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    • 1. 发明申请
    • EXTREME EDGE UNIFORMITY CONTROL
    • 极端均匀控制
    • WO2018052614A1
    • 2018-03-22
    • PCT/US2017/046914
    • 2017-08-15
    • VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    • LIKHANSKII, AlexandrePETTERSON, MaureenHAUTALA, JohnRENAU, AnthonyROWLAND, Christopher A.BILOIU, Costel
    • H01J37/32
    • A workpiece processing apparatus allowing independent control of the voltage applied to the shield ring and the workpiece is disclosed. The workpiece processing apparatus includes a platen. The platen includes a dielectric material on which a workpiece is disposed. A bias electrode is disposed beneath the dielectric material. A shield ring, which is constructed from a metal, ceramic, semiconductor or dielectric material, is arranged around the perimeter of the workpiece. A ring electrode is disposed beneath the shield ring. The ring electrode and the bias electrode may be separately powered. This allows the surface voltage of the shield ring to match that of the workpiece, which causes the plasma sheath to be flat. Additionally, the voltage applied to the shield ring may be made different from that of the workpiece to compensate for mismatches in geometries. This improves uniformity of incident angles along the outer edge of the workpiece.
    • 公开了允许独立控制施加到屏蔽环和工件的电压的工件加工装置。 工件加工设备包括台板。 台板包括其上放置工件的介电材料。 偏压电极设置在介电材料下方。 由金属,陶瓷,半导体或介电材料构成的屏蔽环围绕工件的周边布置。 环形电极设置在屏蔽环的下方。 环形电极和偏置电极可以分开供电。 这允许屏蔽环的表面电压与工件的表面电压相匹配,这导致等离子体护套变得平坦。 此外,施加到屏蔽环的电压可以与工件的电压不同,以补偿几何形状的不匹配。 这改善了沿着工件外边缘的入射角度的均匀性。