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1. 发明申请

WO2011156031A2 METHOD AND SYSTEM FOR PROVIDING INVERTED DUAL MAGNETIC TUNNELING JUNCTION ELEMENTS 审中-公开
标题翻译：用于提供反转双磁性连接元件的方法和系统
公开(公告)号：WO2011156031A2
公开(公告)日：2011-12-15
申请号：PCT/US2011/028254
申请日：2011-03-13
申请人： GRANDIS, INC. , TANG, Xueti , WU, Jing
发明人： TANG, Xueti , WU, Jing
IPC分类号： G06F7/40
CPC分类号： G11C11/1675 , G11C11/16 , G11C11/161 , H01L43/12
摘要： A method and system for providing a magnetic junction residing on a substrate and usable in a magnetic device are described. The magnetic junction includes a first pinned layer, a first nonmagnetic spacer layer having a first thickness, a free layer, a second nonmagnetic spacer layer having a second thickness greater than the first thickness, and a second pinned layer. The first nonmagnetic spacer layer resides between the pinned layer and the free layer. The first pinned layer resides between the free layer and the substrate. The second nonmagnetic spacer layer is between the free layer and the second pinned layer. Further, the magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
摘要翻译：描述了一种用于提供驻留在基板上并可用于磁性装置中的磁性结的方法和系统。磁结包括第一被钉扎层，具有第一厚度的第一非磁性间隔层，具有大于第一厚度的第二厚度的自由层，第二非磁性间隔层，以及第二钉扎层。第一非磁性间隔层位于被钉扎层和自由层之间。第一被钉扎层位于自由层和基底之间。第二非磁性间隔层位于自由层和第二被钉扎层之间。此外，磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

2. 发明申请

WO2011081794A1 METHOD AND SYSTEM FOR PROVIDING A HIGH DENSITY MEMORY CELL FOR SPIN TRANSFER TORQUE RANDOM ACCESS MEMORY 审中-公开
标题翻译：用于提供高密度存储单元的方法和系统，用于旋转转矩随机存取存储器
公开(公告)号：WO2011081794A1
公开(公告)日：2011-07-07
申请号：PCT/US2010/059184
申请日：2010-12-07
申请人： GRANDIS, INC. , ONG, Adrian, E.
发明人： ONG, Adrian, E.
IPC分类号： G11C15/02
CPC分类号： G11C11/1675 , G11C11/1659 , G11C11/1673
摘要： A method and system for providing a magnetic memory are described. The method and system include providing a plurality of magnetic storage cells, a plurality of bit lines corresponding to the magnetic storage cells, a plurality of word lines corresponding to the magnetic storage cells, and a common voltage plane coupled with the magnetic storage cells. Each of the magnetic storage cells includes at least one magnetic element and at least one selection device coupled with the magnetic element(s). The magnetic element(s) are programmable using at least one write current driven through the magnetic element(s). The common voltage plane is coupled with the memory cells. The write current(s) flow between the common voltage plane, the magnetic element(s), and at least one of the bit lines.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。该方法和系统包括提供多个磁存储单元，对应于磁存储单元的多个位线，对应于磁存储单元的多个字线以及与磁存储单元耦合的公共电压平面。每个磁存储单元包括至少一个磁性元件和与磁性元件耦合的至少一个选择装置。磁性元件可使用驱动通过磁性元件的至少一个写入电流来编程。公共电压平面与存储器单元耦合。公共电压平面，磁性元件和至少一个位线之间的写入电流流动。

