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1. 发明申请

WO2010051537A1 OPTOELECTRONIC DEVICE BASED ON NON-POLAR AND SEMI-POLAR ALUMINUM INDIUM NITRIDE AND ALUMINUM INDIUM GALLIUM NITRIDE ALLOYS 审中-公开
标题翻译：基于非极性和半极性铝氮化铟和氮化铝氮化镓合金的光电器件
公开(公告)号：WO2010051537A1
公开(公告)日：2010-05-06
申请号：PCT/US2009/062982
申请日：2009-11-02
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA , CHUNG, Roy, B. , CHEN, Zhen , SPECK, James, S. , DENBAARS, Steven, P. , NAKAMURA, Shuji
发明人： CHUNG, Roy, B. , CHEN, Zhen , SPECK, James, S. , DENBAARS, Steven, P. , NAKAMURA, Shuji
IPC分类号： H01L27/15
CPC分类号： H01L33/30 , B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/2009 , H01S5/3201 , H01S5/3211 , H01S5/34333
摘要： A high-power and high-efficiency light emitting device with emission wavelength (λ peak ) ranging from 280 nm to 360 nm is fabricated. The new device structure uses non-polar or semi-polar AlInN and AlInGaN alloys grown on a non-polar or semi-polar bulk GaN substrate.
摘要翻译：制造了发射波长（λ峰）范围从280nm到360nm的大功率和高效率发光器件。新器件结构使用在非极性或半极性体积GaN衬底上生长的非极性或半极性AlInN和AlInGaN合金。

2. 发明申请

WO2010051536A1 METHOD OF FABRICATING SEMI-INSULATING GALLIUM NITRIDE USING AN ALUMINUM GALLIUM NITRIDE BLOCKING LAYER 审中-公开
标题翻译：使用氮化铝阻挡层制备半绝缘氮化铝的方法
公开(公告)号：WO2010051536A1
公开(公告)日：2010-05-06
申请号：PCT/US2009/062977
申请日：2009-11-02
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA , CHEN, Zhen , MISHRA, Umesh, K. , DENBAARS, Steven, P. , NAKAMURA, Shuji
发明人： CHEN, Zhen , MISHRA, Umesh, K. , DENBAARS, Steven, P. , NAKAMURA, Shuji
IPC分类号： H01L21/469
CPC分类号： C30B29/406 , C30B25/183 , C30B29/36 , C30B29/403
摘要： A method for fabricating a single crystal, high quality, semi-insulating (SI) gallium nitride (GaN) layer using an Al x Gai -x N blocking layer. A buffer layer is grown on a substrate, the Al x Gai -x N blocking layer is grown on the buffer layer, and a single crystal, high quality, SI-GaN layer is grown on the Al x Gai -x N blocking layer. The Al x Gai -x N blocking layer acts as a diffusion blocking layer that prevents the diffusion of donors from the substrate from reaching the SI-GaN layer. The resulting SI-GaN layer reduces parasitic current flow and parasitic capacitive effects in electronic devices.
摘要翻译：使用Al x Ga 1-x N阻挡层制造单晶，高质量，半绝缘（SI）氮化镓（GaN）层的方法。在衬底上生长缓冲层，将Al x Ga 1-x N阻挡层生长在缓冲层上，并且在Al x Ga 1-x N阻挡层上生长单晶，高质量的SI-GaN层。 Al x Ga x-x N阻挡层用作扩散阻挡层，其防止供体从衬底扩散到达SI-GaN层。所产生的SI-GaN层减少了电子器件中的寄生电流和寄生电容效应。

