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1. 发明申请

WO2010131011A1 SEMICONDUCTOR THIN FILMS 审中-公开
标题翻译：半导体薄膜
公开(公告)号：WO2010131011A1
公开(公告)日：2010-11-18
申请号：PCT/GB2010/000972
申请日：2010-05-14
申请人： UNIVERSITY OF WARWICK , JONES, Timothy , HATTON, Ross , SCHUMANN, Stefan
发明人： JONES, Timothy , HATTON, Ross , SCHUMANN, Stefan
IPC分类号： H01L51/42
CPC分类号： H01L51/0003 , H01L51/0036 , H01L51/0037 , H01L51/4253 , Y02E10/549 , Y02P70/521
摘要： A process for the production of an organic semiconductor thin film structure. Nanoparticles (11 ) of a removable material such as polystyrene are co-deposited with an organic semiconductor on a substrate electrode (9) from a mixture (10) of a colloidal suspension of the nanoparticles and a solution of the organic semiconductor. By self assembly, the nanoparticles form an ordered structure (15) defining a network of interstitial spaces which are infiltrated by the organic semiconductor material. The nanoparticles are removed by hot solvent vapour so as to leave a three dimensional ordered macroporous structure of the organic semiconductor material. A second semiconductor material can then be infiltrated into the pores left by removal of the nanoparticles, and a second electrode added to make a photo-sensitive cell.
摘要翻译：一种制备有机半导体薄膜结构的方法。可去除材料如聚苯乙烯的纳米颗粒（11）与来自纳米颗粒的胶体悬浮液和有机半导体溶液的混合物（10）的底物电极（9）上的有机半导体共沉积。通过自组装，纳米颗粒形成定义由有机半导体材料渗透的间隙空间网络的有序结构（15）。通过热溶剂蒸气除去纳米颗粒，以留下有机半导体材料的三维有序大孔结构。然后可以通过去除纳米颗粒而将第二半导体材料渗透到残留的孔中，并且添加第二电极以制备感光细胞。

2. 发明申请

WO2011027124A1 ORGANIC PHOTOSENSITIVE OPTOELECTRONIC DEVICES 审中-公开
标题翻译：有机光敏光电器件
公开(公告)号：WO2011027124A1
公开(公告)日：2011-03-10
申请号：PCT/GB2010/001673
申请日：2010-09-03
申请人： UNIVERSITY OF WARWICK , JONES, Timothy , HATTON, Ross
发明人： JONES, Timothy , HATTON, Ross
IPC分类号： H01L27/30
CPC分类号： H01L27/302 , B82Y10/00 , H01L51/0046 , H01L51/4246 , H01L51/4253
摘要： A photosensitive optoelectronic device (1) comprises a plurality of organic semiconductor sub-cells (10, 11, 12, 13) arranged in a stack between electrodes (3, 5), each sub-cell comprising donor material (14, 16, 23, 25) and acceptor material (15, 17, 24, 26) providing a heterojunction. There is a recombination layer (19, 22, 28) between adjacent sub-cells. The sub-cells are arranged in two groups (20, 29). The sub-cells (10, 1 1; 12, 13) within a group (20; 29) are responsive over substantially the same part of the light spectrum. The groups (20, 29) differ substantially from each other in respect of the parts of the light spectrum over which their respective sub-cells are responsive.
摘要翻译：光敏光电子器件（1）包括布置在电极（3,5）之间的堆叠中的多个有机半导体子电池（10,11,12,13），每个子电池包括供体材料（14,16,23 ，25）和提供异质结的受主材料（15,17,24,26）。在相邻子单元之间存在复合层（19,22,28）。子电池分为两组（20,29）。组（20; 29）内的子电池（10,11; 12,13）在光谱的基本上相同的部分上是响应的。各组（20,29）相对于它们各自的子单元响应的光谱的部分彼此大不相同。