3. 发明申请

WO2007047311A3 SPIN TRANSFER BASED MAGNETIC STORAGE CELLS UTILIZING GRANULAR FREE LAYERS AND MAGNETIC MEMORIES USING SUCH CELLS 审中-公开
标题翻译：使用这种细胞的基于转移的磁性储存细胞利用颗粒自由层和磁性记忆
公开(公告)号：WO2007047311A3
公开(公告)日：2009-04-30
申请号：PCT/US2006039744
申请日：2006-10-11
申请人： GRANDIS INC , APALKOV DMYTRO , DIAO ZHITAO , DING YUNFEL , HUAI YIMING
发明人： APALKOV DMYTRO , DIAO ZHITAO , DING YUNFEL , HUAI YIMING
IPC分类号： G11B5/39 , G11B5/127 , G11C11/00
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/16 , H01F10/3227 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3272 , H01F10/3286 , H01L43/10
摘要： A method and system for providing a magnetic element and a memory incorporating the magnetic element is described. The method and system for providing the magnetic element include providing a pinned layer, a spacer layer, and a free layer. The free layer includes granular free layer having a plurality of grains in a matrix, the spacer layer residing between the pinned layer and the free layer. The magnetic element is configured to allow the granular free layer to be switched due to spin-transfer when a write current is passed through the magnetic element.
摘要翻译：描述了一种用于提供磁性元件的方法和系统以及结合有磁性元件的存储器。用于提供磁性元件的方法和系统包括提供钉扎层，间隔层和自由层。自由层包括在矩阵中具有多个晶粒的颗粒状自由层，间隔层位于被钉扎层和自由层之间。磁性元件配置成当写入电流通过磁性元件时由于自旋转移而允许粒状自由层被切换。

4. 发明申请

WO2009026249A1 MAGNETIC ELEMENT HAVING LOW SATURATION MAGNETIZATION 审中-公开
标题翻译：具有低饱和磁化的磁性元件
公开(公告)号：WO2009026249A1
公开(公告)日：2009-02-26
申请号：PCT/US2008/073512
申请日：2008-08-18
申请人： GRANDIS INC. , RENESAS TECHNOLOGY CORP. , NAGAI, Hide , DIAO, Zhitao , HUAI, Yiming
发明人： NAGAI, Hide , DIAO, Zhitao , HUAI, Yiming
IPC分类号： G11C11/15 , G11B5/127
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659
摘要： A magnetic device including a magnetic element is described. The magnetic element includes a fixed layer having a fixed layer magnetization, a spacer layer that is nonmagnetic, and a free layer having a free layer magnetization. The free layer is changeable due to spin transfer when a write current above a threshold is passed through the first free layer. The free layer includes a low saturation magnetization material.
摘要翻译：描述包括磁性元件的磁性装置。磁性元件包括具有固定层磁化的固定层，非磁性的间隔层和具有自由层磁化的自由层。当超过阈值的写入电流通过第一自由层时，由于自旋转移，自由层是可变的。自由层包括低饱和磁化材料。

5. 发明申请

WO2007100626A3 CURRENT DRIVEN MEMORY CELLS HAVING ENHANCED CURRENT AND ENHANCED CURRENT SYMMETRY 审中-公开
标题翻译：具有增强电流和增强电流对称性的电流驱动存储器电池
公开(公告)号：WO2007100626A3
公开(公告)日：2008-12-24
申请号：PCT/US2007004662
申请日：2007-02-22
申请人： GRANDIS INC , HUAI YIMING , CHEN EUGENE
发明人： HUAI YIMING , CHEN EUGENE
IPC分类号： G11C11/00
CPC分类号： G11C11/1697 , G11C11/1653 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C2013/0071 , G11C2013/0073
摘要： A method and system for providing and using a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells. Each magnetic storage cell includes a magnetic element and a selection device coupled with the magnetic element. The magnetic element is programmed by write currents driven through the magnetic element in a first or second direction. In one aspect, the method and system include providing a voltage supply and a voltage pump coupled with the magnetic storage cells and the voltage supply. The voltage supply provides a supply voltage. The voltage pump provides to the selection device a bias voltage having a magnitude greater than the supply voltage. Another aspect includes providing a silicon on oxide transistor as the selection device. Another aspect includes providing to the body of the transistor a body bias voltage that is a first voltage when the transistor is off and a second voltage when the transistor is on.
摘要翻译：描述了一种用于提供和使用磁存储器的方法和系统。该方法和系统包括提供多个磁存储单元。每个磁存储单元包括磁性元件和与磁性元件耦合的选择装置。通过在第一或第二方向通过磁性元件驱动的写入电流来对磁性元件进行编程。一方面，该方法和系统包括提供与磁存储单元和电压源耦合的电压源和电压泵。电源提供电源电压。电压泵向选择装置提供具有大于电源电压的幅度的偏置电压。另一方面包括在氧化物晶体管上提供硅作为选择装置。另一方面包括向晶体管的主体提供当晶体管截止时为第一电压的体偏置电压，以及晶体管导通时的第二电压。

