceiling has a cooling/heating apparatus contacting the ceiling through semiconductor rings. The inductive antenna in this case constitutes inductive elements between adjacent ones of the semiconductor rings.
    • 一种高等离子体密度蚀刻工艺,用于在等离子体反应器腔室中蚀刻覆盖在工件上的非含氧层的含氧层,通过提供覆盖在工件上并容纳半导体材料的室顶部,向腔室供应工艺气体 包含蚀刻剂前体物质,聚合物前体物质和氢气,将等离子体源功率施加到室中,并将天花板冷却到约150℃或以下的温度范围。蚀刻剂和聚合物前体物质含有氟,并且室顶部半导体材料 包括氟清除剂前体材料。 优选地,工艺气体包括CHF 3和CH 2 F 2中的至少一种。 优选地,处理气体还包括包含惰性气体的物质,例如HeH 2或Ar。 如果室是包括加热的氟清除剂前体材料的类型,则将该材料加热到高于聚合物冷凝温度,同时天花板被冷却。 在一些情况下,等离子体源功率施加器是覆盖半导体天花板的感应天线,天花板具有通过半导体环与天花板接触的冷却/加热设备。 在这种情况下,感应天线在相邻的半导体环之间构成感应元件。
    • 6. 发明申请
    • A POWER TRANSFORMER/REACTOR
    • 电力变压器/反应器
    • WO99028927A2
    • 1999-06-10
    • PCT/SE1998/002160
    • 1998-11-27
    • H01F27/28H01F27/32
    • H01F27/288H01F27/2876H01F2029/143
    • The present invention relates to a power transformer/reactor (100) comprising at least one winding (221, 222). The winding/windings (221, 222) comprises/comprise at least one electric conductor, a first semiconducting layer (14) arranged around the conductor, an insulating layer (16) arranged around the first semiconducting layer (14), and a second semiconducting layer (18) arranged around the insulating layer (16). The winding/windings (221, 222) is/are enclosed in a container (102) filled with a liquid, said liquid accomplishing a cooling.
    • 本发明涉及一种包括至少一个绕组(221,222)的电力变压器/电抗器(100)。 绕组/绕组(221,222)包括/包括至少一个电导体,布置在导体周围的第一半导体层(14),围绕第一半导体层(14)布置的绝缘层(16)和第二半导电层 布置在绝缘层(16)周围的层(18)。 绕组(221,222)封闭在充满液体的容器(102)中,所述液体完成冷却。