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    • 2. 发明申请
    • SHADOW EDGE LITHOGRAPHY FOR NANOSCALE PATTERNING AND MANUFACTURING
    • 用于纳米图案和制造的阴影边缘平版印刷
    • WO2009029302A2
    • 2009-03-05
    • PCT/US2008/063113
    • 2008-05-08
    • UNIVERSITY OF WASHINGTONCHUNG, Jae-HyunBAI, John GuofengYEO, Woon-Hong
    • CHUNG, Jae-HyunBAI, John GuofengYEO, Woon-Hong
    • B82Y10/00B82Y40/00H01L21/0337H01L29/0665H01L29/0673Y10T428/24372
    • An advanced high-resolution and high-throughput shadow edge (116) lithography (SEL) method is disclosed for forming uniform zero- one- and two-dimensional nanostructures on a substrate. The method entails high-vacuum oblique vapor deposition and a compensated shadow effect of a pre-patterned layer (100). A method of compensating for cross-substrate variation is also disclosed. The compensation approach enables routine, low-cost fabrication of uniform nanoscale features, or nanogaps (110) on the order of 10 nm ± 1 nm, that can be used to etch nanowells (196) or to form nanostructures such as nanowires (169), using a selective metal lift-off process. A wafer-scale analytical model is proposed for predicting the width of nanogaps (110) fabricated by the shadow effect on pre-patterned edges. By combining compensation and pattern reversal techniques with multiple shadow patterning, two-dimensional structures such as crossing nanowires may be generated. A technique is disclosed for smoothing edge roughness of the nanostructures.
    • 公开了先进的高分辨率和高通量阴影边缘(116)光刻(SEL)方法用于在衬底上形成均匀的零一维和二维纳米结构。 该方法需要高真空倾斜气相沉积和预制图层(100)的补偿阴影效应。 还公开了补偿交叉衬底变化的方法。 这种补偿方法可实现均匀的纳米尺度特征或纳米间隙(110)的常规,低成本制造,量级为10nm左右; 1纳米,这可以用于使用选择性金属剥离工艺来蚀刻纳米孔(196)或形成纳米结构(例如纳米线(169))。 提出了一种晶片级分析模型,用于预测由预先图案化边缘上的阴影效应制造的纳米间隙(110)的宽度。 通过将补偿和图案反转技术与多重阴影图案结合,可以生成诸如交叉纳米线的二维结构。 公开了一种用于平滑纳米结构的边缘粗糙度的技术。