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    • 2. 发明申请
    • SINGLE-MODE VERTICAL INTEGRATION OF ACTIVE DEVICES WITHIN PASSIVE SEMICONDUCTOR WAVEGUIDES, A METHOD AND ITS APPLICATIONS FOR USE IN PLANAR WDM COMPONENTS
    • 主动设备在被动半导体波形中的单模垂直集成,一种方法及其在平面WDM组件中的应用
    • WO02077682A2
    • 2002-10-03
    • PCT/CA0200194
    • 2002-02-18
    • METROPHOTONICS INCTOLSTIKHIN VALERY I
    • TOLSTIKHIN VALERY I
    • G02B6/12H01L31/105G02F1/01H01L31/00
    • H01L31/105G02B6/12004G02B2006/12123G02B2006/12126G02B2006/12142G02B2006/12164G02B2006/12178
    • The invention discloses a method for monolithic integration of active devices with passive semiconductor waveguides and the applic ation of this method for use in InP-based planar wavelength division multiplexing components of optical communication systems. The epitaxial structure of a monolithically integrated device is grown in a single run and comprises a number of layers, such that the lower part of the structure acts as a single mode passive waveguide (2, 3, 4, 6, 7) while the upper part of the structure contains a planar PIN diode (7, 8, 9, 10). The PIN structure is present only in the active waveguide portion and absent in all the passive waveguide portions. The active and passive waveguide portions have substantially similar guiding properties with the exception of a mode tail above a top surface of the passive waveguide portion within the active waveguide portion. As a result, an optical signal propagating within the active waveguide portion penetrates the I-layer (8) of the PIN structure and interacts with semiconductor material therein for actively affecting an intensity of the optical signal with no substantial changes in guiding properties of the semiconductor waveguide. Embodiments of invention in the form of monolithically integrated waveguide photodetector, electro-absorptive attenuator and semiconductor optical amplifier are disclosed in terms of detailed epitaxial structure, layout and performance characteristics of the device.
    • 本发明公开了一种用于有源器件与无源半导体波导的单片整合的方法以及该方法在光通信系统的基于InP的平面波分复用组件中的应用。 单片集成器件的外延结构在单次运行中生长并且包括多个层,使得该结构的下部部分用作单模无源波导(2,3,4,6,7),而上部 结构的一部分包含平面PIN二极管(7,8,9,10)。 PIN结构仅存在于有源波导部分中,并且在所有无源波导部分中不存在。 有源和无源波导部分具有基本相似的引导特性,除了有源波导部分内的无源波导部分的顶表面之上的模式尾部之外。 结果,在有源波导部分内传播的光信号穿透PIN结构的I层(8)并与其中的半导体材料相互作用以主动地影响光信号的强度,而半导体的引导特性没有实质变化 波导。 根据器件的详细外延结构,布局和性能特性,公开了以单片集成波导光电检测器,电吸收衰减器和半导体光放大器的形式的发明的实施例。
    • 3. 发明申请
    • ISOLATION DEVICE BETWEEN OPTICALLY CONDUCTIVE AREAS
    • 光导区域之间的隔离装置
    • WO02025334A1
    • 2002-03-28
    • PCT/GB2001/004191
    • 2001-09-20
    • G02B6/12G02B6/122G02B6/42H01L21/761H01L21/762
    • G02B6/122G02B6/4246G02B2006/12126H01L21/761H01L27/1463
    • An isolation device for providing optical and electrical isolating between optically conductive areas (1A, 1B9 such as parallel waveguides of an integrated optical chip comprising a first elongate region (4) doped with a first dopant material (p+), a second elongate region (5) on one side of the first elongate region (4) and a third elongate region (6) on the opposite side of the first elongate region (4), the second and third elongate regions (5, 6) being doped with a second dopant material (n+) of opposite polarity to the first dopant material (p+) so a first diode is formed between the second and first elongate regions (5, 4) and a second diode is formed between the first and third elongate regions (4, 6), the first and second diodes being connected in series with opposing polarity. The opposing diodes block the passage of electrical current and the doped regions (4, 5, 6) absorb light attempting to pass therethrough.