3. 发明申请

WO2011106301A1 FUEL PROCESSING SYSTEMS WITH THERMALLY INTEGRATED COMPONENTRY 审中-公开
标题翻译：具有热集成组分的燃料加工系统
公开(公告)号：WO2011106301A1
公开(公告)日：2011-09-01
申请号：PCT/US2011/025653
申请日：2011-02-22
申请人： IDATECH, LLC , CHEN, Zhen , KARIM KAMEL IBRAHIM, John , OUYANG, Xun , RENN, Curtiss , STURKO, Ryan, Thomas
发明人： CHEN, Zhen , KARIM KAMEL IBRAHIM, John , OUYANG, Xun , RENN, Curtiss , STURKO, Ryan, Thomas
IPC分类号： H01M8/06
CPC分类号： H01M6/44 , C01B3/32 , C01B3/38 , C01B2203/0811 , H01M8/04022 , H01M8/0618 , H01M8/0631 , H01M16/003 , Y02E60/50 , Y02P90/40
摘要： Hydrogen-producing assemblies, fuel cell systems including the same, methods of producing hydrogen gas, and methods of powering an energy-consuming device. Hydrogen- producing assemblies may include a monolithic body that defines at least a reforming conduit, and in some embodiments a plurality of reforming conduits, in which a feed stream is catalyzed into a reformate gas stream containing hydrogen gas, and a burner conduit, in which a fuel-air stream is combusted. The monolithic body is constructed to conduct heat generated by the exothermic reaction of the combustion from the burner conduit to the reformer conduit. In some hydrogen-producing assemblies, the monolithic body further defines a vaporizing conduit, in which liquid portions of the feed stream are vaporized prior to being delivered to the reformer conduit, and the monolithic body may be constructed to conduct heat from the burner conduit to the vaporizing conduit.
摘要翻译：制氢组件，包括其的燃料电池系统，生产氢气的方法，以及为消耗能量装置供电的方法。制氢组件可以包括至少限定重整导管的整体式主体，并且在一些实施例中是多个重整导管，其中进料流被催化成含有氢气的重整产物气流，以及燃烧器导管，其中燃料 - 空气流燃烧。整体式结构被构造成将由燃烧器的燃烧的放热反应产生的热量传导到重整器导管。在一些氢产生组件中，整体式体还进一步限定了蒸发导管，其中进料流的液体部分在被输送到重整器导管之前蒸发，并且整体式主体可被构造成将热量从燃烧器导管传导到蒸发管道。

4. 发明申请

WO2013019318A1 LED HAVING A LOW DEFECT N-TYPE LAYER THAT HAS GROWN ON A SILICON SUBSTRATE 审中-公开
标题翻译： LED具有在硅衬底上形成的低缺陷N型层
公开(公告)号：WO2013019318A1
公开(公告)日：2013-02-07
申请号：PCT/US2012/041780
申请日：2012-06-09
申请人： BRIDGELUX, INC. , CHEN, Zhen
发明人： CHEN, Zhen
IPC分类号： H01L33/04 , H01L33/12 , H01L33/22
CPC分类号： H01L33/007 , H01L24/73 , H01L33/0079 , H01L33/12 , H01L33/62 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/01322 , H01L2924/10253 , H01L2924/00012 , H01L2924/00 , H01L2924/00014
摘要： A vertical GaN-based blue LED has an n-type GaN layer that was grown directly on Low Resistance Layer (LRL) that in turn was grown over a silicon substrate. In one example, the LRL is a low sheet resistance GaN/AlGaN superlattice having periods that are less than 300nm thick. Growing the n-type GaN layer on the superlattice reduces lattice defect density in the n-type layer. After the epitaxial layers of the LED are formed, a conductive carrier is wafer bonded to the structure. The silicon substrate is then removed. Electrodes are added and the structure is singulated to form finished LED devices. In some examples, some or all of the LRL remains in the completed LED device such that the LRL also serves a current spreading function. In other examples, the LRL is entirely removed so that no portion of the LRL is present in the completed LED device.
摘要翻译：垂直的GaN基蓝色LED具有直接在低电阻层（LRL）上生长的n型GaN层，其又在硅衬底上生长。在一个示例中，LRL是具有小于300nm厚的周期的低薄层电阻GaN / AlGaN超晶格。在超晶格上生长n型GaN层减少n型层中的晶格缺陷密度。在形成LED的外延层之后，将导电载体晶片结合到该结构上。然后去除硅衬底。添加电极，并将结构单片化以形成成品的LED器件。在一些示例中，LRL中的一些或全部保持在完成的LED器件中，使得LRL还用于电流扩展功能。在其他示例中，LRL被完全去除，使得在完成的LED装置中不存在LRL的任何部分。