6. 发明申请

WO2008154519A1 METHOD AND SYSTEM FOR PROVIDING A MAGNETIC ELEMENT AND MAGNETIC MEMORY BEING UNIDIRECTIONAL WRITING ENABLED 审中-公开
标题翻译：提供磁性元件和磁记忆的方法和系统使用非编码写作
公开(公告)号：WO2008154519A1
公开(公告)日：2008-12-18
申请号：PCT/US2008/066369
申请日：2008-06-09
申请人： GRANDIS, INC. , CHEN, Eugene, Youjun , APALKOV, Dmytro
发明人： CHEN, Eugene, Youjun , APALKOV, Dmytro
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A method and system for providing a magnetic element and memory utilizing the magnetic element are described. The magnetic element includes a reference layer, a nonferromagnetic spacer layer, and a free layer. The reference layer has a resettable magnetization that is set in a selected direction by a magnetic field generated externally to the reference layer. The reference layer is also magnetically thermally unstable at an operating temperature range and has KuV/kBT is less than fifty five. The spacer layer resides between the reference layer and the free layer. In addition, the magnetic element is configured to allow the free layer to be switched to each of a plurality of states when a write current is passed through the magnetic element.
摘要翻译：描述了利用磁性元件提供磁性元件和存储器的方法和系统。磁性元件包括参考层，非铁磁隔离层和自由层。参考层具有通过在参考层外部产生的磁场而在选定方向上设定的可复位磁化强度。参考层在工作温度范围内也是磁性不稳定的，KuV / kBT小于五十五。间隔层位于参考层和自由层之间。此外，磁性元件被配置为当写入电流通过磁性元件时允许自由层切换到多个状态中的每一个状态。

7. 发明申请

WO2007143393A3 METHOD AND SYSTEM FOR PROVIDING A MAGNETIC MEMORY STRUCTURE UTILIZING SPIN TRANSFER 审中-公开
公开(公告)号：WO2007143393A3
公开(公告)日：2007-12-13
申请号：PCT/US2007/069558
申请日：2007-05-23
申请人： GRANDIS, INC. , RENESAS TECHNOLOGY CORP. , LUO, Xiao , CHEN, Eugene, Youjun , WANG, Lien-Chang , HUAI, Yiming
发明人： LUO, Xiao , CHEN, Eugene, Youjun , WANG, Lien-Chang , HUAI, Yiming
IPC分类号： G11C11/00
摘要： A method and system for providing a magnetic memory is described. The method and system include providing magnetic memory cells, local and global word lines, bit lines, and source lines. Each magnetic memory cell includes a magnetic element and a selection device connected with the magnetic element. The magnetic element is programmed by first and second write currents driven through the magnetic element in first and second directions. The local word lines are connected with the selection device of and have a first resistivity. Each global word line corresponds to a portion of the local word lines and has a resistivity lower than the first resistivity. The bit lines are connected with the magnetic element. The source lines are connected with the selection device. Each source line corresponds to a more than one of the magnetic memory cells and carries the first and second write currents.

8. 发明申请

WO2006071724A3 MTJ ELEMENTS WITH HIGH SPIN POLARIZATION LAYERS CONFIGURED FOR SPIN-TRANSFER SWITCHING AND SPINTRONICS DEVICES USING THE MAGNETIC ELEMENTS 审中-公开
标题翻译：具有配置用于旋转切换的高旋转极化层的MTJ元件和使用磁性元件的旋转器件
公开(公告)号：WO2006071724A3
公开(公告)日：2007-06-07
申请号：PCT/US2005046584
申请日：2005-12-22
申请人： GRANDIS INC , HUAI YIMING , PAKALA MAHENDRA
发明人： HUAI YIMING , PAKALA MAHENDRA
IPC分类号： H01L21/00 , H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/16 , H01F10/3204 , H01F10/3254 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01F10/3286 , H01F41/302
摘要： A method and system for providing a magnetic element are disclosed. The method and system include providing first (102) and second (120) pinned layers, a free layer (114), and first (112) and second (116) barrier layers between the first and second pinned layers, respectively, and the free layer. The first barrier layer is oreferably crystalline MgO, which is insulating, and configured to allow tunneling through the first barrier layer. Furthermore, the first barrier layer has an interface with another layer, such as the free layer or the first pinned layer. The interface has a structure that provides a high spin polarization of at least fifty percent and preferably over eighty percent. The second barrier layer is insulating and configured to allow tunneling through the second barrier layer. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.
摘要翻译：公开了一种用于提供磁性元件的方法和系统。该方法和系统包括分别在第一和第二被钉扎层之间提供第一（102）和第二（120）钉扎层，自由层（114）以及第一（112）和第二（116）阻挡层，层。第一阻挡层是结晶的MgO，其是绝缘的，并且被配置为允许隧道穿过第一阻挡层。此外，第一阻挡层具有与另一层（例如自由层或第一固定层）的界面。界面具有提供至少百分之五十，优选百分之八十以上的高自旋极化的结构。第二阻挡层是绝缘的并且被配置为允许隧道穿过第二阻挡层。磁性元件被配置为当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。

