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1. 发明申请

WO2010147532A1 MICROBOLOMETER SEMICONDUCTOR MATERIAL 审中-公开
标题翻译：微电极半导体材料
公开(公告)号：WO2010147532A1
公开(公告)日：2010-12-23
申请号：PCT/SE2010/000168
申请日：2010-06-17
申请人： MALM, Gunnar
发明人： MALM, Gunnar
IPC分类号： G01J5/20 , H01L31/0352 , H01L31/09 , H01L27/146 , H01L31/028 , H01L31/0312
CPC分类号： G01J5/22 , G01J5/02 , G01J5/0215 , G01J5/024 , G01J5/046 , H01L27/14649 , H01L31/022408 , H01L31/09 , H01L31/1035 , H01L31/108 , H01L31/1085 , H01L31/1804 , H01L31/1812 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： A sensor for detecting intensity of radiation such as of infrared radiation includes an ROIC substrate (9) and a resistance element (1) arranged at a distance of the surface of the ROIC substrate. The resistance element comprises one more semiconducting layers such as a silicon semiconducting layer and a semiconducting layer of a silicon-germanium alloy forming a heterojunction. The semiconducting layer or layers can be doped with one or more impurity dopants, the doping level or levels selected so that the layer retains the basic crystallographic properties of the respective material such as those of monosilicon or a monocrystalline silicon-germanium alloy. The impurity dopants are selected from the elements in groups IE, IV, and V, in particular among boron, aluminium, indium, arsenic, phosphorous, antimony, germanium, carbon and tin. The doping can be abrupt so that there is an interior layer inside said semiconducting layer or layers having a significantly higher doping level.
摘要翻译：用于检测诸如红外辐射的辐射强度的传感器包括ROIC衬底（9）和布置在ROIC衬底表面一定距离处的电阻元件（1）。电阻元件包括一个更多的半导体层，例如硅半导体层和形成异质结的硅 - 锗合金的半导体层。半导体层可以掺杂有一种或多种杂质掺杂剂，所选择的掺杂水平或级别使得该层保留各种材料的基本晶体学性质，例如单晶硅或单晶硅 - 锗合金的基本晶体学性质。杂质掺杂剂选自组IE，IV和V中的元素，特别是硼，铝，铟，砷，磷，锑，锗，碳和锡中的元素。掺杂可以是突变的，使得在所述半导体层内部存在内层，或者具有显着更高掺杂水平的层。

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