5. 发明申请

WO2013019310A2 LED ON SILICON SUBSTRATE USING ZINC-SULFIDE AS BUFFER LAYER 审中-公开
标题翻译：使用锌 - 硫化物作为缓冲层的硅衬底上的LED
公开(公告)号：WO2013019310A2
公开(公告)日：2013-02-07
申请号：PCT/US2012/041123
申请日：2012-06-06
申请人： BRIDGELUX, INC. , CHEN, Zhen
发明人： CHEN, Zhen
IPC分类号： H01L33/12
CPC分类号： H01L33/007 , H01L24/32 , H01L33/0079 , H01L33/10 , H01L33/12 , H01L33/22 , H01L33/62 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/01012 , H01L2924/01029 , H01L2924/01322 , H01L2924/10253 , H01L2924/12041 , H01L2924/12042 , H01L2924/00012 , H01L2924/00 , H01L2924/3512 , H01L2924/00014
摘要： A vertical GaN-based blue LED has an n-type GaN layer that was grown over a ZnS layer that in turn was grown directly on a silicon substrate. In one example, the ZnS layer is a transitional buffer layer that is 50nm thick, and the n-type GaN layer is at least 2000nm thick. Growing the n-type GaN layer on the ZnS buffer layer reduces lattice defect density in the n-type layer. The ZnS buffer layer provides a good lattice constant match with the silicon substrate and provides a compound polar template for subsequent GaN growth. After the epitaxial layers of the LED are formed, a conductive carrier is wafer bonded to the structure. The silicon substrate and the ZnS buffer layer are then removed. Electrodes are added and the structure is singulated to form finished LED devices.
摘要翻译：垂直GaN基蓝光LED具有生长在ZnS层上的n型GaN层，所述ZnS层又直接生长在硅衬底上。在一个示例中，ZnS层是50nm厚的过渡缓冲层，并且n型GaN层至少2000nm厚。在ZnS缓冲层上生长n型GaN层减少了n型层中的晶格缺陷密度。 ZnS缓冲层提供与硅衬底匹配的良好晶格常数，并为随后的GaN生长提供化合物极性模板。在形成LED的外延层之后，将导电载体晶片结合到该结构。然后去除硅衬底和ZnS缓冲层。电极被添加并且结构被分割以形成完成的LED器件。

6. 发明申请

WO2005061092A1 REACTOR AND PROCESS FOR CONVERTING ALKANES TO ALKENES 审中-公开
标题翻译：将碱转化成碱的反应器和方法
公开(公告)号：WO2005061092A1
公开(公告)日：2005-07-07
申请号：PCT/US2004/037227
申请日：2004-11-05
申请人： CONOCOPHILLIPS COMPANY , RAPIER, Charles, R. , HOLDERMAN, Daniel, P. , CHEN, Zhen , CHEN, Shang, Y. , MCDONALD, Steven R. , BUDIN, Lisa, M. , RAMANI, Sriram , ALLISON, Joe, D.
发明人： RAPIER, Charles, R. , HOLDERMAN, Daniel, P. , CHEN, Zhen , CHEN, Shang, Y. , MCDONALD, Steven R. , BUDIN, Lisa, M. , RAMANI, Sriram , ALLISON, Joe, D.
IPC分类号： B01J10/00
CPC分类号： C07C5/48 , C07C2521/04 , C07C2523/42 , C07C2523/89 , C07C11/02
摘要： The invention relates to a reactor comprising two reaction zones and processes for the production of alkenes from alkanes. A first reaction zone includes a combustion catalyst, and a second reaction zone comprises a heating zone in thermal contact with the first reaction zone. One process comprises generating heat and an effluent by the combustion of a fuel with oxygen in the first reaction zone; passing an alkane feed through the heating zone of the second reaction zone such that the alkane feed absorbs a sufficient amount of the heat generated in the first reaction zone to initiate the conversion of alkanes to alkenes in the second reaction zone. In other embodiments, the effluent comprises oxygen, and the second reaction zone excludes a catalyst; alternatively, the effluent is substantially free of oxygen, and the second reaction zone comprises a supplemental oxygen feed and may or may not include a catalyst.
摘要翻译：本发明涉及一种包含两个反应区的反应器和用于从烷烃生产烯烃的方法。第一反应区包括燃烧催化剂，第二反应区包括与第一反应区热接触的加热区。一种方法包括通过在第一反应区中燃烧具有氧气的燃料产生热量和流出物; 使烷烃进料通过第二反应区的加热区，使得烷烃进料吸收足够量的在第一反应区中产生的热量以引发烷烃转化为第二反应区中的烯烃。在其它实施方案中，流出物包含氧，第二反应区排除催化剂; 或者，流出物基本上不含氧，并且第二反应区包含补充的氧气进料，并且可以包括也可以不包括催化剂。