    • 一种用于在光导电区域(1A,1B9)之间提供光学和电气隔离的隔离装置,例如包括掺杂有第一掺杂剂材料(p +)的第一细长区域(4)的集成光学芯片的平行波导,第二细长区域 )在所述第一细长区域(4)的一侧和在所述第一细长区域(4)的相对侧上的第三细长区域(6),所述第二和第三细长区域(5,6)被掺杂有第二掺杂物 材料(n +)与第一掺杂剂材料(p +)具有相反的极性,因此第一二极管形成在第二和第一细长区域之间,第二二极管形成在第一和第三细长区域之间 ),第一和第二二极管以相反的极性串联连接,相对的二极管阻止电流的通过,并且掺杂区域(4,5,6)吸收试图通过其中的光。
    • 4. 发明申请
    • INTEGRATED LIGHT ABSORBER
    • 集成光吸收器
    • WO98057205A1
    • 1998-12-17
    • PCT/GB1998/001621
    • 1998-06-03
    • G02B6/12G02B6/122G02B6/24
    • G02B6/122G02B6/243G02B2006/12126
    • The integrated light absorber comprises a light chamber (2) integrated in an optical chip, the chamber (2) having upper (3A) and lower walls lying substantially parallel to the chip and peripheral walls (3B) extending therebetween and a light input port in a peripheral wall (3B) for receiving light to be absorbed, e.g. from a rib waveguide (1). At least some of the walls have light absorbing properties and the chamber (2) is shaped so that the majority of light which enters the chamber (2) through the light input port undergoes multiple reflections and so is absorbed by the walls of the chamber (2). Circular and star-shaped chambers (2) are described.
    • 集成光吸收器包括集成在光学芯片中的光室(2),所述腔室(2)具有大致平行于芯片的上部(3A)和下壁以及在其间延伸的周壁(3B),以及位于 用于接收待吸收的光的周壁(3B),例如 从肋波导(1)。 至少一些壁具有光吸收性质,并且室(2)成形为使得通过光输入端进入室(2)的大部分光经历多次反射,并且被室的壁吸收( 2)。 描述了圆形和星形室(2)。
    • 6. 发明申请
    • ATOMIC CLOCK
    • 原子钟
    • WO2016008549A1
    • 2016-01-21
    • PCT/EP2014/071590
    • 2014-10-08
    • CSEM CENTRE SUISSE D'ELECTRONIQUE ET DE MICROTECHNIQUE SA - RECHERCHE ET DÉVELOPPEMENT
    • GALLINET, BenjaminHAESLER, JacquesLECOMTE, SteveBASSET, Guillaume
    • G04F5/14
    • G04F5/145G02B6/124G02B6/2706G02B2006/12104G02B2006/12126H03L7/26
    • In the present invention a new atomic clock is proposed comprising: at least one light source adapted to provide an optical beam, at least one photo detector and a vapor cell comprising a first optical window, said optical beam being directed through said vapor cell for providing an optical frequency reference signal, said photo detector being adapted to detect said optical frequency reference signal and to generate at least one reference signal, wherein - said atomic clock comprises a first optical waveguide arranged to said first optical window, said first optical waveguide being arranged to incouple at least a portion of said optical beam, said first optical waveguide being sized and shaped so that said first guided light beam is expanded, - a first outcoupler is arranged to outcouple at least a portion of said guided light beam to said vapor cell, - the thickness t of the atomic clock is smaller than 15mm.
    • 在本发明中,提出了一种新的原子钟,其包括:适于提供光束的至少一个光源,至少一个光电检测器和包括第一光学窗口的蒸气池,所述光束被引导通过所述蒸汽池,以提供 光学参考信号,所述光电检测器适于检测所述光频参考信号并产生至少一个参考信号,其中 - 所述原子钟包括布置在所述第一光学窗口的第一光波导,所述第一光波导布置 至少一部分所述光束,所述第一光波导的尺寸和形状使得所述第一引导光束被扩展, - 第一输出耦合器布置成将所述被引导光束的至少一部分外耦合到所述蒸气池 , - 原子钟的厚度t小于15mm。
    • 7. 发明申请
    • 高次モードフィルタ
    • 高阶模式滤波器
    • WO2014050230A1
    • 2014-04-03
    • PCT/JP2013/066709
    • 2013-06-18
    • 日本電気株式会社
    • 高橋 重樹
    • G02B6/122
    • G02B5/20G02B6/122G02B6/14G02B2006/12097G02B2006/12109G02B2006/12126G02F1/3501G02F1/365G02F2001/3509
    •  リブ導波路型の高次モードフィルタが、板状のスラブ領域1と、スラブ領域1上に、光の導波方向に沿って帯状に形成された突起部2と、スラブ領域1の両側方のうちの一方または両方に設けられ、スラブ領域1の底面と等しい高さに位置する底面、およびスラブ領域の上面よりも高い位置にある上面を有するメサ領域4と、を有し、突起部2とスラブ領域1とメサ領域4とは同一の材料からなり、メサ領域4は、材料への不純物ドーピングによって光吸収機能が付与されたドーピング領域4aを含む。
    • 提供了一种肋波导型高阶模式滤波器,其包括:板状板区域(1); 在所述板坯区域(1)上沿着光波导方向形成为带状的突起部(2)。 以及台面区域(4),其具有位于与所述板坯区域(1)的底面相同水平面的底面,以及位于比所述板坯区域的顶面高的位置的顶面, 所述台面区域设置在所述板坯区域(1)的一端或两端。 突起部分(2),板坯区域(1)和台面区域(4)由相同的材料制成,并且台面区域(4)包括通过杂质掺杂形成的掺杂区域(4a) 对其材料,由此向台面区域(4)施加光吸收功能。