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    • 2. 发明申请
    • METHOD FOR THE MANUFACTURING OF MULTILAYER MESOGENIC COMPONENTS
    • 制造多层构象成分的方法
    • WO2005076384A1
    • 2005-08-18
    • PCT/EP2005/000557
    • 2005-01-18
    • UNIVERSITE LIBRE DE BRUXELLESTANT, JulienGEERTS, YvesKESTEMONT, Gaël
    • TANT, JulienGEERTS, YvesKESTEMONT, Gaël
    • H01L51/30
    • H01L51/0078H01L51/0003H01L51/0036H01L51/0053H01L51/007H01L51/0071H01L51/0076H01L51/0583H01L51/424
    • The present invention discloses a method for the manufacturing of an electronic component comprising the deposition of a multilayer structure of the successive mesogenic material m 1 , m 2 , m j selected from the group consisting of calamitic and/or discotic materials, on a substrate (1), comprising the steps of: dissolving of a mesogenic material m 1 , m 2 ,… m j respectively in the solvents S 1 , S 2 ,… S j ; depositing a first layer of said first mesogenic material m 1 dissolved in S 1 on a substrate (1); depositing a second layer of said second mesogenic material m 2 dissolved in S 2 , on said first layer of mesogenic material m 1 ; depositing finally a supplementary layer of the mesogenic material m j dissolved in S j on a layer of mesogenic material m (j-1) ; wherein the mesogenic material m (i-1) is insoluble in the solvent S i of the following mesogenic material mi in the manufacturing of the successive layers m 1 , m 2 ,… m j to avoid the washing of the layer m (i-1) by the solvent S i . (i = 2 to j).
    • 本发明公开了一种电子部件的制造方法,其特征在于,在基板(1)上沉积选自由绢云母和/或盘状材料组成的组中的连续介晶材料m1,m2,mj的多层结构, 包括以下步骤:将介晶材料m1,m2,... mj分别溶解在溶剂S1,S2,... Sj中; 将溶解在S1中的所述第一介晶材料m1的第一层沉积在衬底(1)上; 将溶解在S2中的所述第二介晶材料m2的第二层沉积在所述第一介晶材料层m1上; 最后沉积溶解在Sj中的介晶材料mj的辅助层在介晶材料层m(j-1)上; 其中在连续层m1,m2,... mj的制造中,介晶材料m(i-1)不溶于下述介晶材料的溶剂Si,以避免层m(i-1)的洗涤, 通过溶剂Si。 (i = 2〜j)。