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1. 发明申请

WO2007109535A2 NON-STREAMING HIGH-EFFICIENCY PERFORATED SEMICONDUCTOR NEUTRON DETECTORS, METHODS OF MAKING SAME AND MEASURING WAND AND DETECTOR MODULES UTILIZING SAME 审中-公开
标题翻译：非流动性高性能半导体中子检测器，其制造方法和测量范围和使用其的检测器模块
公开(公告)号：WO2007109535A2
公开(公告)日：2007-09-27
申请号：PCT/US2007064167
申请日：2007-03-16
申请人： UNIV KANSAS STATE , MCGREGOR DOUGLAS S , SHULTIS JOHN K , RICE BLAKE B , MCNEIL WALTER J , SOLOMON CLELL J , PATTERSON ERIC L , BELLINGER STEVEN L
发明人： MCGREGOR DOUGLAS S , SHULTIS JOHN K , RICE BLAKE B , MCNEIL WALTER J , SOLOMON CLELL J , PATTERSON ERIC L , BELLINGER STEVEN L
IPC分类号： G01T1/08
CPC分类号： G01T3/08
摘要： Non-streaming high-efficiency perforated semiconductor neutron detectors, method of making same and measuring wands and detector modules utilizing same are disclosed. The detectors have improved mechanical structure, flattened angular detector responses, and reduced leakage current. A plurality of such detectors can be assembled into imaging arrays, and can be used for neutron radiography, remote neutron sensing, cold neutron imaging, SNM monitoring, and various other applications.
摘要翻译：公开了非流式高效穿孔半导体中子检测器，其制造方法以及利用其测量棒和检测器模块。检测器具有改进的机械结构，平坦的角度检测器响应和减小的漏电流。多个这样的检测器可以组装成成像阵列，并且可以用于中子射线照相，远程中子感测，冷中子成像，SNM监测和各种其它应用。

2. 发明申请

WO2004040332A3 HIGH-EFFICIENCY NEUTRON DETECTORS AND METHODS OF MAKING SAME 审中-公开
标题翻译：高效中性探测器及其制造方法
公开(公告)号：WO2004040332A3
公开(公告)日：2004-10-07
申请号：PCT/US0334436
申请日：2003-10-29
申请人： UNIV MICHIGAN , MCGREGOR DOUGLAS S , KLANN RAYMOND
发明人： MCGREGOR DOUGLAS S , KLANN RAYMOND
IPC分类号： G01T1/185 , G01T3/00 , G01T3/08
CPC分类号： G01T1/185 , G01T3/00 , G01T3/08
摘要： Neutron detectors, advanced detector process techniques and advanced compound film designs have greatly increased neutron-detection efficiency. One embodiment of the detectors utilizes a semiconductor wafer with a matrix of spaced cavities filled with one or more types of neutron reactive material such as B or LiF. The cavities are etched into both the front and back surfaces of the device such that the cavities from one side surround the cavities from the other side. The cavities may be etched via holes or etched slots or trenches. In another embodiment, the cavities are different-sized and the smaller cavities extend into the wafer from the lower surfaces of the larger cavities. In a third embodiment, multiple layers of different neutron-responsive material are formed on one or more sides of the wafer. The new devices operate at room temperature, are compact, rugged, and reliable in design.
摘要翻译：中子检测器，先进的检测器工艺技术和先进的复合膜设计大大提高了中子检测效率。检测器的一个实施例利用具有填充有一种或多种类型的中子反应性材料如10 B或6 LiF的间隔空隙矩阵的半导体晶片。空腔被蚀刻到装置的前表面和后表面中，使得来自一侧的空腔从另一侧围绕空腔。可以通过孔或蚀刻的槽或沟槽蚀刻空腔。在另一个实施例中，空腔是不同尺寸的，并且较小的空腔从较大空腔的下表面延伸到晶片中。在第三实施例中，在晶片的一侧或多侧上形成多层不同的中子响应材料。新设备在室温下工作，结构紧凑，坚固耐用，设计可靠。

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