7. 发明申请

WO2019191690A1 APPARATUSES AND METHODS INVOLVING THERMALLY TUNED COMPOSITE MATERIAL 审中-公开
公开(公告)号：WO2019191690A1
公开(公告)日：2019-10-03
申请号：PCT/US2019/025005
申请日：2019-03-29
申请人： THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY , LI, Wei , SHI, Yu , FAN, Shanhui , CHEN, Zhen
发明人： LI, Wei , SHI, Yu , FAN, Shanhui , CHEN, Zhen
IPC分类号： F28F13/18 , B32B7/023 , B32B7/027 , G02B5/28
摘要： An apparatus includes a substrate, at least one type of tuning material, and a composite material. The substrate has an interface surface or material that manifests, in response to light in a color spectrum, a particular color and a first thermal load. The particular color is associated with the first thermal load. The at least one type of tuning material manifests, in response to light in the color spectrum, the particular color and a second thermal load. The particular color is associated with the second thermal load. The first thermal load is different from the second thermal load. The composite material includes the interface surface or material and the at least one type of tuning material. The composite material manifests, in response to light in the color spectrum, the particular color and a tuned thermal load which is different than the first thermal load and the second thermal load.

8. 发明申请

WO2013036416A1 BUFFER LAYER FOR GAN-ON-SI LED 审中-公开
标题翻译： GAN-ON-SI LED缓冲层
公开(公告)号：WO2013036416A1
公开(公告)日：2013-03-14
申请号：PCT/US2012/052821
申请日：2012-08-29
申请人： BRIDGELUX, INC. , CHEN, Zhen
发明人： CHEN, Zhen
IPC分类号： H01L33/12 , H01L33/32
CPC分类号： H01L21/0254 , H01L21/02381 , H01L21/0248 , H01L21/02488 , H01L33/007 , H01L33/0079 , H01L33/12 , H01L2224/2929 , H01L2224/29339 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： A buffer layer of zinc telluride (ZnTe) or titanium dioxide (TiO 2 ) is formed directly on a silicon substrate. Optionally, a layer of A1N is then formed as a second layer of the buffer layer. A template layer of GaN is then formed over the buffer layer. An epitaxial LED structure for a GaN-based blue LED is formed over the template layer, thereby forming a first multilayer structure. A conductive carrier is then bonded to the first multilayer structure. The silicon substrate and the buffer layer are then removed, thereby forming a second multilayer structure. Electrodes are formed on the second multilayer structure, and the structure is singulated to form blue LED devices.
摘要翻译：在硅衬底上直接形成碲化锌（ZnTe）或二氧化钛（TiO2）的缓冲层。可选地，然后形成A1N层作为缓冲层的第二层。然后在缓冲层上形成GaN的模板层。在模板层上形成用于GaN基蓝色LED的外延LED结构，从而形成第一多层结构。然后将导电载体接合到第一多层结构。然后去除硅衬底和缓冲层，从而形成第二多层结构。电极形成在第二多层结构上，并且结构被单个化以形成蓝色LED器件。

