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    • 7. 发明申请
    • METHOD FOR CREATING ATOMICALLY SHARP EDGES ON OBJECTS MADE OF CRYSTAL MATERIAL
    • 用于在晶体材料物体上形成原子形键的方法
    • WO2014052296A1
    • 2014-04-03
    • PCT/US2013/061365
    • 2013-09-24
    • RUBICON TECHNOLOGY, INC.
    • PHATAK, Sunil, B.NABULSI, Faisal, A.
    • B28D5/04B26D3/00C03B33/02
    • B26B9/00C30B29/20C30B33/10
    • A process to make atomically sharp cutting devices is described. The process may provide for a cost effective and efficient technique of producing the atomically sharp cutting devices made from single crystal material such as, for example, sapphire, silicon carbide, silicon, and the like. The process may include identifying and choosing a preferred geometric orientation of the crystal material where cleavage can be promoted along a preferred natural plane of the single crystal material, thus ultimately producing an atomically sharp edge. The single crystal material may be covered at select surface locations by a photo-resist material arranged in a predetermined alignment with reference to the preferred plane to prevent etching at unexposed surface portions while permitting etching at exposed surface portions of the single crystal material. An atomic edge may be created by physical cleaving once the etching has reached a predetermined end-point.
    • 描述了制造原子锋利的切割装置的过程。 该方法可以提供生产由诸如蓝宝石,碳化硅,硅等的单晶材料制成的原子锋利切割装置的成本有效和有效的技术。 该方法可以包括识别和选择晶体材料的优选几何取向,其中可以沿着单晶材料的优选天然平面促进切割,从而最终产生原子锋利的边缘。 可以通过相对于优选平面以预定对准布置的光刻胶材料在选择的表面位置处覆盖单晶材料,以防止在未曝光的表面部分处的蚀刻,同时允许在单晶材料的暴露表面部分处的蚀刻。 一旦蚀刻达到预定的终点,就可以通过物理分裂来产生原子边缘。
    • 10. 发明申请
    • METHOD AND SYSTEM OF PRODUCING LARGE OXIDE CRYSTALS FROM A MELT
    • 从熔体生产大量氧化物晶体的方法和系统
    • WO2015012941A1
    • 2015-01-29
    • PCT/US2014/037867
    • 2014-05-13
    • RUBICON TECHNOLOGY, INC.
    • MONTGOMERY, MatthewBURKS, Timothy, D.PODLOZHENOV, SergeyLEVINE, Jonathan
    • C30B11/00C30B29/20
    • C30B11/003C30B11/007C30B29/20Y10T117/1092
    • A process and system may be employed to produce large, defect- free oxide crystals with high melting points which may utilize a water-cooled horizontal furnace with a hot zone design comprising multiple independently controllable heaters surrounded by a vapor shield and various layers of thermal insulation of varying thickness and composition. Raw materials such as sapphire crystals or alumina powder may be placed in a crucible or boat that may be positioned to ride on rollers. The crucible may be pulled (or pushed) through a furnace environment surrounded by a vapor shield and insulation at a controlled rate to melt and then crystallize the raw material into a sapphire crystal. The vacuum level may be controlled by a vacuum system attached to the furnace. Process parameters such as power, temperature, pulling speed (i.e., movement speed), heating rates, cooling rates, and chamber pressure may be controlled by a control system which may be configured to take an input from each component of the system and sends the necessary control outputs.
    • 可以使用方法和系统来产生具有高熔点的大的,无缺陷的氧化物晶体,其可以利用具有热区设计的水冷卧式炉,其包括被蒸气屏蔽和各种绝热层包围的多个独立可控制的加热器 不同厚度和组成。 诸如蓝宝石晶体或氧化铝粉末的原材料可以放置在可以定位成骑在辊上的坩埚或船上。 坩埚可以被拉动(或推动)通过由蒸气屏蔽物包围的炉子环境并以受控的速率绝缘熔化,然后将原料结晶成蓝宝石晶体。 真空度可以通过连接到炉子的真空系统来控制。 诸如功率,温度,牵引速度(即移动速度),加热速率,冷却速率和室压力的过程参数可以由控制系统来控制,所述控制系统可被配置为从系统的每个部件获取输入,并且发送 必要的控制输出。