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    • 1. 发明申请
    • PASSIVE MICROELECTRONIC COMPONENTS, CAPABLE OF ALLOWING A RADIO-FREQUENCY OR HYPER-FREQUENCY SIGNAL TO TRAVEL IN A SINGLE DIRECTION
    • 被动微电子组件,可以允许射频或超频信号以单向传输
    • WO2014016285A3
    • 2014-04-10
    • PCT/EP2013065495
    • 2013-07-23
    • THALES SA
    • ZIAEI AFSHINLE BAILLIF MATTHIEUBANSROPUN SHAILENDRAMARTINS PAOLO
    • H01P1/387H01G4/33H01H1/00H01L51/00H01P3/00H01P3/08
    • H01P1/38H01G4/018H01G4/33H01H1/0036H01H2300/036H01P1/387H01P3/003H01P3/082
    • The invention concerns passive radio-frequency microelectronic components for integrated circuits, comprising a dielectric substrate (S) and at least one metal conductive layer disposed on said substrate, said conductive layer comprising at least a first metal conductive part (C1) and a second metal conductive part (C2) separated by insulation (I). A microelectronic component according to the invention comprises at least one graphene layer (G) disposed so that a radio-frequency or hyper-frequency signal passes through said at least one graphene layer (G) when it is transmitted between said first metal conductive part and said second metal conductive part, said graphene layer (G) being capable, when it is subjected to an electrical potential, of transmitting said radio-frequency or hyper-frequency signal in a first direction, and of attenuating said radio-frequency or hyper-frequency signal in a second direction opposite said first direction. The invention applies in particular to transmission-line, capacitor and microswitch microelectronic components.
    • 本发明涉及用于集成电路的无源射频微电子部件,包括电介质衬底(S)和设置在所述衬底上的至少一个金属导电层,所述导电层至少包括第一金属导电部件(C1)和第二金属 导电部分(C2)通过绝缘(I)分开。 根据本发明的微电子部件包括至少一个石墨烯层(G),所述至少一个石墨烯层(G)被布置成使得射频或超高频信号在所述第一金属导电部分和第二金属导电部分之间传输时穿过所​​述至少一个石墨烯层(G) 所述第二金属导电部分,当所述石墨烯层(G)受到电势时,所述石墨烯层(G)能够在第一方向上发射所述射频或超高频信号,并且衰减所述射频或超高频信号, 在与所述第一方向相反的第二方向上输出高频信号。 本发明特别适用于传输线,电容器和微动开关微电子元件。