9. 发明申请

WO2013019302A2 N-TYPE GALLIUM-NITRIDE LAYER HAVING MULTIPLE CONDUCTIVE INTERVENING LAYERS 审中-公开
标题翻译：具有多个导电干燥层的N型玻璃 - 氮化物层
公开(公告)号：WO2013019302A2
公开(公告)日：2013-02-07
申请号：PCT/US2012/039545
申请日：2012-05-25
申请人： BRIDGELUX, INC. , CHEN, Zhen , FU, Yi
发明人： CHEN, Zhen , FU, Yi
IPC分类号： H01L33/32 , H01L33/12
CPC分类号： H01L33/12 , H01L33/007 , H01L33/0079 , H01L33/32 , H01L33/62 , H01L2224/2929 , H01L2224/29339 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/01322 , H01L2924/10253 , H01L2924/0655 , H01L2924/00 , H01L2924/00014
摘要： A vertical GaN-based blue LED has an n-type layer comprising multiple conductive intervening layers. The n- type layer contains a plurality of periods. Each period of the n-type layer includes a gallium-nitride (GaN) sublayer and a thin conductive aluminum-gallium-nitride (AlGaN:Si) intervening sublayer. In one example, each GaN sublayer has a thickness substantially more than lOOnm and less than lOOOnm, and each AlGaN:Si intervening sublayer has a thickness less than 25nm. The entire n-type layer is at least 2000nm thick. The AlGaN:Si intervening layer provides compressive strain to the GaN sublayer thereby preventing cracking. After the epitaxial layers of the LED are formed, a conductive carrier is wafer bonded to the structure. The silicon substrate is then removed. Electrodes are added and the structure is singulated to form a finished LED device. Because the AlGaN:Si sublayers are conductive, the entire n-type layer can remain as part of the finished LED device.
摘要翻译：垂直的GaN基蓝色LED具有包括多个导电中间层的n型层。 n型层包含多个周期。 n型层的每个周期包括氮化镓（GaN）子层和薄导电铝 - 氮化镓（AlGaN：Si）介入子层。在一个示例中，每个GaN子层的厚度基本上大于100nm且小于1000nm，并且每个AlGaN：Si中间层具有小于25nm的厚度。整个n型层的厚度至少为2000nm。 AlGaN：Si中间层为GaN子层提供压缩应变，从而防止开裂。在形成LED的外延层之后，将导电载体晶片结合到该结构上。然后去除硅衬底。添加电极，并且将结构单个化以形成成品的LED器件。因为AlGaN：Si子层是导电的，所以整个n型层可以保留为最终的LED器件的一部分。

10. 发明申请

WO2013016989A1 TEST STIMULI COMPRESSION AND TEST RESPONSE COMPACTION IN LOW-POWER SCAN TESTING 审中-公开
标题翻译：低功耗扫描测试中的测试刺激压缩和测试响应压缩
公开(公告)号：WO2013016989A1
公开(公告)日：2013-02-07
申请号：PCT/CN2012/077512
申请日：2012-06-26
申请人： TSINGHUA UNIVERSITY , XIANG, Dong , CHEN, Zhen
发明人： XIANG, Dong , CHEN, Zhen
IPC分类号： G01R31/319
CPC分类号： G01R31/318547
摘要： It is essential to propose a new scan testing scheme that efficiently compresses stimulus data and compacts test responses, provides low-power feature, and reduces test application cost significantly. A new test response compaction scheme called selective test response collection is proposed to reduce test response data, which is combined with a structure-analysis-based test response compactor by using a new coordination measure. The scan architecture is also established considering the coordination relationship between scan flip-flops. A new low-power test application scheme is proposed, which is able to compress test data very well and the test application time remains at the level of multiple scan chain designs. A combination of a scan architecture and an existent test compression scheme can greatly compress test data.
摘要翻译：必须提出一种新的扫描测试方案，可有效地压缩刺激数据并压缩测试响应，提供低功耗特性，并显着降低测试应用成本。提出了一种称为选择性测试响应集合的新的测试响应压缩方案，以减少测试响应数据，通过使用新的协调度量结合基于结构分析的测试响应压缩器。考虑到扫描触发器之间的协调关系，扫描架构也被建立。提出了一种新的低功耗测试应用方案，能够很好地压缩测试数据，测试应用时间保持在多个扫描链设计的水平。扫描架构和现有测试压缩方案的组合可以大大压缩测试数据。

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