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    • 1. 发明申请
    • A METHOD AND SYSTEM FOR DETERMINING VOIDS IN A BUMP OR SIMILAR OBJECT
    • 确定缓冲或类似对象中的空隙的方法和系统
    • WO2017191634A1
    • 2017-11-09
    • PCT/IL2017/050487
    • 2017-05-02
    • XWINSYS LTD
    • GEFFEN, MichaelREINIS, DoronSMITH, ColinPERETZ, Roni
    • G01N23/223G01N21/00
    • A method and a system for a bump's inspection are disclosed. The inspection is done by comparing the geometrical volume contained in the bump's outside contour and the volume of the solid materials (atomic volume) from which the bump is made and/or analyzing the bump's solid materials ratio. Principally, the inspection is done by preparing an empirical reference table of the emitted energy received from the solid materials, from which a reference bump with a given volume is comprised, using EDXRF (Energy-Dispersive-X-ray-Fluorescence) analysis; obtaining a geometrical volume of the bump using a 3D image-processing method; adapting the reference table according to the difference between the atomic volume and the geometrical volume of the bump; The difference between atomic volume and geometrical volume are used to inspect the bump and to determine the presence and volume of voids within the bump. Similar techniques can also be employed in connection with the determination of, for example, the thickness dimensions of a multi-layered stacked array of metals, the depth dimensions of relevant features, and surface uniformity or irregularity.
    • 公开了一种用于碰撞检查的方法和系统。 通过比较包含在凸块的外轮廓中的几何体积和制成凸块的固体材料的体积(原子体积)和/或分析凸块的固体材料比率来完成检查。 原则上,通过使用EDXRF(能量分散-X-射线荧光)分析制备由固体材料接收的发射能量的经验参考表来完成检查,从该固体材料接收具有给定体积的参考凸点; 使用3D图像处理方法获得隆起的几何体积; 根据原子体积与凸块的几何体积之间的差异来调整参考表; 原子体积和几何体积之间的差异用于检查凸块并确定凸块内空隙的存在和体积。 结合确定例如金属的多层堆叠阵列的厚度尺寸,相关特征的深度尺寸以及表面均匀性或不规则性,也可以采用类似的技术。
    • 2. 发明申请
    • A METHOD AND A SYSTEM FOR RECOGNIZING VOIDS IN A BUMP
    • 用于识别BUMP中的VOID的方法和系统
    • WO2013038406A1
    • 2013-03-21
    • PCT/IL2012/050342
    • 2012-09-02
    • XWINSYS LTD.GEFFEN, MichaREINIS, Doron
    • GEFFEN, MichaREINIS, Doron
    • G01N23/08G01N23/00
    • G01N23/22G01N23/2252G01N2223/6113G01R31/26
    • A method and a system for bump's inspection are disclosed. The inspection done by comparing the volume of the bump's outside contour and the volume the solid materials from which the bump is made and/or analyzing the bump's solid materials ratio. Principally, the inspection id done by preparing an empiric reference table of the emitted energy received from the solid materials, from which a reference proper bump with a given volume is comprised, using ED-XRF (Energy-Dispersive-X-ray-Fluorescence analysis) analyze; obtaining a first calculated volume of the bump, using a 3D image-processing method; adapting the reference table according to the difference between the given volume and the first calculated volume of the bump; performing a second volume calculation of the bump by applying ED-XRF technology. The difference between the first and second volume calculations and the solid material combination are used to inspect the bump.
    • 公开了一种用于凸块检查的方法和系统。 通过比较凸块的外部轮廓的体积和制造凸起的固体材料和/或分析凸块的固体材料比来进行检查。 主要是通过使用ED-XRF(能量 - 分散X射线 - 荧光分析法)制备从固体材料接收的发射能量的经验参考表,其中包括具有给定体积的参考适当凸块 )分析; 使用3D图像处理方法获得凸起的第一计算体积; 根据给定体积与凸起的第一计算体积之间的差异来适应参考表; 通过应用ED-XRF技术对凸点进行第二次体积计算。 第一和第二体积计算和固体材料组合之间的差异用于检查凸块。
    • 3. 发明申请
    • METROLOGY INSPECTION APPARATUS
    • 计量检查装置
    • WO2016193968A1
    • 2016-12-08
    • PCT/IL2016/050555
    • 2016-05-29
    • XWINSYS LTD.
    • REINIS, DoronGEFFEN, MichaelPERETZ, RoniSMITH, Colin
    • G01N23/22G01N21/00
    • G01N23/223G01N23/2076G01N23/2206G01N2223/076G01N2223/6116G02B21/0004
    • METROLOGY INSPECTION APPARATUS [001]The present disclosure provides a method and an apparatus for apparatus for inspecting a semiconductor wafer for abnormalities by accurately measuring elemental concentration at a target area. The apparatus includes an x-ray imaging subsystem for measuring an elemental composition at the target area of the semiconductor wafer. The apparatus further includes an edxrf subsystem for measuring an elemental concentration at the target area of the semiconductor wafer. The elemental concentration may be calibrated by first correlating the elemental concentration measurements obtained using x-ray imaging system for the target area with the elemental concentration measurements obtained using the edxrf subsystem for the target area to receive an augmented and accurate elemental concentration measurement for the target area of the semiconductor wafer.
    • 计量检查装置本公开提供了一种用于通过精确测量目标区域的元素浓度来检查半导体晶片以获得异常的装置的方法和装置。 该装置包括用于测量半导体晶片的目标区域的元素组成的x射线成像子系统。 该装置还包括用于测量半导体晶片的目标区域的元素浓度的edxrf子系统。 可以通过首先将用于目标区域的x射线成像系统获得的元素浓度测量与使用目标区域的edxrf子系统获得的元素浓度测量结果相关联,以接收目标的增强和精确的元素浓度测量来校准元素浓度 半导体晶片的面积。
    • 4. 发明申请
    • METROLOGY MEASURING APPARATUS
    • 计量测量装置
    • WO2016193967A1
    • 2016-12-08
    • PCT/IL2016/050554
    • 2016-05-29
    • XWINSYS LTD.
    • REINIS, DoronGEFFEN, MichaelPERETZ, RoniSMITH, Colin
    • G01N23/22G01N21/00
    • G01N23/223G01N2223/076G01N2223/6116G02B21/0024
    • The present disclosure provides a method and an apparatus for apparatus for accurately measuring and calibrating elemental concentration measurements for a semiconductor wafer. The apparatus includes an edxrf system for calculating an elemental concentration at a target area of the semiconductor wafer. The apparatus further includes an optical subsystem for calculating volumetric information of the target area of the semiconductor wafer. The elemental concentration may be calibrated by first correlating the elemental concentration measurements for a norm feature at the target area with the volumetric information for the norm feature of the target area to obtain a calibration data. Thereafter, the calibration data obtained is used to calibrate the elemental concentration measurements to achieve an accurate measurement thereof.
    • 本公开提供了一种用于精确测量和校准半导体晶片的元素浓度测量的装置的方法和装置。 该装置包括用于计算半导体晶片的目标区域的元素浓度的edxrf系统。 该装置还包括用于计算半导体晶片的目标区域的体积信息的光学子系统。 可以通过首先将目标区域上的范数特征的元素浓度测量与目标区域的范数特征的体积信息相关联来校准元素浓度,以获得校准数据。 此后,所获得的校准数据用于校准元素浓度测量值以获得其精确测量。