9. 发明申请

WO2007047311A2 SPIN TRANSFER BASED MAGNETIC STORAGE CELLS UTILIZING GRANULAR FREE LAYERS AND MAGNETIC MEMORIES USING SUCH CELLS 审中-公开
标题翻译：使用这种细胞的基于转移的磁性储存细胞利用颗粒自由层和磁性记忆
公开(公告)号：WO2007047311A2
公开(公告)日：2007-04-26
申请号：PCT/US2006/039744
申请日：2006-10-11
申请人： GRANDIS, INC. , APALKOV, Dmytro , DIAO, Zhitao , DING, Yunfel , HUAI, Yiming
发明人： APALKOV, Dmytro , DIAO, Zhitao , DING, Yunfel , HUAI, Yiming
IPC分类号： H01L47/00 , H01L29/00
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/16 , H01F10/3227 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3272 , H01F10/3286 , H01L43/10
摘要： A method and system for providing a magnetic element and a memory incorporating the magnetic element is described. The method and system for providing the magnetic element include providing a pinned layer, a spacer layer, and a free layer. The free layer includes granular free layer having a plurality of grains in a matrix, the spacer layer residing between the pinned layer and the free layer. The magnetic element is configured to allow the granular free layer to be switched due to spin-transfer when a write current is passed through the magnetic element.
摘要翻译：描述了用于提供磁性元件的方法和系统以及结合有磁性元件的存储器。用于提供磁性元件的方法和系统包括提供钉扎层，间隔层和自由层。自由层包括在矩阵中具有多个晶粒的颗粒状自由层，间隔层位于被钉扎层和自由层之间。磁性元件被配置为当写入电流通过磁性元件时由于自旋转移而允许粒状自由层被切换。

10. 发明申请

WO2005079528A3 SPIN TRANSFER MAGNETIC ELEMENT HAVING LOW SATURATION MAGNETIZATION FREE LAYERS 审中-公开
标题翻译：具有低饱和磁化自由层的旋转磁体元件
公开(公告)号：WO2005079528A3
公开(公告)日：2006-10-19
申请号：PCT/US2005005448
申请日：2005-02-18
申请人： GRANDIS INC , NGUYEN PAUL P , HUAI YIMING , DIAO ZHITAO , ALBERT FRANK
发明人： NGUYEN PAUL P , HUAI YIMING , DIAO ZHITAO , ALBERT FRANK
IPC分类号： H01L43/00 , G11B5/673 , G11C11/15 , G11C11/16 , H01F10/16 , H01F10/32 , H01F41/30 , H01H9/00 , H01L43/10
CPC分类号： H01L43/10 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/16 , H01F10/3263 , H01F10/3272 , H01F41/303
摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. In one aspect, the free layer(s) include ferromagnetic material(s) diluted with nonmagnetic material(s) and/or ferrimagnetically doped to provide low saturation magnetization(s).
摘要翻译：公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。磁性元件包括固定，非磁性间隔物和自由层。间隔层位于固定层和自由层之间。当写入电流通过磁性元件时，可以使用自旋转移来切换自由层。磁性元件还可以包括阻挡层，第二被钉扎层。或者，包括第二固定和第二间隔层和静电耦合到自由层的第二自由层。在一个方面，自由层包括用非磁性材料稀释的铁磁材料和/或亚铁磁掺杂以提供低的饱和磁化强度。

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