3. 发明申请

WO2013179027A1 METHOD OF PRODUCING A FILM 审中-公开
标题翻译：生产电影的方法
公开(公告)号：WO2013179027A1
公开(公告)日：2013-12-05
申请号：PCT/GB2013/051418
申请日：2013-05-29
申请人： THE UNIVERSITY OF WARWICK
发明人： HATTON, Ross , STEC, Helena
IPC分类号： H01L51/00 , H01L51/42 , H01L51/44
CPC分类号： H01L51/0021 , B82Y10/00 , H01L51/0035 , H01L51/0036 , H01L51/0043 , H01L51/0047 , H01L51/4253 , H01L51/441 , Y02E10/549 , Y02P70/521
摘要： A method of producing a film (1) is described. The film may be suitable for use as a plasmon-active electrode in a photovoltaic device. The method comprises forming on a substrate (2) at least one binding layer (3), depositing a metallic layer (4) that binds to the binding layer, and heating the metallic layer so as to produce therein a plurality of apertures (5) each having a diameter of less than 300 nm, wherein the metallic layer after the heating has a sheet resistance of no more than twice the metallic layer before the heating.
摘要翻译：对薄膜（1）的制造方法进行说明。该膜可适用于光伏器件中的等离子体激元电极。该方法包括在基底（2）上形成至少一个结合层（3），沉积与结合层结合的金属层（4），并加热金属层以在其中产生多个孔（5）每个具有小于300nm的直径，其中加热后的金属层在加热之前的金属层的薄层电阻不超过两倍。

4. 发明申请

WO2020079456A1 SELECTIVE DEPOSITION OF METALLIC LAYERS 审中-公开
公开(公告)号：WO2020079456A1
公开(公告)日：2020-04-23
申请号：PCT/GB2019/052994
申请日：2019-10-21
申请人： THE UNIVERSITY OF WARWICK
发明人： VARAGNOLO, Silvia , HATTON, Ross
IPC分类号： C23C14/04 , B05D1/32 , B05D5/08
摘要： A method is described for selectively depositing a metallic layer (to) including one or more of copper, silver and gold. The method includes depositing a fluorinated layer (5) over a surface (1, 4). The fluorinated layer (5) has a thickness sufficient to substantially prevent deposition of the copper, silver and/or gold between the fluorinated layer (5) and the surface (1, 4) during a subsequent evaporation step using a given deposition rate. The method also includes forming the metallic layer (10) by evaporating, at the given deposition rate, the copper, silver and/or gold over the surface (1, 4) and the fluorinated layer (5). The copper, silver and/or gold preferentially adhere to the portions of the surface (1, 4) not covered by the fluorinated layer (5).

5. 发明申请

WO2013179028A2 STABILISING THIN METAL FILMS ON SUBSTRATES 审中-公开
标题翻译：在基板上稳定薄金属膜
公开(公告)号：WO2013179028A2
公开(公告)日：2013-12-05
申请号：PCT/GB2013/051422
申请日：2013-05-29
申请人： THE UNIVERSITY OF WARWICK
发明人： HATTON, Ross , STEC, Helena
IPC分类号： H01L51/00
CPC分类号： H01L51/0021 , H01L31/022491 , H01L51/4253 , H01L51/442 , Y02E10/549
摘要： A method of producing a thin film structure such as a transparent electrode. A transparent thin film of a first metal such as gold or silver is deposited on a substrate. There is then deposited on the thin film of the first metal a compound of a second metal which forms a continuous, transparent thin film of an oxide of the second metal on the film of the first metal. The substrate carrying the thin films is annealed at a temperature of at least about 300 °C. The compound of a second metal that is deposited on the first metal may be a precursor that is treated, for example by heat, so as to produce the oxide of the second metal. The precursor may be an organometallic compound of the second metal; or a hydroxide of the second metal; or a sol of nanoparticles of the oxide of the second metal mixed with an organometallic precursor of the oxide of the second metal. The precursor may be deposited as a liquid. The oxide may be TiO x , WO x , MoO x , VO x , TaO x , ZnO x , NiO x or AIOx..
摘要翻译：制造透明电极等薄膜结构体的方法。第一金属如金或银的透明薄膜沉积在基底上。然后在第一金属的薄膜上沉积第二金属的化合物，该第二金属的化合物在第一金属的膜上形成第二金属的氧化物的连续的透明薄膜。承载薄膜的基板在至少约300℃的温度下退火。沉积在第一金属上的第二金属的化合物可以是例如通过加热处理的前体，以便产生第二金属的氧化物。前体可以是第二金属的有机金属化合物; 或第二金属的氢氧化物; 或第二金属的氧化物的纳米颗粒的溶胶与第二金属的氧化物的有机金属前体混合。前体可以作为液体沉积。氧化物可以是TiOx，WOx，MoOx，VOx，TaOx，ZnOx，NiOx或AIOx。

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