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    • 3. 发明申请
    • GATE CAPACITANCE CONTROL IN A LOAD SWITCH
    • 负荷开关中的门电容控制
    • WO2017147214A1
    • 2017-08-31
    • PCT/US2017/018990
    • 2017-02-22
    • TEXAS INSTRUMENTS INCORPORATEDTEXAS INSTRUMENTS JAPAN LIMITED
    • BECK, SunghoKLARENBEEK, Johnny
    • H03L5/00H01L29/68
    • H03K17/08104H02M3/07
    • In described examples of a switch (200) for controlling a power supply, the switch (200) includes a first transistor (Ml) having a drain and a source connected between V IN and V OUT and a gate connected to be driven to a first voltage that is greater than VIN, an external capacitor (C EXT ) operable, when connected to the gate of the first transistor (Ml), to control a rise time of V OUT , and a circuit coupled to the gate of the first transistor (Ml) and to the external capacitor (C EXT ). The circuit is connected to couple the external capacitor (C EXT ) to the gate of the first transistor (Ml) responsive to an enable signal (EN) turning on and to uncouple the external capacitor (C EXT ) from the gate of the first transistor (Ml) responsive to the voltage on the gate reaching the first voltage.
    • 在用于控制电源的开关(200)的所描述的示例中,开关(200)包括具有连接在V IN之间的漏极和源极的第一晶体管(M1) 并且栅极被连接以被驱动到大于VIN的第一电压时,外部电容器(C EXT)能够在连接到栅极时被操作, 以控制V OUT的上升时间,以及耦合到第一晶体管(M1)的栅极和外部电容器(C EXT)的电路, /子>)。 该电路被连接以响应于使能信号(EN)导通而将外部电容器(C EXT)耦合到第一晶体管(M1)的栅极并且将外部电容器(C EXT )。